公开(公告)号：US20230199406A1

公开(公告)日：2023-06-22

申请号：US16475506

申请日：2017-03-03

Applicant: Goertek, Inc.

Inventor： Junkai Zhan ,  Jun Li ,  Mengjin Cai

IPC: H04R19/04 ,  H04R7/04 ,  H04R19/00

CPC classification number: H04R19/04 ,  H04R7/04 ,  H04R19/005 ,  H04R2201/003

Abstract: A MEMS microphone is provided, comprising a substrate having a back cavity, and a plate capacitor structure arranged on the substrate, the plate capacitor structure being formed by a vibration diaphragm, a backplate and a support portion; wherein a pressure relief device is provided in the vibration diaphragm, a pressure maintaining channel is formed between the vibration diaphragm and the backplate; and the pressure relief device in the vibration diaphragm constitutes an inlet of the pressure maintaining channel.

公开(公告)号：US20190394574A1

公开(公告)日：2019-12-26

申请号：US16465756

申请日：2017-03-03

Applicant: GOERTEK, INC.

Inventor： JUNKAI ZHAN ,  Jianglong Li ,  Mengjin Cai

IPC: H04R19/04 ,  H04R19/00 ,  H04R1/04 ,  B81B7/00

Abstract: Provided are a MEMS microphone chip and an MEMS microphone. The MEMS microphone chip comprises a substrate, a backplate and a vibration diaphragm, the backplate and the vibration diaphragm constituting two electrodes of a capacitor respectively, the backplate and the vibration diaphragm being suspended above the substrate, the backplate being located between the substrate and the vibration diaphragm, and the substrate being provided with a back chamber and a support column, the support column being connected to a side wall of the back chamber via a connection portion, a through hole or a notch being formed in the connection portion through its thickness direction, to allow spaces at opposite sides of the connection portion to communicate with each other; and the support column being configured to support the backplate.

公开(公告)号：US10349187B2

公开(公告)日：2019-07-09

申请号：US15781364

申请日：2015-12-14

Applicant: Goertek Inc.

Inventor： Junkai Zhan ,  Mengjin Cai ,  Guanxun Qiu ,  Zonglin Zhou ,  Qinglin Song

IPC: H04R19/00 ,  H04R19/04 ,  H04R31/00 ,  B81B7/00 ,  B81C1/00 ,  B81B7/02

Abstract: An acoustic sensor integrated MEMS microphone structure and a fabrication method thereof. A diaphragm (3e) and back-pole (7) which forms a condenser structure are formed on a substrate (1) having at least one recessed slot (1a) on the top. A sensitive electrode is formed on the substrate (1), the sensitive electrode comprising a fixed portion (3b) fixed on the substrate (1) via a sacrificial layer (2), and a bending portion (3a) inserted into the recessed slot (1a), wherein the bending portion and the side wall of the recessed slot form the condenser structure. The integrated structure integrates the condenser structure of the microphone and condenser structure of the acoustic sensor on a substrate (1), thereby increasing the integration level thereof and reducing the overall size of the package. Meanwhile, the microphone diaphragm (3e) and the sensitive electrode of the acoustic sensor can be fabricated on a same substrate (1) at the same time, from the same material, and using the same fabricating process to increase production efficiency.

公开(公告)号：US10246323B2

公开(公告)日：2019-04-02

申请号：US15559407

申请日：2015-12-15

Applicant: Goertek, Inc.

Inventor： Mengjin Cai ,  Qinglin Song

IPC: H01L21/76 ,  B81C1/00

Abstract: A method for forming a cavity of a sensor chip. The method comprises forming a first groove (a2) on a substrate (a1); bonding a covering layer (a4) onto the substrate (a1) to cover the first groove (a2), thereby forming a cavity; and etching the covering layer (a4) to decrease a thickness of the covering layer. The method can implement a thinner thickness of a film, thereby improving the sensitivity of a sensor.

公开(公告)号：US20180086631A1

公开(公告)日：2018-03-29

申请号：US15559407

申请日：2015-12-15

Applicant: Goertek, Inc.

Inventor： Mengjin Cai ,  Qinglin Song

IPC: B81C1/00

CPC classification number: B81C1/00047 ,  B81B2201/0264 ,  B81C1/00079 ,  B81C1/00158 ,  B81C1/00269 ,  B81C1/00555

Abstract: A method for forming a cavity of a sensor chip. The method comprises forming a first groove (a2) on a substrate (a1); bonding a covering layer (a4) onto the substrate (a1) to cover the first groove (a2), thereby forming a cavity; and etching the covering layer (a4) to decrease a thickness of the covering layer. The method can implement a thinner thickness of a film, thereby improving the sensitivity of a sensor.