公开(公告)号：US10312447B2

公开(公告)日：2019-06-04

申请号：US15696194

申请日：2017-09-06

Applicant: FUJIFILM CORPORATION

Inventor： Tetsu Kitamura ,  Yosuke Yamamoto ,  Fumiko Tamakuni ,  Yuta Shigenoi ,  Takashi Goto ,  Tetsuya Watanabe

IPC: H01L51/00 ,  C08L65/00 ,  H01L29/786 ,  H01L51/05 ,  C08G61/12 ,  C09D165/00

Abstract: Objects of the present invention are to provide an organic semiconductor element in which carrier mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, and a manufacturing method thereof, to provide a novel compound suitable for an organic semiconductor, and to provide an organic semiconductor film in which mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, a manufacturing method thereof, and an organic semiconductor composition that can suitably form the organic semiconductor film.The organic semiconductor element according to the present invention is an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1 and having a molecular weight of 2,000 or greater. D-A  (1)

公开(公告)号：US10276806B2

公开(公告)日：2019-04-30

申请号：US15943968

申请日：2018-04-03

Applicant: FUJIFILM Corporation ,  The University of Tokyo

Inventor： Hiroaki Tsuyama ,  Kimiatsu Nomura ,  Yoshihisa Usami ,  Masatoshi Yumoto ,  Tetsu Kitamura ,  Masashi Koyanagi ,  Tetsuya Watanabe ,  Toshihiro Okamoto ,  Junichi Takeya

IPC: C07D495/14 ,  C09B57/00 ,  C09D5/24 ,  H01L51/00 ,  H01L51/05

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)

公开(公告)号：US10217942B2

公开(公告)日：2019-02-26

申请号：US15497223

申请日：2017-04-26

Applicant: FUJIFILM CORPORATION

Inventor： Tetsu Kitamura

IPC: H01L51/00 ,  C08G61/12 ,  H01L29/786 ,  H01L51/05

Abstract: An object of the invention is to provide an organic semiconductor element having high mobility and excellent temporal stability under high humidity, and a manufacturing method thereof. Another object is to provide a novel compound suitable for an organic semiconductor. Still another object is to provide an organic semiconductor film having high mobility and excellent temporal stability under high humidity and a composition for forming an organic semiconductor film that can suitably form the organic semiconductor film.The organic semiconductor element according to the invention includes an organic semiconductor layer containing an organic semiconductor having a repeating unit represented by Formula 1.

公开(公告)号：US10115911B2

公开(公告)日：2018-10-30

申请号：US15274016

申请日：2016-09-23

Applicant: FUJIFILM Corporation ,  The University of Tokyo

Inventor： Hiroaki Tsuyama ,  Kimiatsu Nomura ,  Yoshihisa Usami ,  Masatoshi Yumoto ,  Tetsu Kitamura ,  Masashi Koyanagi ,  Tetsuya Watanabe ,  Toshihiro Okamoto ,  Junichi Takeya

IPC: C07D495/14 ,  C09B57/00 ,  C09D5/24 ,  H01L51/00 ,  H01L51/05

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)

公开(公告)号：US09586972B2

公开(公告)日：2017-03-07

申请号：US14632669

申请日：2015-02-26

Applicant: FUJIFILM Corporation

Inventor： Tetsu Kitamura ,  Koji Takaku ,  Wataru Sotoyama

IPC: H01L51/42 ,  C07D493/04 ,  H01L51/00 ,  H01L51/05

CPC classification number: C07D493/04 ,  C09B57/00 ,  C09B69/008 ,  H01L51/0073 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/42 ,  Y02E10/549

Abstract: An organic thin film transistor having a semiconductor active layer containing a compound represented by the formula (1) has a high carrier mobility and a small change in the threshold voltage after repeated operation. R1 to R10 represent H or a substituent, provided that any two adjacent members among R1 to R4 and R6 to R9 are bonded to each other to form a substituted or unsubstituted benzene ring.

Abstract translation: 具有含有式（1）表示的化合物的半导体活性层的有机薄膜晶体管在重复操作之后具有高载流子迁移率和阈值电压的小变化。 R 1至R 10表示H或取代基，条件是R 1至R 4和R 6至R 9中的任何两个相邻的成员彼此键合以形成取代或未取代的苯环。