Inductance comprising turns on several metallizaton levels
    13.
    发明申请
    Inductance comprising turns on several metallizaton levels 有权
    电感包括几个金属化水平的转弯

    公开(公告)号:US20090027152A1

    公开(公告)日:2009-01-29

    申请号:US12218670

    申请日:2008-07-17

    Abstract: An inductance formed in a stacking of insulating layers, the inductance comprising first and second half-turns, each first half-turn being at least partly symmetrical to one of the second half-turns, the first half-turns being distributed in first groups of first half-turns at least partly aligned along the insulating layer stacking direction and the second half-turns being distributed in second groups of second half-turns at least partly aligned along the insulating layer stacking direction. For any pair of first adjacent half-turns of a same group, one of the first half-turns in the pair is electrically series-connected to the other one of the first half-turns in the pair by a single second half turn and for each pair of second adjacent half-turns of a same group, one of the second half-turns in the pair is electrically series-connected to the other one of the second half-turns in the pair by a single first half-turn.

    Abstract translation: 电感形成在绝缘层的层叠中,电感包括第一和第二半匝,每个前半匝至少部分地与第二匝之一对称,第一匝分布在第一组中 所述第一半匝至少部分地沿所述绝缘层层叠方向排列,并且所述第二半匝分布在沿所述绝缘层堆叠方向至少部分对准的第二组第二半匝中。 对于相同组的任何一对第一相邻半匝,该对中的第一半匝之一中的一个第一半匝中的一个与该对中的另一个第一半匝电连接单个第二半匝,并且对于 同一组中的每对第二相邻半匝,该对中的第二半匝中的一个通过单个第一半匝电连接到该对中的另一个第二半匝。

    Semiconductor device
    14.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US20080079170A1

    公开(公告)日:2008-04-03

    申请号:US11541960

    申请日:2006-10-02

    Abstract: An electronic component for microwave transmission includes a high resistivity substrate on which is at least located several metallization layers divided into portions. A first set of piled up portions defines a ground ribbon and a second set of piled up portions defines a power ribbon. At least a first active portion of said ground ribbon and a first active portion of said power ribbon are respectively located between the substrate and an uppermost one of the several metallization layers. The electronic component in one implementation is a coplanar waveguide.

    Abstract translation: 用于微波传输的电子部件包括高电阻率基底,其上至少位于几个划分成部分的金属化层。 第一组堆叠部分限定了接地带状物,第二组堆叠部分限定了功率带。 所述接地带的至少第一有源部分和所述功率带的第一有源部分分别位于所述基板和所述多个金属化层中的最上面的一个之间。 一个实施例中的电子部件是共面波导。

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