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    Solid-state imaging device and imaging apparatus
    2.
    发明授权
    Solid-state imaging device and imaging apparatus 有权
    固态成像装置和成像装置

    公开(公告)号：US09143713B2

    公开(公告)日：2015-09-22

    申请号：US14038391

    申请日：2013-09-26

    Applicant: FUJIFILM CORPORATION

    Inventor： Takashi Goto

    IPC: H01L27/00 ,  H04N5/378 ,  H01L27/146

    CPC classification number: H04N5/378 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14641

    Abstract: The invention is directed to a solid-state imaging device in which pixels each including a photoelectric conversion portion formed above a semiconductor substrate and an MOS type signal reading circuit as defined herein are arranged in an array form, wherein: the photoelectric conversion portion includes a pixel electrode, a counter electrode and a photoelectric conversion layer as defined herein; a bias voltage is applied to the counter electrode as defined herein; the signal reading circuit includes a charge storage portion, an output transistor and a protection circuit as defined herein; the protection circuit has an impurity region as defined herein; the output transistor has an impurity region as defined herein; and the impurity regions of the protection circuits and the impurity regions of the output transistors are used in common to every adjacent two of the pixels as defined herein.

    Abstract translation: 本发明涉及一种固态成像装置，其中包括形成在半导体衬底上方的光电转换部分和如本文所定义的MOS型信号读取电路的像素排列成阵列形式，其中：光电转换部分包括： 像素电极，对电极和光电转换层; 偏置电压施加到如本文所定义的对电极; 信号读取电路包括如本文所定义的电荷存储部分，输出晶体管和保护电路; 保护电路具有如本文所定义的杂质区域; 输出晶体管具有如本文所定义的杂质区域; 并且保护电路的杂质区域和输出晶体管的杂质区域与本文所定义的每个相邻的两个像素共同使用。

    Solid-state imaging device and imaging apparatus
    3.
    发明授权
    Solid-state imaging device and imaging apparatus 有权
    固态成像装置和成像装置

    公开(公告)号：US08817149B2

    公开(公告)日：2014-08-26

    申请号：US13732988

    申请日：2013-01-02

    Applicant: FUJIFILM Corporation

    Inventor： Takashi Goto

    IPC: H04N3/14 ,  H04N5/335

    CPC classification number: H04N5/335 ,  H01L27/14609 ,  H01L27/14647 ,  H01L27/14667 ,  H04N5/355 ,  H04N5/3698 ,  H04N5/374

    Abstract: A solid-state imaging device includes a photoelectric conversion layer, a MOS transistor circuit. The photoelectric conversion layer is formed over a semiconductor substrate. The MOS transistor circuit reads out a signal corresponding to charges generated in the photoelectric conversion layer and then collected, and that is formed in the semiconductor substrate, the charges having a given polarity. The MOS transistor circuit includes a charge accumulation portion, a reset transistor, and an output transistor. The charge accumulation portion is electrically connected with the photoelectric conversion layer. The reset transistor resets a potential of the charge accumulation portion to a reset potential. The output transistor outputs a signal corresponding to the potential of the charge accumulation portion. The reset transistor and the output transistor have carriers whose polarity is opposite to the given polarity. In the MOS transistor circuit, following formula (1) is satisfied: GND

    Abstract translation: 固态成像装置包括光电转换层，MOS晶体管电路。 光电转换层形成在半导体衬底上。 MOS晶体管电路读出与光电转换层中产生的电荷对应的信号，然后在半导体衬底中形成具有给定极性的电荷。 MOS晶体管电路包括电荷累积部分，复位晶体管和输出晶体管。 电荷累积部分与光电转换层电连接。 复位晶体管将电荷累积部分的电位复位到复位电位。 输出晶体管输出对应于电荷累积部分的电位的信号。 复位晶体管和输出晶体管具有极性与给定极性相反的载流子。 在MOS晶体管电路中，满足下式（1）：GND

    Microcrystalline organic semiconductor film, organic semiconductor transistor, and method of manufacturing organic semiconductor transistor
    5.
    发明授权
    Microcrystalline organic semiconductor film, organic semiconductor transistor, and method of manufacturing organic semiconductor transistor 有权

    公开(公告)号：US10985327B2

    公开(公告)日：2021-04-20

    申请号：US16358910

    申请日：2019-03-20

    Applicant: FUJIFILM Corporation

    Inventor： Takashi Goto ,  Eiji Fukuzaki ,  Tetsuya Watanabe

    IPC: H01L51/00 ,  C07D517/14 ,  C07D493/14 ,  C07D495/14 ,  C07D513/14 ,  C07D498/14 ,  H01L29/786 ,  H01L51/05

    Abstract: Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. In the organic semiconductor film, the formation or propagation of cracks can be effectively suppressed even in a case where the organic semiconductor film is patterned or is exposed to high heat.
    Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. The microcrystalline organic semiconductor film includes a compound represented by the following Formula (1) that has a molecular weight of 3000 or lower and in which a crystal domain size is 1 nm to 100 nm. X, Y, and Z each independently represent a specific ring-constituting atom. R1 and R2 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. R3 and R4 each independently represent a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. m and n each independently represent an integer of 0 to 2.

    Solid-state imaging device and imaging apparatus
    6.
    发明授权
    Solid-state imaging device and imaging apparatus 有权
    固态成像装置和成像装置

    公开(公告)号：US08953078B2

    公开(公告)日：2015-02-10

    申请号：US14034438

    申请日：2013-09-23

    Applicant: Fujifilm Corporation

    Inventor： Takashi Goto

    IPC: H04N3/14 ,  H04N5/335 ,  H04N5/3745 ,  H01L27/146 ,  H04N5/361 ,  H04N5/374

    CPC classification number: H04N5/3745 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14643 ,  H04N5/361 ,  H04N5/374

    Abstract: The invention is directed to a solid-state imaging device in which pixels each including a photoelectric conversion portion formed above a semiconductor substrate and an MOS type signal reading circuit formed at the semiconductor substrate and provided for reading out a signal corresponding to electric charges generated in the photoelectric conversion portion are disposed in an array form, wherein: the photoelectric conversion portion includes a pixel electrode, a counter electrode and a photoelectric conversion layer as defined herein; a bias voltage is applied to the counter electrode as defined herein; the signal reading circuit includes a charge storage portion, an output transistor and a reset transistor as defined herein; the charge storage portion includes a first charge storage region, a second charge storage region and a separation/connection region as defined herein; and the output transistor outputs a signal corresponding to the potential of the second charge storage region.

    Abstract translation: 本发明涉及一种固态成像装置，其中各自包括形成在半导体衬底上的光电转换部分的像素和形成在半导体衬底上的MOS型信号读取电路，用于读出对应于在 光电转换部分以阵列形式布置，其中：光电转换部分包括如本文所定义的像素电极，对电极和光电转换层; 偏置电压施加到如本文所定义的对电极; 信号读取电路包括如本文所定义的电荷存储部分，输出晶体管和复位晶体管; 电荷存储部分包括如本文所定义的第一电荷存储区域，第二电荷存储区域和分离/连接区域; 并且输出晶体管输出与第二电荷存储区域的电位相对应的信号。

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