Differential threshold voltage non-volatile memory and related methods
    5.
    发明授权
    Differential threshold voltage non-volatile memory and related methods 有权
    差分门限电压非易失性存储器及相关方法

    公开(公告)号:US08462565B2

    公开(公告)日:2013-06-11

    申请号:US13083427

    申请日:2011-04-08

    IPC分类号: G11C7/00

    摘要: Embodiments and examples of differential threshold voltage non-volatile memories and related methods are described herein. In one example, a method for providing an integrated circuit can comprise providing a memory cell coupled to a first bitline and to a second bitline, and at least one of (a) providing a read assist mechanism configured to couple to the memory cell via the first and second bitlines, or (b) providing a memory reset mechanism configured to couple to the memory cell via the first and second bitlines. Providing the memory cell can comprise providing a first transistor comprising a first threshold voltage, providing a second transistor comprising a second threshold voltage, and cross-coupling the first and second transistors of the memory cell together. A difference between the first and second threshold voltages can correspond to a logic state of the memory cell. Other embodiments, examples, and related methods are also disclosed herein.

    摘要翻译: 本文描述了差分阈值电压非易失性存储器及相关方法的实施例和示例。 在一个示例中,用于提供集成电路的方法可以包括提供耦合到第一位线和第二位线的存储器单元,以及(a)提供读取辅助机构中的至少一个,所述读取辅助机构被配置为经由所述第一位线耦合到所述存储器单元 第一和第二位线,或(b)提供被配置为经由第一和第二位线耦合到存储器单元的存储器复位机构。 提供存储器单元可以包括提供包括第一阈值电压的第一晶体管,提供包括第二阈值电压的第二晶体管,以及将存储器单元的第一和第二晶体管交叉耦合在一起。 第一和第二阈值电压之间的差异可以对应于存储器单元的逻辑状态。 本文还公开了其它实施例,示例和相关方法。

    Sensor devices and related methods
    6.
    发明授权
    Sensor devices and related methods 有权
    传感器装置及相关方法

    公开(公告)号:US08319191B2

    公开(公告)日:2012-11-27

    申请号:US13458728

    申请日:2012-04-27

    申请人: David R. Allee

    发明人: David R. Allee

    IPC分类号: G01T1/20

    CPC分类号: G01T3/06

    摘要: Embodiments of sensor systems and related methods of operating and manufacturing the same are described herein. The sensor systems can be used to detect atomic or subatomic particles or radiation. Other embodiments and related methods are also disclosed herein.

    摘要翻译: 本文描述了传感器系统及其相关操作和制造方法的实施例。 传感器系统可用于检测原子或亚原子粒子或辐射。 本文还公开了其它实施例和相关方法。

    SENSOR DEVICES AND RELATED METHODS
    10.
    发明申请
    SENSOR DEVICES AND RELATED METHODS 有权
    传感器装置及相关方法

    公开(公告)号:US20120211660A1

    公开(公告)日:2012-08-23

    申请号:US13458728

    申请日:2012-04-27

    申请人: David R. Allee

    发明人: David R. Allee

    IPC分类号: G01T1/20 H01L31/18 G01T3/06

    CPC分类号: G01T3/06

    摘要: Embodiments of sensor systems and related methods of operating and manufacturing the same are described herein. The sensor systems can be used to detect atomic or subatomic particles or radiation. Other embodiments and related methods are also disclosed herein.

    摘要翻译: 本文描述了传感器系统及其相关操作和制造方法的实施例。 传感器系统可用于检测原子或亚原子粒子或辐射。 本文还公开了其它实施例和相关方法。