中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

8 records (took 0.023 seconds)

    PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
    5.
    发明申请
    PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE 有权
    图案形成方法，抗紫外线敏感性或辐射敏感性树脂组合物，电阻膜，制造电子器件的方法和电子器件

    公开(公告)号：US20140087310A1

    公开(公告)日：2014-03-27

    申请号：US14093781

    申请日：2013-12-02

    Applicant: FUJIFILM Corporation

    Inventor： Keita KATO ,  Michihiro SHIRAKAWA ,  Hidenori TAKAHASHI ,  Shoichi SAITOH ,  Fumihiro YOSHINO

    IPC: G03F7/038 ,  G03F7/20

    CPC classification number: G03F7/0382 ,  C08F220/12 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/30 ,  G03F7/325

    Abstract: A pattern forming method comprises (i) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing: (A) a resin containing a repeating unit having a group capable of decomposing by the action of an acid to produce a polar group, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern, wherein the content of a repeating unit represented by the following formula (I) is less than 20 mol % based on all repeating units in the resin (A) and the resin (A) contains a repeating unit having a non-phenolic aromatic group other than the repeating unit represented by the specific formula.

    Abstract translation: 图案形成方法包括：（i）通过使用光化射线敏感或辐射敏感性树脂组合物形成膜的步骤，所述树脂组合物包含：（A）含有具有能够通过酸的作用分解的基团的重复单元的树脂 以产生极性基团，（B）在用光化射线或辐射照射时能够产生酸的化合物，和（C）溶剂，（ii）暴露薄膜的步骤，和（iii）显影步骤 通过使用含有机溶剂的显影剂形成负图案的曝光膜，其中由下式（I）表示的重复单元的含量相对于树脂（A）中的所有重复单元和 树脂（A）含有除具有上述特定结构式的重复单元以外的非酚性芳香族基团的重复单元。

    PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, ELECTRONIC DEVICE, BLOCK COPOLYMER AND BLOCK COPOLYMER PRODUCTION METHOD
    6.
    发明申请
    PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, ELECTRONIC DEVICE, BLOCK COPOLYMER AND BLOCK COPOLYMER PRODUCTION METHOD 审中-公开
    图案形成方法，电子装置制造方法，电子装置，嵌段共聚物和嵌段共聚物生产方法

    公开(公告)号：US20160291461A1

    公开(公告)日：2016-10-06

    申请号：US15172639

    申请日：2016-06-03

    Applicant: FUJIFILM Corporation

    Inventor： Hayato YOSHIDA ,  Hiroo TAKIZAWA ,  Keizo KIMURA ,  Shoichi SAITOH ,  Eriko MITANI

    IPC: G03F7/00 ,  H01L21/027 ,  G03F7/32 ,  C08F297/02 ,  G03F7/20

    CPC classification number: G03F7/0002 ,  B82Y40/00 ,  C08F297/02 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/2004 ,  G03F7/322 ,  H01L21/0271

    Abstract: There are provided a pattern forming method in which, in self-organization lithography using a graphoepitaxy method, high miniaturization of patterns can be achieved with high quality and high efficiency by a pattern forming method including (i) a step of forming a block copolymer layer containing a specific first block copolymer or a specific second block copolymer on a specific substrate, (ii) a step of phase-separating the block copolymer layer, and (iii) a step of selectively removing at least one phase of a plurality of phases of the block copolymer layer, an electronic device manufacturing method using the pattern forming method and the electronic device, and a block copolymer used in the pattern forming method and the production method thereof.

    Abstract translation: 提供了一种图案形成方法，其中在使用划线方法的自组织光刻中，通过图案形成方法可以以高质量和高效率实现图案的高度小型化，其包括（i）形成嵌段共聚物层 在特定基材上含有特定的第一嵌段共聚物或特定的第二嵌段共聚物，（ii）相分离嵌段共聚物层的步骤，和（iii）选择性地除去多相的至少一相的步骤 嵌段共聚物层，使用图案形成方法的电子器件制造方法和电子器件，以及用于图案形成方法及其制造方法的嵌段共聚物。

Patent Agency Ranking