METHOD FOR MANUFACTURING OXIDE THIN FILM TRANSISTOR
    12.
    发明申请
    METHOD FOR MANUFACTURING OXIDE THIN FILM TRANSISTOR 有权
    制造氧化物薄膜晶体管的方法

    公开(公告)号:US20130264564A1

    公开(公告)日:2013-10-10

    申请号:US13849111

    申请日:2013-03-22

    CPC classification number: H01L29/7869 H01L29/66742

    Abstract: Disclosed is a method for manufacturing an oxide thin film transistor, including: forming a gate electrode on a substrate on which a buffer layer is formed; forming a gate insulation layer on an entire surface of the substrate on which the gate electrode is formed; forming an oxide semiconductor layer on the gate insulation layer; forming a first etch stop layer on the oxide semiconductor layer; forming a second etch stop layer on the first etch stop layer by an atomic layer deposition method; patterning the first etch stop layer and the second etch stop layer, or forming a contact hole, through which a part of the oxide semiconductor layer is exposed, in the first etch stop layer and the second etch stop layer; forming a source electrode and a drain electrode on the first etch stop layer and the second etch stop layer; and forming a passivation layer on the entire surface of the substrate on which the source electrode and the drain electrode are formed.

    Abstract translation: 公开了一种制造氧化物薄膜晶体管的方法,包括:在其上形成有缓冲层的基板上形成栅电极; 在其上形成有栅电极的基板的整个表面上形成栅极绝缘层; 在所述栅极绝缘层上形成氧化物半导体层; 在所述氧化物半导体层上形成第一蚀刻停止层; 通过原子层沉积法在第一蚀刻停止层上形成第二蚀刻停止层; 在第一蚀刻停止层和第二蚀刻停止层中形成第一蚀刻停止层和第二蚀刻停止层,或形成暴露氧化物半导体层的一部分的接触孔; 在所述第一蚀刻停止层和所述第二蚀刻停止层上形成源电极和漏电极; 以及在其上形成有源电极和漏电极的基板的整个表面上形成钝化层。

    DUAL MODE FUNCTION PIXEL AND DUAL MODE FUNCTION DISPLAY INCLUDING THE SAME
    13.
    发明申请
    DUAL MODE FUNCTION PIXEL AND DUAL MODE FUNCTION DISPLAY INCLUDING THE SAME 有权
    双模式功能像素和双模式功能显示包括它们

    公开(公告)号:US20130208022A1

    公开(公告)日:2013-08-15

    申请号:US13677723

    申请日:2012-11-15

    Abstract: Disclosed is a dual mode function pixel that operates either in a first mode or in a second mode according to the intensity of a projected light to have a high visibility regardless of the intensity of projected light. The dual mode function pixel includes: a first membrane on which a self-luminescent element is formed; one or more membranes formed to surround the first membrane; and a lower layer formed below the first membrane and the one or more membranes to be spaced apart from the first membrane and the one or more membranes. The dual mode function pixel is controlled such that the self-luminescent element is driven either to emit light in a first mode operation or to selectively reflect a projected light by utilizing an interference of light generated between the first to one or more membranes and the lower layer in a second mode operation.

    Abstract translation: 公开了一种双模式功能像素,其可以根据投影光的强度在第一模式或第二模式中操作以具有高可见度,而与投射光的强度无关。 双模式功能像素包括:形成有自发光元件的第一膜; 形成为围绕第一膜的一个或多个膜; 以及形成在第一膜下面的下层和与第一膜和一个或多个膜间隔开的一个或多个膜。 控制双模式功能像素,使得自发光元件被驱动以在第一模式操作中发光或者通过利用在第一至一个或多个膜之间产生的光的干涉而选择性地反射投影光, 层在第二模式操作。

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