公开(公告)号：US20160079116A1

公开(公告)日：2016-03-17

申请号：US14487250

申请日：2014-09-16

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Thomas Werner ,  Oliver Aubel ,  Frank Feustel

IPC: H01L21/768 ,  H01L23/528 ,  H01L21/56 ,  H01L27/02

CPC classification number: H01L23/528 ,  H01L21/2885 ,  H01L21/56 ,  H01L21/76807 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53214 ,  H01L23/53219 ,  H01L23/53228 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53257 ,  H01L23/53261 ,  H01L23/5329 ,  H01L23/53295 ,  H01L23/562 ,  H01L23/585 ,  H01L25/0655 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor wafer is provided including a plurality of dies, each of the plurality of dies including a plurality of semiconductor devices, a plurality of die seals, each of the plurality of die seals being formed at a perimeter of one of the plurality of dies, and a plurality of electrically conductive links, each of the plurality of conductive links connecting one of the plurality of die seals with another one of the plurality of die seals.

Abstract translation: 提供一种半导体晶片，其包括多个管芯，所述多个管芯中的每一个包括多个半导体器件，多个管芯密封件，所述多个管芯密封件中的每一个形成在所述多个管芯中的一个的周边， 以及多个导电连接件，所述多个导电连接中的每一个将所述多个模具密封件中的一个与所述多个模具密封件中的另一个连接。

公开(公告)号：US20160260794A1

公开(公告)日：2016-09-08

申请号：US14634978

申请日：2015-03-02

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Oliver Aubel ,  Frank Feustel ,  Thomas Werner

IPC: H01L49/02

CPC classification number: H01L28/10 ,  H01L23/5227

Abstract: A method of forming a semiconductor device including an inductor is provided, including forming a first dielectric layer of a first dielectric material over a substrate, removing part of the first dielectric layer to create an opening in the first dielectric layer, filling the opening with a second dielectric layer of a second dielectric material different from the first dielectric material, forming a trench in the second dielectric layer, and filling the trench with a conductive material to form an inductor coil. A semiconductor device is provided that includes a first dielectric layer made of a first dielectric material, a second dielectric layer made of a second dielectric material different from the first dielectric material and embedded in the first dielectric layer and a trench filled with a conductive material and formed in the second dielectric layer, representing at least a part of an inductor coil of the inductor.

Abstract translation: 提供一种形成包括电感器的半导体器件的方法，包括在衬底上形成第一电介质材料的第一电介质层，去除第一电介质层的一部分以在第一电介质层中形成开口，用 第二电介质材料与第一介电材料不同的第二电介质层，在第二介电层中形成沟槽，并用导电材料填充沟槽以形成电感线圈。 提供一种半导体器件，其包括由第一电介质材料制成的第一电介质层，由与第一电介质材料不同并嵌入第一电介质层的第二电介质材料制成的第二电介质层和填充有导电材料的沟槽， 形成在第二电介质层中，代表电感器的电感线圈的至少一部分。

公开(公告)号：US20160240473A1

公开(公告)日：2016-08-18

申请号：US15137740

申请日：2016-04-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Thomas Werner ,  Oliver Aubel ,  Frank Feustel

IPC: H01L23/528 ,  H01L25/065 ,  H01L23/532

CPC classification number: H01L23/528 ,  H01L21/2885 ,  H01L21/56 ,  H01L21/76807 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53214 ,  H01L23/53219 ,  H01L23/53228 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53257 ,  H01L23/53261 ,  H01L23/5329 ,  H01L23/53295 ,  H01L23/562 ,  H01L23/585 ,  H01L25/0655 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor wafer is provided including a plurality of dies, each of the plurality of dies including a plurality of semiconductor devices, a plurality of die seals, each of the plurality of die seals being formed at a perimeter of one of the plurality of dies, and a plurality of electrically conductive links, each of the plurality of conductive links connecting one of the plurality of die seals with another one of the plurality of die seals.

公开(公告)号：US08716126B2

公开(公告)日：2014-05-06

申请号：US13769446

申请日：2013-02-18

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Thomas Werner ,  Peter Baars ,  Frank Feustel

IPC: H01L21/4763

CPC classification number: H01L23/5384 ,  H01L21/76808 ,  H01L21/76813 ,  H01L21/76816 ,  H01L23/5226 ,  H01L27/088 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed herein is an illustrative semiconductor device that includes a transistor having drain and source regions and a gate electrode structure. The disclosed semiconductor device also includes a contact bar formed in a first dielectric material that connects to one of the drain and source regions and includes a first conductive material, the contact bar extending along a width direction of the transistor. Moreover, the illustrative device further includes, among other things, a conductive line formed in a second dielectric material, the conductive line including an upper portion having a top width extending along a length direction of the transistor and a lower portion having a bottom width extending along the length direction that is less than the top width of the upper portion, wherein the conductive line connects to the contact bar and includes a second conductive material that differs from the first conductive material.

Abstract translation: 本文公开了一种说明性的半导体器件，其包括具有漏极和源极区域以及栅电极结构的晶体管。 所公开的半导体器件还包括形成在第一电介质材料中的接触杆，所述接触杆连接到漏极和源极区域之一并且包括第一导电材料，所述接触棒沿晶体管的宽度方向延伸。 此外，说明性器件还包括形成在第二电介质材料中的导电线，该导电线包括具有沿晶体管的长度方向延伸的顶部宽度的上部，以及具有底部宽度延伸的下部 沿着所述长度方向小于所述上部的顶部宽度，其中所述导电线连接到所述接触杆并包括与所述第一导电材料不同的第二导电材料。