公开(公告)号：US09447111B2

公开(公告)日：2016-09-20

申请号：US14685894

申请日：2015-04-14

申请人： FUJIFILM Corporation

发明人： Tetsu Kitamura ,  Koji Takaku ,  Wataru Sotoyama

IPC分类号： H01L51/00 ,  C07D493/04 ,  C07F7/08 ,  C09D125/06 ,  H01L51/05

CPC分类号： C07D493/04 ,  C07F7/0838 ,  C09D125/06 ,  H01L51/0035 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0068 ,  H01L51/0073 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/0558

摘要： An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility and a small fluctuation of the threshold voltage after repeated driving. R1 to R12 represent a hydrogen atom or a substituent, provided that at least one of R1 to R12 represents a substituent represented by the formula (W), or all of R1 to R12 represent a hydrogen atom. * represents a position bonded to the naphthobisbenzofuran skeleton. L represents a single bond, a divalent linking group, an oligoethyleneoxy group having a repeating number of an ethyleneoxy unit of 2 or more, or an oligosiloxane group having 2 or more silicon atoms.

公开(公告)号：US09714253B2

公开(公告)日：2017-07-25

申请号：US14632741

申请日：2015-02-26

申请人： FUJIFILM Corporation

发明人： Tetsu Kitamura ,  Koji Takaku ,  Wataru Sotoyama ,  Yuki Hirai ,  Masaru Kinoshita ,  Yuuta Shigenoi

IPC分类号： C07D307/91 ,  H01L51/00 ,  C07D493/04 ,  C07F7/08 ,  H01L51/05

CPC分类号： C07D493/04 ,  C07F7/0812 ,  C07F7/0838 ,  H01L51/0062 ,  H01L51/0065 ,  H01L51/0073 ,  H01L51/0545 ,  H01L51/0558

摘要： An organic thin film transistor having a semiconductor active layer containing a compound represented by the formula (1) has a high carrier mobility and a small change in the threshold voltage after repeated operation. R1 to R10 represent H or a substituent, provided that at least one of R1 to R4 and R6 to R9 represents a substituent represented by -L-R, L represents a specific divalent linking group, and R represents an alkyl group, an oligooxyethylene group, an oligosiloxane group, or a trialkylsilyl group.

公开(公告)号：US09954185B2

公开(公告)日：2018-04-24

申请号：US14815269

申请日：2015-07-31

申请人： FUJIFILM Corporation

发明人： Koji Takaku ,  Yuki Hirai ,  Wataru Sotoyama ,  Masaru Kinoshita

IPC分类号： H01L51/00 ,  H01B1/00 ,  H01B1/12 ,  C07D209/80 ,  C07D409/04 ,  C07D409/14 ,  H01L51/05

CPC分类号： H01L51/0072 ,  C07D209/80 ,  C07D409/04 ,  C07D409/14 ,  H01B1/121 ,  H01L51/0065 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0545 ,  H01L51/0558

摘要： An organic thin film transistor containing a compound represented by the following formula in a semiconductor active layer has a high carrier mobility and a small change in the threshold voltage after repeated driving. Z represents a substituent having a length of 3.7 Å or less, and at least one of R1 to R8 represents -L-R wherein L represents alkylene, etc., and R represents alkyl, etc.

公开(公告)号：US09899605B2

公开(公告)日：2018-02-20

申请号：US14865649

申请日：2015-09-25

申请人： FUJIFILM Corporation

发明人： Yasunori Yonekuta ,  Koji Takaku ,  Wataru Sotoyama

IPC分类号： H01L51/00 ,  C07F7/18 ,  C07F7/08 ,  C07D517/06 ,  C07D498/06 ,  C07D513/06 ,  H01L51/05

CPC分类号： H01L51/0071 ,  C07D498/06 ,  C07D513/06 ,  C07D517/06 ,  C07F7/0812 ,  C07F7/0838 ,  C07F7/1804 ,  H01L51/0058 ,  H01L51/0065 ,  H01L51/0068 ,  H01L51/0094 ,  H01L51/0545

摘要： An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility, a small change in the threshold voltage after repeated driving and a high solubility in an organic solvent. A1 and A2 represent S, O or Se; at least one of R1 to R6 represents a substituent represented by *-L-R wherein L represents a divalent linking group and R represents a hydrogen atom, an alkyl group, an oligooxyethylene group, an oligosiloxane group or a trialkylsilyl group.

公开(公告)号：US09711733B2

公开(公告)日：2017-07-18

申请号：US14816517

申请日：2015-08-03

申请人： FUJIFILM Corporation

发明人： Koji Takaku ,  Yasunori Yonekuta ,  Wataru Sotoyama ,  Masaru Kinoshita

IPC分类号： C07D277/60 ,  C07D417/00 ,  C07D277/84 ,  C07D209/76 ,  C08K5/34 ,  C08K5/48 ,  H01L51/00 ,  C07F7/18 ,  C08K5/47 ,  C09D125/06 ,  C08J5/18 ,  C07D498/04 ,  C07D513/04 ,  C07F7/08 ,  C09D125/16 ,  H01L51/05

CPC分类号： H01L51/0071 ,  C07D498/04 ,  C07D513/04 ,  C07F7/0838 ,  C07F7/1804 ,  C08J5/18 ,  C08J2325/06 ,  C08K5/47 ,  C09B57/00 ,  C09D125/06 ,  C09D125/16 ,  H01L51/0035 ,  H01L51/0065 ,  H01L51/0068 ,  H01L51/0094 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

摘要： An organic thin film transistor containing a compound represented by one of the following formulae in a semiconductor active layer has a high carrier mobility and a small change in the threshold voltage after repeated driving. X represents S or O, and at least one of R1 to R6 represents -L-R wherein L represents alkylene, etc., and R represents alkyl, etc.

公开(公告)号：US09586972B2

公开(公告)日：2017-03-07

申请号：US14632669

申请日：2015-02-26

申请人： FUJIFILM Corporation

发明人： Tetsu Kitamura ,  Koji Takaku ,  Wataru Sotoyama

IPC分类号： H01L51/42 ,  C07D493/04 ,  H01L51/00 ,  H01L51/05

CPC分类号： C07D493/04 ,  C09B57/00 ,  C09B69/008 ,  H01L51/0073 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/42 ,  Y02E10/549

摘要： An organic thin film transistor having a semiconductor active layer containing a compound represented by the formula (1) has a high carrier mobility and a small change in the threshold voltage after repeated operation. R1 to R10 represent H or a substituent, provided that any two adjacent members among R1 to R4 and R6 to R9 are bonded to each other to form a substituted or unsubstituted benzene ring.

摘要翻译： 具有含有式（1）表示的化合物的半导体活性层的有机薄膜晶体管在重复操作之后具有高载流子迁移率和阈值电压的小变化。 R 1至R 10表示H或取代基，条件是R 1至R 4和R 6至R 9中的任何两个相邻的成员彼此键合以形成取代或未取代的苯环。