High Speed Magnetic Random Access Memory-based Ternary CAM
    2.
    发明申请
    High Speed Magnetic Random Access Memory-based Ternary CAM 有权
    高速磁随机存取存储器三元CAM

    公开(公告)号:US20130208523A1

    公开(公告)日:2013-08-15

    申请号:US13764139

    申请日:2013-02-11

    Abstract: The present disclosure concerns a self-referenced magnetic random access memory-based ternary content addressable memory (MRAM-based TCAM) cell comprising a first and second magnetic tunnel junction; a first and second conducting strap adapted to pass a heating current in the first and second magnetic tunnel junction, respectively; a conductive line electrically connecting the first and second magnetic tunnel junctions in series; a first current line for passing a first field current to selectively write a first write data to the first magnetic tunnel junction; and a second current line for passing a write current to selectively write a second write data to the second magnetic tunnel junction, such that three distinct cell logic states can be written in the MRAM-based TCAM cell.

    Abstract translation: 本公开涉及包括第一和第二磁性隧道结的自参照的基于磁性随机存取存储器的三进制内容可寻址存储器(MRAM-based TCAM)单元; 适于分别在第一和第二磁性隧道结中传递加热电流的第一和第二导电带; 导电线,串联电连接第一和第二磁性隧道结; 用于通过第一场电流以选择性地将第一写入数据写入到第一磁性隧道结的第一电流线; 以及用于传递写入电流以选择性地将第二写入数据写入到第二磁性隧道结的第二电流线,使得可以在基于MRAM的TCAM单元中写入三个不同的单元逻辑状态。

    High speed magnetic random access memory-based ternary CAM
    3.
    发明授权
    High speed magnetic random access memory-based ternary CAM 有权
    高速磁随机存取存储器三元CAM

    公开(公告)号:US08885379B2

    公开(公告)日:2014-11-11

    申请号:US13764139

    申请日:2013-02-11

    Abstract: The present disclosure concerns a self-referenced magnetic random access memory-based ternary content addressable memory (MRAM-based TCAM) cell comprising a first and second magnetic tunnel junction; a first and second conducting strap adapted to pass a heating current in the first and second magnetic tunnel junction, respectively; a conductive line electrically connecting the first and second magnetic tunnel junctions in series; a first current line for passing a first field current to selectively write a first write data to the first magnetic tunnel junction; and a second current line for passing a write current to selectively write a second write data to the second magnetic tunnel junction, such that three distinct cell logic states can be written in the MRAM-based TCAM cell.

    Abstract translation: 本公开涉及包括第一和第二磁性隧道结的自参照的基于磁性随机存取存储器的三进制内容可寻址存储器(MRAM-based TCAM)单元; 适于分别在第一和第二磁性隧道结中传递加热电流的第一和第二导电带; 导电线,串联电连接第一和第二磁性隧道结; 用于通过第一场电流以选择性地将第一写入数据写入到第一磁性隧道结的第一电流线; 以及用于传递写入电流以选择性地将第二写入数据写入到第二磁性隧道结的第二电流线,使得可以在基于MRAM的TCAM单元中写入三个不同的单元逻辑状态。

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