MAGNETORESISTIVE ELEMENT FOR A 2D MAGNETIC SENSOR HAVING A REDUCED HYSTERESIS RESPONSE

    公开(公告)号:US20230296703A1

    公开(公告)日:2023-09-21

    申请号:US18245380

    申请日:2021-09-14

    CPC classification number: G01R33/098

    Abstract: A magnetoresistive element for a 2D magnetic sensor, the magnetoresistive element including a tunnel barrier layer included between a reference layer having a reference magnetization and a sense layer having a sense magnetization. The sense layer includes a sense synthetic antiferromagnetic structure including a first sense sublayer in contact with the tunnel barrier layer and separated from a second sense sublayer by a first non-magnetic spacer layer such that the first sense sublayer is antiferromagnetically coupled to the second sense sublayer. The sense layer is configured such that a sense magnetic ratio ΔM defined as:




    Δ
    M
    =


    M

    s

    F
    M
    2



    t

    F
    M
    2



    M

    s

    F
    M
    1



    t

    F
    M
    1




    M

    s

    F
    M
    2



    t

    F
    M
    2


    +
    M

    s

    F
    M
    1



    t

    F
    M
    1








    wherein MSFM1 and MSFM2 are the spontaneous magnetizations of the first and second sense sublayers and tFM1 and tFM2 are the thicknesses of the first and second sense sublayers; and wherein the sense magnetic ratio is between 0.1 and 0.25.

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