公开(公告)号：US20210396929A1

公开(公告)日：2021-12-23

申请号：US17462491

申请日：2021-08-31

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Yusheng BIAN ,  Ajey Poovannummoottil JACOB ,  Steven M. SHANK

IPC: G02B6/122 ,  G02B6/125 ,  G02B1/00

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture. The structure includes: at least one waveguide structure; and metamaterial structures separated from the at least one waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one waveguide structure.

公开(公告)号：US20210191044A1

公开(公告)日：2021-06-24

申请号：US17193379

申请日：2021-03-05

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng BIAN ,  Ajey Poovannummoottil JACOB

IPC: G02B6/293 ,  G02B6/35 ,  F21V8/00 ,  G02B6/136

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to non-planar waveguide structures and methods of manufacture. The structure includes: a first waveguide structure; and a non-planar waveguide structure spatially shifted from the first waveguide structure and separated from the first waveguide structure by an insulator material.

公开(公告)号：US20210327487A1

公开(公告)日：2021-10-21

申请号：US17365481

申请日：2021-07-01

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Amogh AGRAWAL ,  Ajey Poovannummoottil JACOB ,  Bipul C. PAUL

IPC: G11C11/16

Abstract: The present disclosure relates to a structure including a non-fixed read-cell circuit configured to switch from a first state to a second state based on a state of a memory cell to generate a sensing margin.

公开(公告)号：US20240045140A1

公开(公告)日：2024-02-08

申请号：US18378788

申请日：2023-10-11

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Yusheng BIAN ,  Ajey Poovannummoottil JACOB ,  Steven M. SHANK

IPC: G02B6/122 ,  G02B6/125 ,  G02B1/00

CPC classification number: G02B6/1225 ,  G02B6/125 ,  G02B1/002 ,  G02B1/005 ,  G02B2006/12061

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture. The structure includes: at least one waveguide structure; and metamaterial structures separated from the at least one waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one waveguide structure.

公开(公告)号：US20210365768A1

公开(公告)日：2021-11-25

申请号：US16880253

申请日：2020-05-21

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Akhilesh R. JAISWAL ,  Ajey Poovannummoottil JACOB ,  Yusheng BIAN ,  Michal RAKOWSKI

IPC: G06N3/067 ,  H01L27/144 ,  H01L31/02 ,  H01L31/0232 ,  G06N3/04

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to optical neuro-mimetic devices and methods of manufacture. The structure includes: a plurality of photodetectors and electrical circuitry that converts photocurrent generated from the photodetectors into electrical current and then sums up the electrical current to mimic neural functionality.

公开(公告)号：US20210265519A1

公开(公告)日：2021-08-26

申请号：US16799183

申请日：2020-02-24

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Asif J. CHOWDHURY ,  Ajey Poovannummoottil JACOB ,  Yusheng BIAN ,  Michal RAKOWSKI

IPC: H01L31/107 ,  H01L31/02 ,  H01L31/0232

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodiode structures and methods of manufacture. The structure includes: a charge region having a first doping concentration and a variable width; a multiplication region adjacent to the charge region; and an absorption region adjacent to the variable width charge region.

公开(公告)号：US20210223473A1

公开(公告)日：2021-07-22

申请号：US16749363

申请日：2020-01-22

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Yusheng BIAN ,  Ajey Poovannummoottil JACOB ,  Won Suk LEE

IPC: G02B6/122

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to waveguide absorbers and methods of manufacture. A structure includes: a photonics component; and a vanadate waveguide absorber adjacent to the photonics component