公开(公告)号：US20170102618A1

公开(公告)日：2017-04-13

申请号：US15386731

申请日：2016-12-21

Applicant: FUJIFILM Corporation

Inventor： Keita KATO ,  Sou KAMIMURA ,  Yuichiro ENOMOTO ,  Kaoru IWATO ,  Shohei KATAOKA ,  Shoichi SAITOH

IPC: G03F7/32 ,  G03F7/40 ,  G03F7/004 ,  G03F7/039 ,  G03F7/16 ,  G03F7/38 ,  G03F7/038 ,  G03F7/20 ,  G03F7/09

CPC classification number: G03F7/325 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/20 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/38 ,  G03F7/40

Abstract: Provided is a method of forming pattern including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing a first organic solvent, wherein in the developer, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less.

公开(公告)号：US20160349620A1

公开(公告)日：2016-12-01

申请号：US15235675

申请日：2016-08-12

Applicant: FUJIFILM Corporation

Inventor： Yuichiro ENOMOTO ,  Shinji TARUTANI ,  Sou KAMIMURA ,  Kaoru IWATO ,  Keita KATO ,  Kana FUJII

IPC: G03F7/32 ,  G03F7/20

CPC classification number: G03F7/325 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/422

Abstract: Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing an organic solvent, wherein the developer contains an alcohol compound (X) at a content of 0 to less than 500 ppm based on the total mass of the developer.

公开(公告)号：US20130266777A1

公开(公告)日：2013-10-10

申请号：US13904236

申请日：2013-05-29

Applicant: FUJIFILM Corporation

Inventor： Keita KATO ,  Kana FUJII ,  Sou KAMIMURA ,  Kaoru IWATO

IPC: G03F7/20

CPC classification number: G03F7/20 ,  G03F7/0397 ,  G03F7/325 ,  G03F7/40 ,  Y10T428/24802

Abstract: A negative pattern forming method, includes: (i) forming a film having a film thickness of 200 nm or more from a chemical amplification resist composition containing (A) a resin capable of increasing a polarity of the resin (A) by an action of an acid to decrease a solubility of the resin (A) for a developer containing one or more organic solvents, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film with a developer containing one or more organic solvents.

Abstract translation: 负图案形成方法包括：（i）从含有（A）树脂（A）的树脂的树脂（A）的极性增加的树脂的化学放大抗蚀剂组合物形成膜厚度为200nm以上的膜， 降低对含有一种或多种有机溶剂的显影剂的树脂（A）的溶解度的酸，（B）在用光化射线或辐射照射时能够产生酸的化合物和（C）溶剂; （ii）使膜曝光，形成曝光膜; 和（iii）用含有一种或多种有机溶剂的显影剂显影曝光的薄膜。