公开(公告)号：US10897119B1

公开(公告)日：2021-01-19

申请号：US16570830

申请日：2019-09-13

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Geza Kurczveil ,  Di Liang ,  Zhihong Huang ,  Xiaoge Zeng ,  Raymond G. Beausoleil

IPC: H01S3/13 ,  H01S5/0687 ,  H01S5/068 ,  H01S5/026 ,  H01S5/02 ,  H01S5/10 ,  G01J1/04 ,  H01S5/0683 ,  H01S5/06 ,  H04J14/02 ,  H04B10/69 ,  H04B10/079 ,  G01K7/16 ,  G01J5/20 ,  G01J5/08 ,  H04B10/50 ,  H01S5/343

Abstract: Techniques and circuitry for a semiconductor laser with enhanced lasing wavelengths stabilization are described. A semiconductor laser can generate an optical signal (e.g., single or multi-wavelength), for use in a Dense Wavelength Division Multiplexing (DWDM) interconnect system. The stabilization circuitry can include temperature sensor circuitry that measures an operational temperature of the semiconductor laser, and a feedback controller that can determine a temperature-induced wavelength shift that may be experienced by the multi-wavelength optical signal based on the laser's temperature. The feedback controller is also configured to generate a compensation signal that is determined to cause a complimentary shift in the multi-wavelength optical signal, where the complimentary shift can compensate for the temperature-induced wavelength shift. An integrated MOS capacitor of the laser can be charged by the signal in a manner that effectuates the complimentary shift and tunes the multi-wavelength optical signal to compensate for temperature-induced shift, thereby enhancing stabilization.

公开(公告)号：US20200243701A1

公开(公告)日：2020-07-30

申请号：US16260256

申请日：2019-01-29

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Geza Kurczveil ,  Di Liang ,  Bassem Tossoun ,  Chong Zhang ,  Xiaoge Zeng ,  Zhihong Huang ,  Raymond Beausoleil

IPC: H01L31/0352 ,  H01L31/0304 ,  H01L31/107 ,  H01L31/0232

Abstract: A quantum-dot based avalanche photodiode (QD-APD) may include a silicon substrate and a waveguide on which a quantum dot (QD) stack of layers is formed having a QD light absorption layer, a charge multiplication layer (CML), and spacer layers. The QD stack may be formed within a p-n junction. The waveguide may include a mode converter to facilitate optical coupling and light transfer from the waveguide to the QD light absorption layer. The QD absorption layer and the CML layer may be combined or separate layers. The CML may generate electrical current from the absorbed light with more than 100% quantum efficiency when the p-n junction is reverse-biased.

公开(公告)号：US11056603B2

公开(公告)日：2021-07-06

申请号：US16569617

申请日：2019-09-12

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Zhihong Huang ,  Xiaoge Zeng ,  Wayne Victor Sorin

IPC: H01L31/107 ,  G02B6/42 ,  H01L31/02 ,  H01L31/0232

Abstract: Resonant cavity photodetector structures which integrate photodetection and filtering capabilities is described. A resonant cavity photodetector structure generally can comprise a region including a resonator, and an absorption region that can be integrated into a cavity of the resonator. The resonator can perform filtering that is suitable for high-bandwidth optical communications, such as Dense Wavelength Multiplexing (DWDM). In some cases, the resonator is a microring resonator. An absorption region can include a photodiode which performs optical energy detection acting as a photodetector, such as an avalanche photodiode (APD) wherein the photodiode. A coupling distance between the resonator region and the absorption region can be controlled, which allows control of a coupling strength between an optical mode of the resonator and the absorption region such that a quality factor (Q-factor) can be tuned. Thus, by adjusting the Q-factor, the resonant cavity photodetector structure can be tuned to achieve a desirable performance.

公开(公告)号：US20220138371A1

公开(公告)日：2022-05-05

申请号：US17084600

申请日：2020-10-29

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Jinsung Youn ,  Xiaoge Zeng ,  Mir Ashkan Seyedi

IPC: G06F30/20 ,  G06F16/901

Abstract: A method for simulating a photodetector behavior includes: receiving an input waveform for an photodetector; receiving an input optical power and a reverse bias voltage for the photodetector; searching for, in a lookup-table library, model parameters for a photodetector behavior model based on the input optical power and the reverse bias voltage; and outputting a second waveform from the photodetector behavior model, where the second waveform is indicative of an electrical response of the photodetector receiving the input waveform.

公开(公告)号：US10811549B2

公开(公告)日：2020-10-20

申请号：US16260256

申请日：2019-01-29

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Geza Kurczveil ,  Di Liang ,  Bassem Tossoun ,  Chong Zhang ,  Xiaoge Zeng ,  Zhihong Huang ,  Raymond Beausoleil

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/107 ,  H01L31/0304

Abstract: A quantum-dot based avalanche photodiode (QD-APD) may include a silicon substrate and a waveguide on which a quantum dot (QD) stack of layers is formed having a QD light absorption layer, a charge multiplication layer (CML), and spacer layers. The QD stack may be formed within a p-n junction. The waveguide may include a mode converter to facilitate optical coupling and light transfer from the waveguide to the QD light absorption layer. The QD absorption layer and the CML layer may be combined or separate layers. The CML may generate electrical current from the absorbed light with more than 100% quantum efficiency when the p-n junction is reverse-biased.

公开(公告)号：US10797194B2

公开(公告)日：2020-10-06

申请号：US16283224

申请日：2019-02-22

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Xiaoge Zeng ,  Zhihong Huang ,  Di Liang

IPC: H01L31/112 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0224

Abstract: A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The compositions of the absorbing region and the amplifying region may be optimized independently of each other. In the amplifying region, p-doped and n-doped structures are offset from each other both horizontally and vertically. Directly applying a voltage across a controlled region of the photocurrent path increases avalanche gain by shaping the electric field to overlap the photocurrent density. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications.

公开(公告)号：US12094987B2

公开(公告)日：2024-09-17

申请号：US17073152

申请日：2020-10-16

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Zhihong Huang ,  Di Liang ,  Xiaoge Zeng

IPC: H01L31/0232 ,  G02B6/293 ,  G02B6/42 ,  H01L27/144 ,  H01L31/108 ,  H01L31/18 ,  H04B10/25 ,  H04B10/50 ,  H04B10/516 ,  H04B10/67

CPC classification number: H01L31/02327 ,  G02B6/29338 ,  G02B6/4215 ,  H01L27/1446 ,  H01L31/1085 ,  H01L31/1804 ,  H04B10/25 ,  H04B10/516 ,  H04B10/5051 ,  H04B10/506 ,  H04B10/67

Abstract: Integrated optical filter and photodetectors and methods of fabrication thereof are described herein according to the present disclosure. An example of an integrated optical filter and photodetector described herein includes a substrate, an insulator layer on the substrate, and a semiconductor layer on the insulator layer. An optical filter having a resonant cavity is formed in or on the semiconductor layer. The integrated optical filter and photodetector further includes two first metal fingers and a second metal finger interdigitated between the two first metal fingers on the semiconductor layer forming Schottky barriers. The first metal fingers are constructed from a different metal relative to the second metal finger.

公开(公告)号：US11502215B2

公开(公告)日：2022-11-15

申请号：US17249192

申请日：2021-02-23

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Di Liang ,  Xiaoge Zeng ,  Zhihong Huang

IPC: H01L31/107 ,  H01L31/02 ,  H01L31/0336

Abstract: Examples described herein relate to an avalanche photodiode (APD) and an optical receiver including the APD. The APD may include a substrate and a photon absorption region disposed on the substrate. The substrate may include a charge carrier acceleration region under the photon absorption region; a charge region adjacent to the charge carrier acceleration region; and a charge carrier multiplication region adjacent to the charge region. The charge carrier acceleration region, the charge region, and the charge carrier multiplication region are laterally formed in the substrate. When a biasing voltage is applied to the optoelectronic device, photon-generated free charge carriers may be generated in the photon absorption region and are diffused into the charge carrier acceleration region. The charge carrier acceleration region is configured to accelerate the photon-generated free charge carriers prior to the photon-generated free charge carriers entering into the charge region and undergoing impact ionization in the charge carrier multiplication region.

公开(公告)号：US10854768B2

公开(公告)日：2020-12-01

申请号：US16226753

申请日：2018-12-20

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Xiaoge Zeng ,  Zhihong Huang ,  Di Liang

IPC: H01L31/107 ,  G01J1/44 ,  H01L31/18

Abstract: A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The absorbing region may also have a different composition from the amplifying region, allowing further independent optimization of the two functional regions. An insulating layer blocks leakage paths, redirecting photocurrent toward the region(s) of highest avalanche gain. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications.

公开(公告)号：US20220271186A1

公开(公告)日：2022-08-25

申请号：US17249192

申请日：2021-02-23

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Di Liang ,  Xiaoge Zeng ,  Zhihong Huang

IPC: H01L31/107 ,  H01L31/0336 ,  H01L31/02

Abstract: Examples described herein relate to an avalanche photodiode (APD) and an optical receiver including the APD. The APD may include a substrate and a photon absorption region disposed on the substrate. The substrate may include a charge carrier acceleration region under the photon absorption region; a charge region adjacent to the charge carrier acceleration region; and a charge carrier multiplication region adjacent to the charge region. The charge carrier acceleration region, the charge region, and the charge carrier multiplication region are laterally formed in the substrate. When a biasing voltage is applied to the optoelectronic device, photon-generated free charge carriers may be generated in the photon absorption region and are diffused into the charge carrier acceleration region. The charge carrier acceleration region is configured to accelerate the photon-generated free charge carriers prior to the photon-generated free charge carriers entering into the charge region and undergoing impact ionization in the charge carrier multiplication region.