Laser and photonic chip integration

    公开(公告)号:US11226457B2

    公开(公告)日:2022-01-18

    申请号:US16885433

    申请日:2020-05-28

    Abstract: Embodiments herein describe optical assemblies that use a spacer element to attach and align a laser to a waveguide in a photonic chip. Once aligned, the laser can transfer optical signals into the photonic chip which can then perform an optical function such as modulation, filtering, amplification, and the like. In one embodiment, the spacer element is a separate part (e.g., a glass or semiconductor block) that is attached between the photonic chip and a submount on which the laser is mounted. The spacer establishes a separation distance between the photonic chip and the submount which in turn aligns the laser with the waveguide in the photonic chip. In another embodiment, rather than the spacer element being a separate part, the spacer element may be integrated into the submount.

    Coupling multi-channel laser to multicore fiber

    公开(公告)号:US11199668B1

    公开(公告)日:2021-12-14

    申请号:US16940528

    申请日:2020-07-28

    Abstract: Aspects described herein include a method comprising arranging a laser die on a substrate. The laser die has multiple channels that are arranged with a first planar arrangement proximate to a facet of the laser die. The method further comprises aligning a single lens to the facet, and aligning a multicore optical fiber to the laser die through the single lens. The multicore optical fiber has a plurality of optical cores that are arranged with a second planar arrangement. Aligning the multicore optical fiber to the laser die comprises rotationally aligning the multicore optical fiber to align the second planar arrangement with the first planar arrangement.

    Package self-heating using multi-channel laser

    公开(公告)号:US11978999B2

    公开(公告)日:2024-05-07

    申请号:US18158879

    申请日:2023-01-24

    CPC classification number: H01S5/02453 H01S3/06704 H01S5/02469 B23K2101/14

    Abstract: Aspects described herein include a method of fabricating an optical component, the optical component, and a method of operating the optical component. A method includes electrically coupling a first laser channel and a second laser channel of a laser die to different electrical leads and testing (i) a first optical coupling of the first laser channel and a second optical coupling of the second laser channel or (ii) a first spectral performance of the first laser channel and a second spectral performance of the second laser channel. The method also includes optically aligning an optical fiber with the first laser channel and designating the second laser channel as a heater element for the first laser channel based at least in part on (i) the first optical coupling being greater than the second optical coupling or (ii) the first spectral performance relative to the second spectral performance.

    COUPLING MULTIPLE OPTICAL CHANNELS USING A Z-BLOCK

    公开(公告)号:US20220120974A1

    公开(公告)日:2022-04-21

    申请号:US17074539

    申请日:2020-10-19

    Abstract: Aspects described herein include an optical apparatus comprising a plurality of light-carrying media, a wavelength division multiplexing (WDM) device optically coupled with the plurality of light-carrying media, and a lens arranged between the WDM device and a multicore optical fiber. An arrangement of the plurality of light carrying media and the WDM device are selected to align each of the plurality of light-carrying media with a respective optical core of the multicore optical fiber.

    III-V laser platforms on silicon with through silicon vias by wafer scale bonding

    公开(公告)号:US11081856B2

    公开(公告)日:2021-08-03

    申请号:US16234105

    申请日:2018-12-27

    Abstract: A laser integrated photonic platform to allow for independent fabrication and development of laser systems in silicon photonics. The photonic platform includes a silicon substrate with an upper surface, one or more through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate. The photonic platform includes a silicon substrate wafer with through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate for mating the photonic platform to a photonics integrated circuit. The photonic platform also includes a III-V semiconductor material structure wafer, where the III-V wafer is bonded to the upper surface of the silicon substrate and includes at least one active layer forming a light source for the photonic platform.

    Thermal isolation element
    19.
    发明授权

    公开(公告)号:US11042049B2

    公开(公告)日:2021-06-22

    申请号:US16597682

    申请日:2019-10-09

    Abstract: Thermal isolation elements are provided in wafer-bonded silicon photonics that include a photonic platform, including a heating element and an optical waveguide that are disposed between a first surface and a second surface (opposite to the first surface) of the photonic platform; a substrate, including a third surface and a fourth surface (opposite to the third surface); wherein the first surface of the photonic platform is bonded to the third surface of the substrate; and wherein a cavity is defined by a trench in one or more of: the first surface and extending towards, but not reaching, the second surface, and the third surface and extending towards, but not reaching, the fourth surface; wherein the cavity is filled with a gas of a known composition at a predefined pressure; and wherein the cavity is aligned with the optical waveguide and the heating element.

    III-V component with multi-layer silicon photonics waveguide platform

    公开(公告)号:US10782475B2

    公开(公告)日:2020-09-22

    申请号:US16433846

    申请日:2019-06-06

    Abstract: Embodiments provide for a photonic platform, comprising: a silicon component; a III-V component; and a bonding layer contacting the silicon component on one side and the III-V component on the opposite side; wherein the silicon component comprises: a silicon substrate; a dielectric, contacting the silicon substrate on one face and the bonding layer on the opposite face; a silicon cores disposed in the dielectric; and wherein the III-V component comprises: a III-V cladding; a III-V contact, having a first side that contacts the bonding layer; and an active region, disposed on the III-V contact and separating the III-V contact from the III-V cladding, wherein the active region is located relative to the silicon cores to define an optical path that includes the active region and the silicon cores.

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