Packaging with substrate and printed circuit board cutouts

    公开(公告)号:US11353668B2

    公开(公告)日:2022-06-07

    申请号:US17070763

    申请日:2020-10-14

    Abstract: An integrated circuit (IC) package having multiple ICs is provided. The IC package includes a printed circuit board (PCB) having a cutout region and a substrate disposed above the PCB. The substrate includes a first cavity on a first surface of the substrate. The IC package also includes a first IC disposed on a second surface of the substrate and in the cutout region of the PCB, The IC package further includes a second IC disposed above the substrate, and a first device disposed on the second IC and in the first cavity on the first surface of the substrate.

    Optical modulator using monocrystalline and polycrystalline silicon

    公开(公告)号:US11036069B2

    公开(公告)日:2021-06-15

    申请号:US16356982

    申请日:2019-03-18

    Abstract: Embodiments provide for an optical modulator, comprising: a lower guide, comprising: a lower hub, made of monocrystalline silicon; and a lower ridge, made of monocrystalline silicon that extends in a first direction from the lower hub; an upper guide, including: an upper hub; and an upper ridge, made of monocrystalline silicon that extends in a second direction, opposite of the first direction, from the upper hub and is aligned with the lower ridge; and a gate oxide layer separating the lower ridge from the upper ridge and defining a waveguide region with the lower guide and the upper guide.

    SPLICING OPTICAL FIBERS TO PHOTONIC INTEGRATED CIRCUITS

    公开(公告)号:US20230073957A1

    公开(公告)日:2023-03-09

    申请号:US17447145

    申请日:2021-09-08

    Abstract: Techniques for aligning each of a plurality of optical fibers for coupling to a photonic integrated circuit (PIC). Transmission is detected from each respective optical fiber to the PIC using a probe, and the respective optical fiber is aligned based on the detected transmission. Each of the plurality of optical fibers is coupled to the PIC using at least one of: (i) laser splicing, (ii) laser spot welding, or (iii) arc welding,

    Quantum dot comb laser
    5.
    发明授权

    公开(公告)号:US11245250B2

    公开(公告)日:2022-02-08

    申请号:US16853457

    申请日:2020-04-20

    Abstract: A quantum dot comb laser, is provided that comprises a first waveguide having a first width; and a second waveguide running above the first waveguide that includes: a quantum dot layer; a first region of a second width less than the first width; a second region connected to the first region and comprising a reflective grating; and a third region connected at a first end to the second region and at a second end to an output surface wherein the third region tapers from the second width at the first end to a third width, less than the second width, at the second end.

    Integrated decoupling capacitors
    6.
    发明授权

    公开(公告)号:US11227847B2

    公开(公告)日:2022-01-18

    申请号:US16809446

    申请日:2020-03-04

    Abstract: Embodiments herein describe providing a decoupling capacitor on a first wafer (or substrate) that is then bonded to a second wafer to form an integrated decoupling capacitor. Using wafer bonding means that the decoupling capacitor can be added to the second wafer without having to take up space in the second wafer. In one embodiment, after bonding the first and second wafers, one or more vias are formed through the second wafer to establish an electrical connection between the decoupling capacitor and bond pads on a first surface of the second wafer. An electrical IC can then be flip chipped bonded to the first surface. As part of coupling the decoupling capacitor to the electrical IC, the decoupling capacitor is connected between the rails of a power source (e.g., VDD and VSS) that provides power to the electrical IC.

    III-V laser platforms on silicon with through silicon vias by wafer scale bonding

    公开(公告)号:US11081856B2

    公开(公告)日:2021-08-03

    申请号:US16234105

    申请日:2018-12-27

    Abstract: A laser integrated photonic platform to allow for independent fabrication and development of laser systems in silicon photonics. The photonic platform includes a silicon substrate with an upper surface, one or more through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate. The photonic platform includes a silicon substrate wafer with through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate for mating the photonic platform to a photonics integrated circuit. The photonic platform also includes a III-V semiconductor material structure wafer, where the III-V wafer is bonded to the upper surface of the silicon substrate and includes at least one active layer forming a light source for the photonic platform.

    Optical waveguide emitter with turning waveguide section

    公开(公告)号:US11073661B1

    公开(公告)日:2021-07-27

    申请号:US16751994

    申请日:2020-01-24

    Abstract: Aspects described herein include an optical waveguide emitter that includes a first optical waveguide and a second optical waveguide that are evanescently coupled and collectively configured to selectively propagate only a first mode of a plurality of optical modes. Each of the first optical waveguide and the second optical waveguide extend through an input waveguide section, a turning waveguide section, and an output waveguide section. One or more of the input waveguide section, the turning waveguide section, and the output waveguide section includes an optically active region. The optical waveguide emitter further includes a refractive index-increasing feature in the turning waveguide section.

    Electro-optic modulator with monocrystalline semiconductor waveguides

    公开(公告)号:US10969546B2

    公开(公告)日:2021-04-06

    申请号:US16198251

    申请日:2018-11-21

    Abstract: A method of fabricating an optical apparatus comprises forming a first waveguide on a dielectric substrate. The first waveguide extends in a direction of an optical path. The first waveguide comprises a monocrystalline semiconductor material and is doped with a first conductivity type. The method further comprises depositing a first dielectric layer on the first waveguide, etching a first opening that extends at least partly through the first dielectric layer, and forming a second waveguide at least partly overlapping the first waveguide along the direction. The second waveguide is doped with a different, second conductivity type. Forming the second waveguide comprises depositing a monocrystalline semiconductor material on the first dielectric layer, whereby the first opening is filled with the deposited monocrystalline semiconductor material.

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