公开(公告)号：US20210202717A1

公开(公告)日：2021-07-01

申请号：US16730371

申请日：2019-12-30

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Vibhor JAIN ,  Steven M. SHANK ,  John J. PEKARIK ,  Anthony K. STAMPER

IPC: H01L29/66 ,  H01L21/762 ,  H01L21/02 ,  H01L29/10 ,  H01L29/15 ,  H01L29/16 ,  H01L29/267

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to transistors with an oxygen lattice structure and methods of manufacture. The structure includes: a sub-collector region in a substrate; a collector region above the substrate; at least one oxygen film separating the sub-collector region and the collector region; an emitter region adjacent to the collector region; and a base region adjacent to the emitter region.

公开(公告)号：US20210111247A1

公开(公告)日：2021-04-15

申请号：US16804435

申请日：2020-02-28

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： John J. PEKARIK ,  Vibhor JAIN

IPC: H01L29/10 ,  H01L29/737 ,  H01L29/08 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a heterojunction bipolar transistor and methods of manufacture. The structure includes: a sub-collector region; a collector region above the sub-collector region; an intrinsic base region composed of intrinsic base material located above the collector region; an emitter located above and separated from the intrinsic base material; and a raised extrinsic base having a stepped configuration and separated from and self-aligned to the emitter.

公开(公告)号：US20210091195A1

公开(公告)日：2021-03-25

申请号：US16732755

申请日：2020-01-02

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Judson R. HOLT ,  Vibhor JAIN ,  Qizhi LIU ,  Ramsey HAZBUN ,  Pernell DONGMO ,  John J. PEKARIK ,  Cameron E. LUCE

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/737 ,  H01L29/08

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors and methods of manufacture. The structure includes: a sub-collector region in a substrate; a collector region above the sub-collector region, the collector region composed of semiconductor material; an intrinsic base region composed of intrinsic base material surrounded by the semiconductor material above the collector region; and an emitter region above the intrinsic base region.