公开(公告)号：US20220123159A1

公开(公告)日：2022-04-21

申请号：US17073152

申请日：2020-10-16

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Zhihong Huang ,  Di Liang ,  Xiaoge Zeng

IPC: H01L31/0232 ,  H01L31/108 ,  H01L27/144 ,  H01L31/18 ,  G02B6/42 ,  G02B6/293 ,  H04B10/25 ,  H04B10/516 ,  H04B10/61

Abstract: Integrated optical filter and photodetectors and methods of fabrication thereof are described herein according to the present disclosure. An example of an integrated optical filter and photodetector described herein includes a substrate, an insulator layer on the substrate, and a semiconductor layer on the insulator layer. An optical filter having a resonant cavity is formed in or on the semiconductor layer. The integrated optical filter and photodetector further includes two first metal fingers and a second metal finger interdigitated between the two first metal fingers on the semiconductor layer forming Schottky barriers. The first metal fingers are constructed from a different metal relative to the second metal finger.

公开(公告)号：US11227967B2

公开(公告)日：2022-01-18

申请号：US16949723

申请日：2020-11-12

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Xiaoge Zeng ,  Zhihong Huang ,  Di Liang

IPC: G01J1/44 ,  H01L31/107 ,  H01L31/18

Abstract: A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The absorbing region may also have a different composition from the amplifying region, allowing further independent optimization of the two functional regions. An insulating layer blocks leakage paths, redirecting photocurrent toward the region(s) of highest avalanche gain. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications.

公开(公告)号：US20210083138A1

公开(公告)日：2021-03-18

申请号：US16949723

申请日：2020-11-12

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Xiaoge Zeng ,  Zhihong Huang ,  Di Liang

IPC: H01L31/107 ,  G01J1/44 ,  H01L31/18

Abstract: A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The absorbing region may also have a different composition from the amplifying region, allowing further independent optimization of the two functional regions. An insulating layer blocks leakage paths, redirecting photocurrent toward the region(s) of highest avalanche gain. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications.

公开(公告)号：US20200274019A1

公开(公告)日：2020-08-27

申请号：US16283224

申请日：2019-02-22

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Xiaoge Zeng ,  Zhihong Huang ,  Di Liang

IPC: H01L31/112 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/02

Abstract: A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The compositions of the absorbing region and the amplifying region may be optimized independently of each other. In the amplifying region, p-doped and n-doped structures are offset from each other both horizontally and vertically. Directly applying a voltage across a controlled region of the photocurrent path increases avalanche gain by shaping the electric field to overlap the photocurrent density. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications.