公开(公告)号：US20210091195A1

公开(公告)日：2021-03-25

申请号：US16732755

申请日：2020-01-02

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Judson R. HOLT ,  Vibhor JAIN ,  Qizhi LIU ,  Ramsey HAZBUN ,  Pernell DONGMO ,  John J. PEKARIK ,  Cameron E. LUCE

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/737 ,  H01L29/08

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors and methods of manufacture. The structure includes: a sub-collector region in a substrate; a collector region above the sub-collector region, the collector region composed of semiconductor material; an intrinsic base region composed of intrinsic base material surrounded by the semiconductor material above the collector region; and an emitter region above the intrinsic base region.

公开(公告)号：US20210320217A1

公开(公告)日：2021-10-14

申请号：US16844606

申请日：2020-04-09

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Mark D. LEVY ,  Siva P. ADUSUMILLI ,  John J. ELLIS-MONAGHAN ,  Vibhor JAIN ,  Ramsey HAZBUN ,  Pernell DONGMO ,  Cameron E. LUCE ,  Steven M. SHANK ,  Rajendran KRISHNASAMY

IPC: H01L31/107 ,  H01L31/0376 ,  H01L31/028 ,  H01L31/18

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an avalanche photodiode and methods of manufacture. The structure includes: a substrate material having a trench with sidewalls and a bottom composed of the substrate material; a first semiconductor material lining the sidewalls and the bottom of the trench; a photosensitive semiconductor material provided on the first semiconductor material; and a third semiconductor material provided on the photosensitive semiconductor material.