公开(公告)号：US08987739B2

公开(公告)日：2015-03-24

申请号：US13424382

申请日：2012-03-20

申请人： Chen-Yuan Tu ,  Yih-Chyun Kao ,  Shu-Feng Wu ,  Chun-Nan Lin

发明人： Chen-Yuan Tu ,  Yih-Chyun Kao ,  Shu-Feng Wu ,  Chun-Nan Lin

IPC分类号： H01L31/00 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L29/43 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/786 ,  H01L29/7869

摘要： A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a gate, a channel layer, a gate insulation layer, a source, a drain and a silicon-aluminum-oxide layer. The gate is disposed on a substrate. The channel layer is disposed on the substrate. The channel layer overlaps the gate. The gate insulation layer is disposed between the gate and the channel layer. The source and the drain are disposed on two sides of the channel layer. The silicon-aluminum-oxide layer is disposed on the substrate and covers the source, the drain and the channel layer.

摘要翻译： 提供了一种半导体器件及其制造方法。 半导体器件包括栅极，沟道层，栅极绝缘层，源极，漏极和硅 - 氧化铝层。 栅极设置在基板上。 通道层设置在基板上。 沟道层与栅极重叠。 栅极绝缘层设置在栅极和沟道层之间。 源极和漏极设置在沟道层的两侧。 硅 - 氧化铝层设置在基板上并覆盖源极，漏极和沟道层。

公开(公告)号：US06926014B2

公开(公告)日：2005-08-09

申请号：US10444571

申请日：2003-05-22

申请人： Chao-Yun Cheng ,  Shin-Jien Kuo ,  Chih-Chung Chuang ,  Shu-Feng Wu

发明人： Chao-Yun Cheng ,  Shin-Jien Kuo ,  Chih-Chung Chuang ,  Shu-Feng Wu

IPC分类号： B08B7/00 ,  B08B9/093 ,  C25F1/00

CPC分类号： H01J37/32862 ,  B08B7/0035 ,  Y10S134/902 ,  Y10S438/905

摘要： A method for cleaning a plasma chamber after metal etching. First, a substrate having a metal layer thereon is placed in a plasma chamber. Next, the metal layer is etched. Finally, the substrate is removed from the plasma chamber to perform a dry cleaning which includes the following steps. First, the inner wall of the plasma chamber is cleaned by plasma etching using oxygen as a process gas. Next, the top and bottom electrode plates in the plasma chamber are cleaned by plasma etching using chlorine and boron chloride as process gases. Next, the inner wall of the plasma chamber is cleaned again by plasma etching using sulfur hexafluoride and oxygen as process gases. Finally, oxygen and helium used as purging gases are injected into the plasma chamber and exhausted from therein.

摘要翻译： 金属蚀刻后的等离子体室的清洗方法。 首先，将其上具有金属层的基板放置在等离子体室中。 接下来，蚀刻金属层。 最后，将基板从等离子体室中取出以进行干洗，其中包括以下步骤。 首先，通过使用氧作为处理气体的等离子体蚀刻来清洁等离子体室的内壁。 接下来，通过使用氯和氯化硼作为工艺气体的等离子体蚀刻来清洁等离子体室中的顶部和底部电极板。 接下来，通过使用六氟化硫的等离子体蚀刻和氧作为工艺气体再次清洁等离子体室的内壁。 最后，用作净化气体的氧气和氦气被注入到等离子体室中并从其中排出。

公开(公告)号：US07922921B2

公开(公告)日：2011-04-12

申请号：US10708642

申请日：2004-03-17

申请人： Chih-Chung Chuang ,  Shin-Jien Kuo ,  Chao-Yun Cheng ,  Shu-Feng Wu

发明人： Chih-Chung Chuang ,  Shin-Jien Kuo ,  Chao-Yun Cheng ,  Shu-Feng Wu

IPC分类号： H01L21/302

CPC分类号： H01L27/124 ,  C23F4/00 ,  G02F2001/136295 ,  H01L21/32136 ,  H01L29/4908

摘要： The present invention includes the steps of providing a substrate having a main surface; depositing a dual-metal layer such as Mo/AlNd, MoW/AlNd, MoW/Al onto the main surface of the substrate; defining gate and word line patter using a layer of photoresist; and using the photoresist as an etching mask, a first metal dry etching process is carried out to etch the dual-metal layer at an etching selectivity that is significantly higher than prior art. The first metal dry etching process uses oxygen/fluorine containing etching gas mixture and oxygen/chlorine containing etching gas mixture to form the dual-metal gate and word line pattern having slightly oblique sidewalls. End point detection mode detected at 704 nm is used in the first metal dry etching process.

摘要翻译： 本发明包括提供具有主表面的基板的步骤; 在衬底的主表面上沉积诸如Mo / AlNd，MoW / AlNd，MoW / Al的双金属层; 使用一层光刻胶定义栅极和字线图案; 并且使用光致抗蚀剂作为蚀刻掩模，执行第一金属干蚀刻工艺以以比现有技术显着更高的蚀刻选择性蚀刻双金属层。 第一种金属干法蚀刻工艺使用含氧/含氟蚀刻气体混合物和含氧/氯的蚀刻气体混合物以形成具有稍微倾斜的侧壁的双金属栅极和字线图案。 在第一金属干蚀刻工艺中使用在704nm处检测到的终点检测模式。