公开(公告)号：US09478671B2

公开(公告)日：2016-10-25

申请号：US14602940

申请日：2015-01-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Alexandru Romanescu

IPC: H01L29/8605 ,  H01L49/02 ,  H01L27/06

CPC classification number: H01L29/8605 ,  H01L27/0629 ,  H01L28/20 ,  H01L28/24 ,  Y10S438/914

Abstract: A semiconductor structure includes a substrate and a resistor provided over the substrate. The resistor includes a first material layer, a second material layer, a first contact structure and a second contact structure. The first material layer includes at least one of a metal and a metal compound. The second material layer includes a semiconductor material. The second material layer is provided over the first material layer and includes a first sub-layer and a second sub-layer. The second sub-layer is provided over the first sub-layer. The first sub-layer and the second sub-layer are differently doped. Each of the first contact structure and the second contact structure provides an electrical connection to the second sub-layer of the second material layer.

公开(公告)号：US09324654B2

公开(公告)日：2016-04-26

申请号：US14459607

申请日：2014-08-14

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Ricardo Mikalo ,  Andreas Kurz ,  Alexandru Romanescu

IPC: H01L23/52 ,  H01L23/525 ,  H01L27/102 ,  H01L23/62 ,  H01L27/112

CPC classification number: H01L23/5256 ,  G11C17/16 ,  H01L23/345 ,  H01L23/62 ,  H01L27/1026 ,  H01L27/11206 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Integrated circuits including electronic fuse structures are disclosed. In some examples, the electronic fuse structure includes a fuse part and first and second pre-heating lines positioned generally parallel to and co-planar with the fuse part, and electrically connected with the fuse part. The electronic fuse structure also includes a cathode physically and electrically connected to the first pre-heating line and an anode physically and electrically connected to the second pre-heating line.

Abstract translation: 公开了包括电子熔断器结构的集成电路。 在一些示例中，电子熔丝结构包括熔丝部分和大致平行于并且与熔丝部分共面定位并与熔丝部分电连接的第一和第二预热线。 电子熔丝结构还包括物理地和电连接到第一预热线的阴极和物理地和电连接到第二预热线的阳极。

公开(公告)号：US20160049366A1

公开(公告)日：2016-02-18

申请号：US14459607

申请日：2014-08-14

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Ricardo Mikalo ,  Andreas Kurz ,  Alexandru Romanescu

IPC: H01L23/525

CPC classification number: H01L23/5256 ,  G11C17/16 ,  H01L23/345 ,  H01L23/62 ,  H01L27/1026 ,  H01L27/11206 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Integrated circuits including electronic fuse structures are disclosed. In some examples, the electronic fuse structure includes a fuse part and first and second pre-heating lines positioned generally parallel to and co-planar with the fuse part, and electrically connected with the fuse part. The electronic fuse structure also includes a cathode physically and electrically connected to the first pre-heating line and an anode physically and electrically connected to the second pre-heating line.

Abstract translation: 公开了包括电子熔断器结构的集成电路。 在一些示例中，电子熔丝结构包括熔丝部分和大致平行于并且与熔丝部分共面定位并与熔丝部分电连接的第一和第二预热线。 电子熔丝结构还包括物理地和电连接到第一预热线的阴极和物理地和电连接到第二预热线的阳极。

公开(公告)号：US20150311272A1

公开(公告)日：2015-10-29

申请号：US14261021

申请日：2014-04-24

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Alexandru Romanescu ,  Gerd Zschätzsch ,  Christian Schippel

IPC: H01L49/02 ,  H01L27/06 ,  H01L21/28

CPC classification number: H01L27/0629 ,  H01L28/24 ,  H01L29/665 ,  H01L29/78

Abstract: Integrated circuits having resistor structures formed from gate metal and methods for fabricating such integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate with a resistor area and a transistor area. The method deposits a gate metal over the resistor area and the transistor area of the semiconductor substrate, and the gate metal forms a gate metal layer in the resistor area. The method includes etching the gate metal to form a resistor structure from the gate metal layer in the resistor area. Further, the method includes forming contacts to the resistor structure in the resistor area.

Abstract translation: 提供了具有由栅极金属形成的电阻结构的集成电路及其制造方法。 在一个实施例中，制造集成电路的方法包括：提供具有电阻区域和晶体管区域的半导体衬底。 该方法在电阻器区域和半导体衬底的晶体管区域上沉积栅极金属，并且栅极金属在电阻器区域中形成栅极金属层。 该方法包括蚀刻栅极金属以从电阻器区域中的栅极金属层形成电阻器结构。 此外，该方法包括在电阻器区域中形成与电阻器结构的接触。

公开(公告)号：US20150137316A1

公开(公告)日：2015-05-21

申请号：US14602940

申请日：2015-01-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Alexandru Romanescu

IPC: H01L29/8605

CPC classification number: H01L29/8605 ,  H01L27/0629 ,  H01L28/20 ,  H01L28/24 ,  Y10S438/914

Abstract: A semiconductor structure includes a substrate and a resistor provided over the substrate. The resistor includes a first material layer, a second material layer, a first contact structure and a second contact structure. The first material layer includes at least one of a metal and a metal compound. The second material layer includes a semiconductor material. The second material layer is provided over the first material layer and includes a first sub-layer and a second sub-layer. The second sub-layer is provided over the first sub-layer. The first sub-layer and the second sub-layer are differently doped. Each of the first contact structure and the second contact structure provides an electrical connection to the second sub-layer of the second material layer.

Abstract translation: 半导体结构包括衬底和设置在衬底上的电阻器。 电阻器包括第一材料层，第二材料层，第一接触结构和第二接触结构。 第一材料层包括金属和金属化合物中的至少一种。 第二材料层包括半导体材料。 第二材料层设置在第一材料层上并且包括第一子层和第二子层。 第二子层设置在第一子层上。 第一子层和第二子层是不同的掺杂的。 第一接触结构和第二接触结构中的每一个提供到第二材料层的第二子层的电连接。