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    OPTICAL DEVICE HAVING A MACH-ZEHNDER INTERFEROMETER WITH IMPROVED LINEARITY
    1.
    发明公开
    OPTICAL DEVICE HAVING A MACH-ZEHNDER INTERFEROMETER WITH IMPROVED LINEARITY 审中-公开

    公开(公告)号：US20240184180A1

    公开(公告)日：2024-06-06

    申请号：US18060903

    申请日：2022-12-01

    Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

    Inventor： Yuan Yuan ,  Stanley Cheung ,  Yiwei Peng ,  Zhihong Huang ,  Marco Fiorentino

    IPC: G02F1/225 ,  G02F1/21

    CPC classification number: G02F1/225 ,  G02F1/212 ,  G02F2203/50

    Abstract: Example optical devices having a Mach-Zehnder interferometer (MZI) with improved linearity are presented. An example optical device may include an MZI and a microring resonator (MRR) optically coupled to any one of a first optical waveguide arm or a second optical waveguide arm, where the MRR is operable in a resonance state and in an off-resonance state during operation of the optical device. The MZI includes a length difference between the first optical waveguide arm and the second optical waveguide arm thereby achieving a quarter-period phase delay between optical signals of the first optical waveguide arm and the second optical waveguide arm such that a superlinear transmission region of the microring resonator is aligned with peaks of an optical output of the MZI improving linearity of the optical output of the MZI.

    PARITY TIME SYMMETRIC DIRECTIONAL COUPLERS WITH PHASE TUNING
    2.
    发明公开
    PARITY TIME SYMMETRIC DIRECTIONAL COUPLERS WITH PHASE TUNING 审中-公开

    公开(公告)号：US20230408852A1

    公开(公告)日：2023-12-21

    申请号：US17843352

    申请日：2022-06-17

    Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

    Inventor： Stanley Cheung ,  Geza Kurczveil ,  Yuan Yuan ,  Xian Xiao ,  Raymond G. Beausoleil

    IPC: G02F1/017

    CPC classification number: G02F1/01708

    Abstract: Implementations disclosed herein provide for devices and methods for obtaining parity time (PT) symmetric directional couplers through improved phase tuning, along with separate optical gain and optical loss tuning. The present disclosure integrates phase tuning and optical gain/loss tuning structures into waveguides of directional couplers disclosed herein. In some examples, directional couplers disclosed herein integrate one or more hybrid metal-oxide-semiconductor capacitors (MOSCAPs) formed by a dielectric layer between two semiconductor layers that provide for phase tuning via plasma dispersion and/or carrier accumulation depending on voltage bias polarity, and one or more optically active medium that provide for optical gain or loss tuning depending on voltage bias polarity.

    OPTICAL DEVICE HAVING WAVEGUIDE INTEGRATED MODULATOR AND LIGHT MONITORING AVALANCHE PHOTODIODE
    3.
    发明公开
    OPTICAL DEVICE HAVING WAVEGUIDE INTEGRATED MODULATOR AND LIGHT MONITORING AVALANCHE PHOTODIODE 审中-公开

    公开(公告)号：US20230228943A1

    公开(公告)日：2023-07-20

    申请号：US17648250

    申请日：2022-01-18

    Applicant: Hewlett Packard Enterprise Development LP

    Inventor： Yuan Yuan ,  Di Liang

    IPC: G02B6/293 ,  G02B6/12 ,  H01L31/107

    CPC classification number: G02B6/2934 ,  G02B6/12019 ,  H01L31/107

    Abstract: Examples described herein relate to an optical device, such as, a ring resonator, that includes a ring waveguide. The ring resonator includes a ring waveguide to allow passage of light therethrough. Further, the ring resonator includes a modulator formed along a first section of the circumference of the ring waveguide to modulate the light inside the ring waveguide based on an application of a first reverse bias voltage to the modulator. Moreover, the ring resonator includes an avalanche photodiode (APD) isolated from the modulator and formed along a second section of the circumference of the ring waveguide to detect the intensity of the light inside the ring waveguide based on an application of a second reverse bias voltage to the APD. The second section is shorter than the first section, and the second reverse bias voltage is higher than the first reverse bias voltage.

    Temperature insensitive optical receiver
    4.
    发明授权
    Temperature insensitive optical receiver 有权

    公开(公告)号：US11637214B2

    公开(公告)日：2023-04-25

    申请号：US17664462

    申请日：2022-05-23

    Applicant: Hewlett Packard Enterprise Development LP

    Inventor： Zhihong Huang ,  Di Liang ,  Yuan Yuan

    IPC: H01L21/20 ,  H01L29/861 ,  H01L31/105 ,  H01L31/028 ,  H04B10/66 ,  H01L27/144 ,  H01L31/18 ,  H04J14/02

    Abstract: A device may include: a highly doped n+ Si region; an intrinsic silicon multiplication region disposed on at least a portion of the n+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped p− Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p− Si charge region having a thickness of about 40-60 nm; and a p+ Ge absorption region disposed on at least a portion of the p− Si charge region; wherein the p+ Ge absorption region is doped across its entire thickness. The thickness of the n+ Si region may be about 100 nm and the thickness of the p− Si charge region may be about 50 nm. The p+ Ge absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/°C.

    TEMPERATURE INSENSITIVE OPTICAL RECEIVER
    5.
    发明申请
    TEMPERATURE INSENSITIVE OPTICAL RECEIVER 有权

    公开(公告)号：US20230057021A1

    公开(公告)日：2023-02-23

    申请号：US17664462

    申请日：2022-05-23

    Applicant: Hewlett Packard Enterprise Development LP

    Inventor： Zhihong Huang ,  Di Liang ,  Yuan Yuan

    IPC: H01L31/105 ,  H01L31/028 ,  H04B10/66 ,  H01L27/144 ,  H01L31/18

    Abstract: A device may include: a highly doped n+ Si region; an intrinsic silicon multiplication region disposed on at least a portion of the n+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped p− Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p− Si charge region having a thickness of about 40-60 nm; and a p+ Ge absorption region disposed on at least a portion of the p− Si charge region; wherein the p+ Ge absorption region is doped across its entire thickness. The thickness of the n+ Si region may be about 100 nm and the thickness of the p− Si charge region may be about 50 nm. The p+ Ge absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/° C.

    RESONATORS-BASED PROGRAMMABLE OPTICAL NEURAL NETWORKS
    8.
    发明申请
    RESONATORS-BASED PROGRAMMABLE OPTICAL NEURAL NETWORKS 有权

    公开(公告)号：US20250021809A1

    公开(公告)日：2025-01-16

    申请号：US18487452

    申请日：2023-10-16

    Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

    Inventor： YIWEI PENG ,  Xian Xiao ,  Yuan Yuan ,  Stanley Cheung ,  Sean Hooten ,  Thomas Van Vaerenbergh ,  Marco Fiorentino ,  Zhihong Huang

    IPC: G06N3/067

    Abstract: Systems and methods are provided for devices and methods for implementing an optical neural network (ONN) by leveraging resonator structures, such on micro-ring resonators (MRRs). Examples include unit cells configured to perform a linear transformation on optical signals. Each unit cell comprises a plurality of signal mixing components optically coupled to between adjacent waveguides, where each signal mixing component corresponds to a distinct wavelength and is configured to mix optical signals on the adjacent waveguides at the distinct wavelength. Each unit cell also includes a plurality of phase tuning components each corresponding to a distinct wavelength and configured to adjust a phase of a mixed optical signal at the distinct wavelength.

    Parity time symmetric directional couplers with phase tuning
    10.
    发明授权
    Parity time symmetric directional couplers with phase tuning 有权

    公开(公告)号：US11953766B2

    公开(公告)日：2024-04-09

    申请号：US17843352

    申请日：2022-06-17

    Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

    Inventor： Stanley Cheung ,  Geza Kurczveil ,  Yuan Yuan ,  Xian Xiao ,  Raymond G. Beausoleil

    IPC: G02F1/017

    CPC classification number: G02F1/01708

    Abstract: Implementations disclosed herein provide for devices and methods for obtaining parity time (PT) symmetric directional couplers through improved phase tuning, along with separate optical gain and optical loss tuning. The present disclosure integrates phase tuning and optical gain/loss tuning structures into waveguides of directional couplers disclosed herein. In some examples, directional couplers disclosed herein integrate one or more hybrid metal-oxide-semiconductor capacitors (MOSCAPs) formed by a dielectric layer between two semiconductor layers that provide for phase tuning via plasma dispersion and/or carrier accumulation depending on voltage bias polarity, and one or more optically active medium that provide for optical gain or loss tuning depending on voltage bias polarity.

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