Abstract:
Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing an organic solvent, wherein the developer contains an alcohol compound (X) at a content of 0 to less than 500 ppm based on the total mass of the developer.
Abstract:
A pattern forming, method, includes: (i) forming a film from an actinic ray-sensitive or radiation-sensitive resin composition that contains (A) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and decomposing by an action of an acid to decrease a solubility of the compound (A) for an organic solvent; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent.
Abstract:
Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing an organic solvent, wherein the developer contains an alcohol compound (X) at a content of 0 to less than 500 ppm based on the total mass of the developer.
Abstract:
A negative pattern forming method, includes: (i) forming a film having a film thickness of 200 nm or more from a chemical amplification resist composition containing (A) a resin capable of increasing a polarity of the resin (A) by an action of an acid to decrease a solubility of the resin (A) for a developer containing one or more organic solvents, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film with a developer containing one or more organic solvents.