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    Multi-level transport truck apparatus
    12.
    发明授权
    Multi-level transport truck apparatus 失效
    多层运输卡车装置

    公开(公告)号：US4666211A

    公开(公告)日：1987-05-19

    申请号：US722444

    申请日：1985-04-12

    Applicant: Gavin C. Smith ,  Gregory C. Smith ,  Flynn K. Smith

    Inventor： Gavin C. Smith ,  Gregory C. Smith ,  Flynn K. Smith

    IPC: B60P1/28

    CPC classification number: B60P1/28

    Abstract: A multi-level transport truck apparatus, particularly suitable for use with trucks that release contents through rearward tilting of the container portion, having a main container portion divided into at least upper and lower container portions by plate members insertable within u-shaped channels within the main container and defining seperate container spaces. There is further provided rear door members corresponding to each of the container spaces for selectively dumping the contents of each of the spaces depending if the doors are secured or unsecured. Further, there are identification tags on each door member indicating the contents of each container space, with each tag removeable as the contents of the space is changed.

    Abstract translation: 一种多级运输卡车装置，特别适用于通过容器部分的向后倾斜释放内容物的卡车，其具有通过可插入在U形通道内的板状构件至少分成上部和下部容器部分的主容器部分 主容器和定义单独的容器空间。 进一步提供对应于每个容器空间的后门构件，用于选择性地倾倒每个空间的内容物，这取决于门是固定的还是不安全的。 此外，每个门构件上存在指示每个容器空间的内容的识别标签，每个标签可随着空间的内容而被移除。

    Support post architecture for micromechanical devices
    16.
    发明授权
    Support post architecture for micromechanical devices 失效
    支持微机械设备的后架构

    公开(公告)号：US5703728A

    公开(公告)日：1997-12-30

    申请号：US333195

    申请日：1994-11-02

    Applicant: Gregory C. Smith ,  Robert M. Boysel

    Inventor： Gregory C. Smith ,  Robert M. Boysel

    IPC: B81B3/00 ,  B81C1/00 ,  G02B26/08 ,  G06K15/12 ,  H04N5/74 ,  H04N9/31 ,  G02B7/182 ,  G02B5/08 ,  G02B26/00

    CPC classification number: G06K15/1252 ,  G02B26/0841 ,  Y10S359/904

    Abstract: A support pillar 426 for use with a micromechanical device, particularly a digital micromirror device, comprising a pillar material 422 supported by a substrate 400 and covered with a metal layer 406. The support pillar 426 is fabricated by depositing a layer of pillar material on a substrate 400, patterning the pillar layer to define a support pillar 426, and depositing a metal layer 406 over the support pillar 426 enclosing the support pillar. A planar surface even with the top of the pillar may be created by applying a spacer layer 432 over the pillars 426. After applying the spacer layer 432, the spacer layer 432 is etched to expose the tops of the pillars.

    Abstract translation: 用于微机械装置，特别是数字微镜装置的支撑柱426，其包括由衬底400支撑并被金属层406覆盖的支柱材料422.支撑柱426通过将柱材料层沉积在 衬底400，图案化柱层以限定支撑柱426，以及在包围支撑柱的支撑柱426上沉积金属层406。 可以通过在柱426上施加间隔层432来产生甚至具有柱顶部的平面。在施加间隔层432之后，间隔层432被蚀刻以暴露柱的顶部。

    Support post architecture for micromechanical devices
    17.
    发明授权
    Support post architecture for micromechanical devices 失效
    支持微机械设备的后架构

    公开(公告)号：US5631782A

    公开(公告)日：1997-05-20

    申请号：US474867

    申请日：1995-06-07

    Applicant: Gregory C. Smith ,  Robert M. Boysel

    Inventor： Gregory C. Smith ,  Robert M. Boysel

    IPC: B81B3/00 ,  B81C1/00 ,  G02B26/08 ,  G06K15/12 ,  H04N5/74 ,  H04N9/31 ,  G02B7/182 ,  G02B26/00

    CPC classification number: G06K15/1252 ,  G02B26/0841 ,  Y10S359/904

    Abstract: Support pillar 426 for use with a micromechanical device, particularly a digital micromirror device, comprising a pillar material 422 supported by a substrate 400 and covered with a metal layer 406. The support pillar 426 is fabricated by depositing a layer of pillar material on a substrate 400, patterning the pillar layer to define a support pillar 426, and depositing a metal layer 406 over the support pillar 426 enclosing the support pillar. A planar surface even with the top of the pillar may be created by applying a spacer layer 432 over the pillars 426. After applying the spacer layer 432, the spacer layer 432 is etched to expose the tops of the pillars.

    Abstract translation: 支撑柱426，用于微机械装置，特别是数字微镜装置，其包括由衬底400支撑并被金属层406覆盖的支柱材料422.支撑柱426通过在衬底上沉积柱状材料制成 400，图案化柱层以限定支撑柱426，以及在包围支撑柱的支撑柱426上沉积金属层406。 可以通过在柱426上施加间隔层432来产生甚至具有柱顶部的平面。在施加间隔层432之后，间隔层432被蚀刻以暴露柱的顶部。

    Wafer-like processing after sawing DMDs
    18.
    发明授权
    Wafer-like processing after sawing DMDs 失效
    锯切DMD后的晶圆状加工

    公开(公告)号：US5622900A

    公开(公告)日：1997-04-22

    申请号：US374384

    申请日：1995-01-12

    Applicant: Gregory C. Smith

    Inventor： Gregory C. Smith

    IPC: G02B26/08 ,  H01L21/301 ,  H01L21/302

    CPC classification number: G02B26/08 ,  G02B26/0841 ,  Y10T156/1082

    Abstract: A method of fabricating debris intolerant devices 30, and especially micro-mechanical devices such as DMDs, that allows wafers 22 to be sawn prior to completing all fabrication steps. Some devices are too fragile to allow cleaning operations to be performed after fabrication of the device. A solution is to saw and clean the wafers prior to completing the fabrication steps that make the device fragile. To prevent having to process the chips 30 individually, a substrate wafer 28 is attached to the backside of the dicing tape 24. This substrate wafer holds the sawn chips 30 in alignment allowing the remaining fabrication steps to be performed in wafer form.

    Abstract translation: 制造碎片不耐受装置30，特别是诸如DMD的微机械装置的方法，其允许在完成所有制造步骤之前锯切晶片22。 一些设备太脆弱，不允许在制造设备之后进行清洁操作。 解决方案是在完成使器件易碎的制造步骤之前锯切和清洁晶片。 为了防止必须单独处理芯片30，将衬底晶片28附接到切割带24的背面。该衬底晶片将锯切芯片30保持对准，从而可以以晶片形式执行剩余的制造步骤。

    Method of forming composite interconnect system
    19.
    发明授权
    Method of forming composite interconnect system 失效
    形成复合互连系统的方法

    公开(公告)号：US5231055A

    公开(公告)日：1993-07-27

    申请号：US888777

    申请日：1992-05-26

    Applicant: Gregory C. Smith

    Inventor： Gregory C. Smith

    IPC: H01L21/768 ,  H01L23/522

    CPC classification number: H01L23/5226 ,  H01L21/76879 ,  H01L2924/0002 ,  Y10S148/025

    Abstract: A process for forming a smooth conformal refractory metal film on an insulating layer having a via formed therein. This process provides extremely good planarity and step coverage when used to form contacts in semiconductor circuits and, in addition, offers improved wafer alignment capability as well as enhanced reliability which result from the smooth surface morphology. The process includes forming contact openings through an insulating layer to a semiconductor substrate; depositing a first blanket layer of titanium using deposition conditions that provide a conformal film that exhibits good step coverage at the contact opening; and forming a second blanket layer of titanium using deposition conditions that provide reduced surface asperity height. The process is ideally suited to forming an electrical interconnection system for semiconductor integrated circuit devices such as static or dynamic random access memories and is particularly useful in VLSI devices that incorporate multiple levels of interconnect.

    Abstract translation: 在其中形成有通孔的绝缘层上形成平滑的保形难熔金属膜的方法。 当用于在半导体电路中形成接触时，该工艺提供了非常好的平面度和阶梯覆盖，并且还提供了改进的晶片对准能力以及由光滑的表面形态产生的增强的可靠性。 该工艺包括通过绝缘层形成接触开口到半导体衬底; 使用提供在接触开口处表现出良好的阶梯覆盖的保形膜的沉积条件沉积钛的第一覆盖层; 以及使用提供降低的表面粗糙度高度的沉积条件形成第二层钛层。 该方法非常适用于形成诸如静态或动态随机存取存储器的半导体集成电路器件的电互连系统，并且在并入多级互连的VLSI器件中特别有用。

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