Abstract:
A hardcoat film includes a substrate; a hardcoat layer; and an anti-scratch layer, where the hardcoat layer includes a cured product of polyorganosilsesquioxane, the polyorganosilsesquioxane has a siloxane constitutional unit containing a (meth)acryloyl group and a siloxane constitutional unit containing an epoxy group and is represented by the General Formula (1), a film thickness of the anti-scratch layer is 0.05 to 5 μm, and the anti-scratch layer includes a cured product of a compound having two or more (meth)acryloyl groups in one molecule, where Ra represents a group containing a (meth)acryloyl group; Rb represents a group containing an epoxy group; Rc represents a monovalent substituent; p, q, and r represent a proportion of Ra, Rb, and Rc in the General Formula (1) respectively; p+q+r is 100; p and q are greater than 0; r is equal to or greater than 0; p/q is 0.01 to 99.
Abstract:
An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility and a small fluctuation of the threshold voltage after repeated driving. R1 to R12 represent a hydrogen atom or a substituent, provided that at least one of R1 to R12 represents a substituent represented by the formula (W), or all of R1 to R12 represent a hydrogen atom. * represents a position bonded to the naphthobisbenzofuran skeleton. L represents a single bond, a divalent linking group, an oligoethyleneoxy group having a repeating number of an ethyleneoxy unit of 2 or more, or an oligosiloxane group having 2 or more silicon atoms.
Abstract:
A polyorganosilsesquioxane includes: a constitutional unit (a) having a fluorine atom-containing group; a constitutional unit (b) having a cationically polymerizable group; and a constitutional unit (c) having a radically polymerizable group.
Abstract:
A gas separation membrane includes a gas separation layer containing a polyimide compound having a repeating unit represented by Formula (I), in Formula (I), RI represents a hydrogen atom, an alkyl group, or a halogen atom, Xa represents a sulfamoyl group, an alkoxysulfonyl group, a carboxy group, a hydroxy group, an acyloxy group, or a halogen atom, and R represents a mother nucleus having a specific structure.
Abstract:
An organic thin film transistor having a semiconductor active layer containing a compound represented by the formula (1) has a high carrier mobility and a small change in the threshold voltage after repeated operation. R1 to R10 represent H or a substituent, provided that at least one of R1 to R4 and R6 to R9 represents a substituent represented by -L-R, L represents a specific divalent linking group, and R represents an alkyl group, an oligooxyethylene group, an oligosiloxane group, or a trialkylsilyl group.
Abstract:
Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)
Abstract:
The present invention provides a liquid crystal film having an optically anisotropic layer having excellent alignment and excellent adhesiveness. The present invention further provides an optical laminate, a circularly polarizing plate, and an organic EL display device, each of which uses the optically anisotropic layer. The liquid crystal film of an embodiment of the present invention is a liquid crystal film having at least an optically anisotropic layer formed with a liquid crystal composition including a polymerizable liquid crystal compound and a fluoroaliphatic group-containing copolymer, and a support, in which the fluoroaliphatic group-containing copolymer has a repeating unit derived from a fluoroaliphatic group-containing monomer represented by General Formula (1) and a repeating unit having a polymerizable group polymerizable with the polymerizable liquid crystal compound.
Abstract:
An m-phenylenediamine compound is represented by the following General Formula (I), (II), or (III). R1 represents a hydrogen atom, an alkyl group, a cycloalkyl group, or an aryl group. R2, R3, and R4 each represent an alkyl group. R5 and R6 each represent an alkyl group. X represents a chlorine atom or a bromine atom. A method for producing a polymer compound includes obtaining a polymer compound by using the m-phenylenediamine compound represented by General Formula (I) as a raw material.
Abstract:
Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material. (X represents an oxygen, sulfur, selenium, or tellurium atom or NR5; Y and Z each represents CR6, an oxygen, sulfur, selenium, or nitrogen atom, or NR7; a ring containing Y and Z is an aromatic heterocycle; any one of R1 and R2 and the aromatic heterocycle containing Y and Z or any one of R3 and R4 and a benzene ring may be bonded to each other through a specific divalent linking group; R1, R2, and R5 to R8 each represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group; R3 and R4 each represent an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or heteroaryl group; and each of m and n is an integer of 0 to 2).
Abstract:
Objects of the present invention is to provide an organic semiconductor element having high mobility and excellent temporal stability under high humidity, and a manufacturing method thereof, to provide a novel compound which is suitable as an organic semiconductor, and to provide an organic semiconductor film having high mobility and excellent temporal stability under high humidity and a manufacturing method thereof, and a composition for forming an organic semiconductor film that can suitably form the organic semiconductor film.The organic semiconductor element according to the present invention has an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1.