NEGATIVE PATTERN FORMING METHOD AND RESIST PATTERN
    4.
    发明申请
    NEGATIVE PATTERN FORMING METHOD AND RESIST PATTERN 有权
    负面图案形成方法和阻力图

    公开(公告)号:US20130266777A1

    公开(公告)日:2013-10-10

    申请号:US13904236

    申请日:2013-05-29

    CPC classification number: G03F7/20 G03F7/0397 G03F7/325 G03F7/40 Y10T428/24802

    Abstract: A negative pattern forming method, includes: (i) forming a film having a film thickness of 200 nm or more from a chemical amplification resist composition containing (A) a resin capable of increasing a polarity of the resin (A) by an action of an acid to decrease a solubility of the resin (A) for a developer containing one or more organic solvents, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film with a developer containing one or more organic solvents.

    Abstract translation: 负图案形成方法包括:(i)从含有(A)树脂(A)的树脂的树脂(A)的极性增加的树脂的化学放大抗蚀剂组合物形成膜厚度为200nm以上的膜, 降低对含有一种或多种有机溶剂的显影剂的树脂(A)的溶解度的酸,(B)在用光化射线或辐射照射时能够产生酸的化合物和(C)溶剂; (ii)使膜曝光,形成曝光膜; 和(iii)用含有一种或多种有机溶剂的显影剂显影曝光的薄膜。

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