公开(公告)号：US20170175053A1

公开(公告)日：2017-06-22

申请号：US15129326

申请日：2015-01-30

Applicant: FUJIMI INCORPORATED

Inventor： SHUUGO YOKOTA ,  Shota SUZUKI ,  Tomohiko AKATSUKA ,  Yasuyuki YAMATO ,  Koichi SAKABE ,  Yoshihiro IZAWA ,  Yukinobu YOSHIZAKI ,  Chiaki SAITO

IPC: C11D7/22 ,  H01L21/02 ,  C11D7/32 ,  C23G5/028 ,  C11D7/26 ,  C11D7/28

CPC classification number: C11D7/22 ,  C09K3/1409 ,  C11D7/26 ,  C11D7/28 ,  C11D7/3209 ,  C23G5/028 ,  H01L21/02024 ,  H01L21/02041 ,  H01L21/31053 ,  H01L21/3212

Abstract: The purpose of the present invention is to provide a means to sufficiently remove impurities remaining on the surface of a polishing object after CMP.The polishing composition of the present invention is a polishing composition which is used after polishing has been performed by using a polishing composition (A) including abrasive grains or an organic compound (A), and is characterized by including an organic compound (B) which includes at least one atom selected from the group consisting of a fluorine atom, an oxygen atom, a nitrogen atom, and a chlorine atom and has a molecular weight of 100 or more, a pH adjusting agent, and 0 to 1% by mass of abrasive grains.