公开(公告)号：US20220091331A1

公开(公告)日：2022-03-24

申请号：US17031032

申请日：2020-09-24

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Yusheng BIAN

IPC: G02B6/124

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to spiral waveguide absorbers and methods of manufacture. The structure includes: a photonics component; and a waveguide absorber with a grating pattern coupled to a node of the photonics component.

公开(公告)号：US20210191044A1

公开(公告)日：2021-06-24

申请号：US17193379

申请日：2021-03-05

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng BIAN ,  Ajey Poovannummoottil JACOB

IPC: G02B6/293 ,  G02B6/35 ,  F21V8/00 ,  G02B6/136

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to non-planar waveguide structures and methods of manufacture. The structure includes: a first waveguide structure; and a non-planar waveguide structure spatially shifted from the first waveguide structure and separated from the first waveguide structure by an insulator material.

公开(公告)号：US20220283375A1

公开(公告)日：2022-09-08

申请号：US17749487

申请日：2022-05-20

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Yusheng BIAN ,  Won Suk LEE ,  Abdelsalam A. ABOKETAF

IPC: G02B6/26 ,  G02B6/122

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to waveguide attenuators and methods of manufacture. The structure includes: a main bus waveguide structure; a first hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a first geometry of material; and a second hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a second geometry of the material.

公开(公告)号：US20220260778A1

公开(公告)日：2022-08-18

申请号：US17738156

申请日：2022-05-06

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Yusheng BIAN

IPC: G02B6/124

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to spiral waveguide absorbers and methods of manufacture. The structure includes: a photonics component; and a waveguide absorber with a grating pattern coupled to a node of the photonics component.

公开(公告)号：US20210365768A1

公开(公告)日：2021-11-25

申请号：US16880253

申请日：2020-05-21

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Akhilesh R. JAISWAL ,  Ajey Poovannummoottil JACOB ,  Yusheng BIAN ,  Michal RAKOWSKI

IPC: G06N3/067 ,  H01L27/144 ,  H01L31/02 ,  H01L31/0232 ,  G06N3/04

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to optical neuro-mimetic devices and methods of manufacture. The structure includes: a plurality of photodetectors and electrical circuitry that converts photocurrent generated from the photodetectors into electrical current and then sums up the electrical current to mimic neural functionality.

公开(公告)号：US20210265519A1

公开(公告)日：2021-08-26

申请号：US16799183

申请日：2020-02-24

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Asif J. CHOWDHURY ,  Ajey Poovannummoottil JACOB ,  Yusheng BIAN ,  Michal RAKOWSKI

IPC: H01L31/107 ,  H01L31/02 ,  H01L31/0232

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodiode structures and methods of manufacture. The structure includes: a charge region having a first doping concentration and a variable width; a multiplication region adjacent to the charge region; and an absorption region adjacent to the variable width charge region.

公开(公告)号：US20210223473A1

公开(公告)日：2021-07-22

申请号：US16749363

申请日：2020-01-22

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Yusheng BIAN ,  Ajey Poovannummoottil JACOB ,  Won Suk LEE

IPC: G02B6/122

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to waveguide absorbers and methods of manufacture. A structure includes: a photonics component; and a vanadate waveguide absorber adjacent to the photonics component