摘要:
A hydraulic damper includes a cylinder, a piston working in the cylinder and partitioning the interior thereof into two liquid chambers, two valve discs provided respectively on opposite end surfaces of the piston, two sets of passages opening respectively in opposite end surfaces of the piston to cooperate with respective valve discs, and an orifice communicating permanently the two liquid chambers. A restricting member is provided to change the effective area of the orifice in response to the direction of the liquid flow passing through the orifice.
摘要:
A cylinder device including a main body defining a cylinder therein, a cap member secured to the main body for closing one end of the cylinder, a piston working in the cylinder and having a piston rod passing through the cap member to project out of the main body, and a seal member surrounding the piston rod and being urged to abut with the inner surface of the cap member. There is provided a cavity between the cap member and the seal member, and an opening formed in the cap member for communicating the cavity with the outside.
摘要:
A free cutting steel for machine structural use containing C up to 0.6%, Si up to 2.0%, Mn up to 2.0%, S 0.04 to 0.4%, Te 0.002 to 0.5% and O 0.0010 0.0300%, the balance being substantially Fe exhibits excellent machinability when the MnS-based inclusion is in the form of particles of 5 to 100.mu. long, 1 to 10.mu. wide, wherein the aspect ratio length/width is not larger than 10, and at the density of 20 to 200 particles per 1 mm.sup.2 of the matrix cross section.A free cutting steel for machine structural use containing C up to 0.6%, Si up to 2.0%, Mn up to 2.0%, S 0.04 to 0.4% and Te up to 0.1%, wherein %Te/%S is at least 0.04, O up to 0.003% and N up to 0.0200%, the balance being substantially Fe exhibits improved rolling-contact fatique strength when at least 80% of sulfide-based inclusion particles of 10.mu. long or more have the aspect ratio length/width of 5 or less, and when areal percentage of alumina cluster in the matrix cross section is not higher than 0.5%.
摘要:
According to an embodiment of the present invention, a ratio of a recycled toner in a first developer is detected by an auto toner sensor for recycled toner. The carrying speed of a recycled toner mixer is controlled according to a detection result. Consequently, when recycled toner density in a recycled-toner carrying chamber increases, the recycled toner mixer is rotated at high speed to discharge the recycled toner from the recycled-toner carrying chamber at high speed.
摘要:
A waterproof packing includes: a core member including an electric wire passing part inside and a contacting part for fitting to a mounting side outside; and thermoplastic adhesive adhering to at least the electric wire passing part and the contacting part, wherein the waterproof packing adheres to an electric wire with the thermoplastic adhesive of the electric wire passing part and the waterproof packing adheres to the mounting side with the thermoplastic adhesive of the contacting part by heating. A waterproof connector includes: the waterproof packing; a connector housing for inserting an electric wire having a terminal therein; and a packing receiving part of the connector housing, wherein the waterproof packing is inserted in the packing receiving part as the mounting side.
摘要:
A developing unit has first and second partition walls and which divide the inside of a developer reservoir into first to third chambers parallel to the developing roller, and first to third mixers which are disposed in the first to third chambers. The first mixer supplies developer to the developing roller by stirring and carrying from one end side to the other end side. The second mixer feeds by stirring and carrying the toner replenished from a replenish device and developer fed from the first chamber to one end side of the first mixer. The third mixer feeds the toner collected from a collection mechanism to one end side of the first mixer by stirring and carrying at a speed lower than the second mixer.
摘要:
Internal parameter control signal generating units generate internal parameter control signals for adjusting internal parameters of a semiconductor memory device. Each internal parameter control signal generating unit includes an anti-fuse element formed with a data holding capacitor of a memory cell. The anti-fuse element is blown with application of a high voltage according to a parameter adjustment signal to break down a dielectric film and then, act as a resistance element. The internal parameter control signal generating unit sets a signal level of a corresponding internal parameter control signal in a non-volatile manner according to the presence or absence of a blowing input to the anti-fuse element.
摘要:
A circuit generating a test mode instructing signal includes a test mode register circuit which is set to a state disabling instruction of a test mode in a standby state. An intended test mode can be accurately selected even when the test mode is instructed in accordance with a plurality of external signals varied in timing from each other. A semiconductor device allows accurate and efficient execution of the test without requiring increase in area occupied by an array.
摘要:
A semiconductor memory device includes a first test row decoder (9a) for selecting memory cells in normal rows in a test mode, a second test row decoder (9b) for selecting spare memory cell rows, a first test column decoder (10a) for selecting memory cells in normal columns, and a second test column decoder (10b) for selecting spare memory cell columns. A control circuit (11) may perform switching between four combinations of the row and column decoders by using a control signal (SRT) and a control signal (SCT). All spare memory cells are tested prior to reparation of a defective memory cell for yield enhancement.
摘要:
A semiconductor memory device includes a first test row decoder (9a) for selecting memory cells in normal rows in a test mode, a second test row decoder (9b) for selecting spare memory cell rows, a first test column decoder (10a) for selecting memory cells in normal columns, and a second test column decoder (10b) for selecting spare memory cell columns. A control circuit (11) may perform switching between four combinations of the row and column decoders by using a control signal (SRT) and a control signal (SCT). All spare memory cells are tested prior to reparation of a defective memory cell for yield enhancement.