公开(公告)号：US07446037B2

公开(公告)日：2008-11-04

申请号：US11208251

申请日：2005-08-18

申请人： Terry L. Alford ,  Ekta Misra

发明人： Terry L. Alford ,  Ekta Misra

IPC分类号： H01L21/00

CPC分类号： H01L23/53252 ,  H01L21/32051 ,  H01L21/76841 ,  H01L23/53247 ,  H01L27/3276 ,  H01L27/3288 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： In semiconductor integrated circuit and device fabrication interconnect metallization is accomplished by a clad Ag deposited on a SiO2 level on a Si surface. The clad Ag has a layer of an alloy of Ag and Al (5 atomic %) contacting the SiO2, a layer of substantially pure Ag and an outer layer of the Ag and Al alloy. The alloy improves adhesion to the SiO2, avoids agglomeration of the Ag, reduces or eliminates diffusion at the SiO2 surface, reduces electromigration and presents a passive exterior surface.

摘要翻译： 在半导体集成电路和器件制造互连中，通过沉积在Si表面上的SiO2层上的包层Ag来实现金属化。 包层Ag具有与SiO 2接触的Ag和Al（5原子％）的合金层，基本上纯的Ag的层和Ag和Al合金的外层。 该合金提高了与SiO2的粘附性，避免了Ag的聚集，减少或消除了SiO 2表面的扩散，减少了电迁移并呈现了被动的外表面。

公开(公告)号：US06819124B1

公开(公告)日：2004-11-16

申请号：US10234403

申请日：2002-09-03

申请人： David R. Allee ,  Terry L. Alford

发明人： David R. Allee ,  Terry L. Alford

IPC分类号： G01R3108

CPC分类号： G01R31/2858

摘要： A method and apparatus for detecting electromigration at its outset includes a pair of conductive traces deposited on a substrate in an integrated circuit. A multiplicity of conductors are connected along the length of the traces. Current is passed through the traces and the resistances of the traces from one conductor connection to the next are continually monitored by observing the voltage drop from one conductor to the next. The connection of the conductors to the traces may be less than one micrometer apart. When resistance changes as a result of the onset of electromigration, the exact location can be determined and studied in optical or scanning electron micrographs.

摘要翻译： 用于在其开始时检测电迁移的方法和装置包括沉积在集成电路中的衬底上的一对导电迹线。 沿着迹线的长度连接多个导体。 电流通过迹线，并且通过观察从一个导体到下一个导体的电压降，连续监测从一个导体连接到下一个导线的走线电阻。 导体与迹线的连接可以小于1微米。 由于电迁移的结果，当电阻变化时，可以在光学或扫描电子显微照片中确定和研究精确的位置。