公开(公告)号：US20220102226A1

公开(公告)日：2022-03-31

申请号：US17038024

申请日：2020-09-30

Applicant: Hitachi High-Tech Corporation

Inventor： Kousuke Fukuchi ,  Ryoji Asakura ,  Soichiro Eto ,  Tsubasa Okamoto ,  Tatehito Usui ,  Shigeru Nakamoto

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/3213 ,  H01J37/32

Abstract: A plasma processing apparatus including a processing state detection unit having: a light emission detection unit to detect light emission of the plasma; a calculation unit to obtain a differential waveform data of the light emission of the plasma; a database unit that stores a plurality of pieces of differential waveform pattern data in advance; a film thickness calculation unit to calculate an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained by the calculation unit and the plurality of pieces of differential waveform pattern data stored in the database unit; and an end point determination unit to determine an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated by the film thickness calculation unit.