公开(公告)号：US09853139B2

公开(公告)日：2017-12-26

申请号：US15124326

申请日：2015-02-10

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

Inventor： Hidefumi Takaya ,  Jun Saito ,  Akitaka Soeno ,  Toshimasa Yamamoto ,  Narumasa Soejima

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/12 ,  H01L21/761 ,  H01L29/10 ,  H01L29/40 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/7811 ,  H01L21/761 ,  H01L29/06 ,  H01L29/0623 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/12 ,  H01L29/408 ,  H01L29/4236 ,  H01L29/66734 ,  H01L29/7813

Abstract: A semiconductor device provided herein includes: a fourth region of a p-type being in contact with a lower end of the gate trench; a termination trench provided in the front surface in a range outside the second region; a lower end p-type region of the p-type being in contact with a lower end of the termination trench; a lateral p-type region of the p-type being in contact with a lateral surface of the termination trench on an outer circumferential side, connected to the lower end p-type region, and exposed on the front surface; and a plurality of guard ring regions provided on the outer circumferential side with respect to the lateral p-type region and exposed on the front surface.

公开(公告)号：US09755042B2

公开(公告)日：2017-09-05

申请号：US15124920

申请日：2015-02-10

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

Inventor： Jun Saito ,  Tomoharu Ikeda ,  Tomoyuki Shoji ,  Toshimasa Yamamoto

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/04 ,  H01L21/762 ,  H01L29/10 ,  H01L29/78 ,  H01L29/16 ,  H01L29/739 ,  H01L29/423

CPC classification number: H01L29/66068 ,  H01L21/046 ,  H01L21/76237 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/105 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813

Abstract: An insulated gate semiconductor device provided herein includes a front electrode and a rear electrode and is configured to switch a conducting path between the front electrode and the rear electrode. The insulated gate semiconductor device includes a first circumferential trench provided in the front surface; a second circumferential trend provided in the front surface and deeper than the first circumferential trench; a fifth region of a second conductivity type exposed on a bottom surface of the first circumferential trench; a sixth region of the second conductivity type exposed on a bottom surface of the second circumferential trench; and a seventh region of a first conductivity type connected to the third region and separating the fifth region from the sixth region. A front side end portion of the sixth region being located on a rear side with respect to a rear side end portion of the fifth region.