公开(公告)号：US11437289B2

公开(公告)日：2022-09-06

申请号：US17038024

申请日：2020-09-30

Applicant: Hitachi High-Tech Corporation

Inventor： Kousuke Fukuchi ,  Ryoji Asakura ,  Soichiro Eto ,  Tsubasa Okamoto ,  Tatehito Usui ,  Shigeru Nakamoto

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/3213 ,  H01J37/32

Abstract: A plasma processing apparatus including a processing state detection unit having: a light emission detection unit to detect light emission of the plasma; a calculation unit to obtain a differential waveform data of the light emission of the plasma; a database unit that stores a plurality of pieces of differential waveform pattern data in advance; a film thickness calculation unit to calculate an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained by the calculation unit and the plurality of pieces of differential waveform pattern data stored in the database unit; and an end point determination unit to determine an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated by the film thickness calculation unit.

公开(公告)号：US20220102226A1

公开(公告)日：2022-03-31

申请号：US17038024

申请日：2020-09-30

Applicant: Hitachi High-Tech Corporation

Inventor： Kousuke Fukuchi ,  Ryoji Asakura ,  Soichiro Eto ,  Tsubasa Okamoto ,  Tatehito Usui ,  Shigeru Nakamoto

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/3213 ,  H01J37/32

Abstract: A plasma processing apparatus including a processing state detection unit having: a light emission detection unit to detect light emission of the plasma; a calculation unit to obtain a differential waveform data of the light emission of the plasma; a database unit that stores a plurality of pieces of differential waveform pattern data in advance; a film thickness calculation unit to calculate an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained by the calculation unit and the plurality of pieces of differential waveform pattern data stored in the database unit; and an end point determination unit to determine an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated by the film thickness calculation unit.

公开(公告)号：US20220367298A1

公开(公告)日：2022-11-17

申请号：US17878176

申请日：2022-08-01

Applicant: Hitachi High-Tech Corporation

Inventor： Kousuke Fukuchi ,  Ryoji Asakura ,  Soichiro Eto ,  Tsubasa Okamoto ,  Tatehito Usui ,  Shigeru Nakamoto

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/3213 ,  H01J37/32

Abstract: A plasma processing method to detect and process a thickness of the processing target film with high accuracy when a fine shape of the semiconductor wafer surface varies, including detecting a state of a processing target film of a processing target material that is processed inside a vacuum processing chamber; detecing light emission of the plasma; obtaining a differential waveform data of the light emission of the plasma; storing a plurality of pieces of differential waveform pattern data in advance; calculating an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained and the plurality of pieces of differential waveform pattern data stored; and determining an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated.

公开(公告)号：US12014909B2

公开(公告)日：2024-06-18

申请号：US16950179

申请日：2020-11-17

Applicant: Hitachi High-Tech Corporation

Inventor： Ryoji Asakura ,  Shota Umeda ,  Daisuke Shiraishi ,  Akira Kagoshima ,  Satomi Inoue

IPC: H01J37/32 ,  G01J3/443 ,  H01L21/67

CPC classification number: H01J37/32926 ,  G01J3/443 ,  H01L21/67069 ,  H01L21/67253 ,  H01J2237/334

Abstract: The plasma processing apparatus includes a plasma processing unit that performs plasma processing of a sample and a control unit that controls the plasma processing. The control unit selects one of a plurality of the prediction models for predicting a result of the plasma processing based on a state of the plasma processing unit, and predicts the result of the plasma processing by using a selected prediction model.

公开(公告)号：US10734207B2

公开(公告)日：2020-08-04

申请号：US15445203

申请日：2017-02-28

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Ryoji Asakura ,  Daisuke Shiraishi ,  Akira Kagoshima ,  Satomi Inoue

IPC: H01J37/32 ,  G01J3/28 ,  G01J3/02 ,  G01J3/443

Abstract: According to the present invention, a plasma processing apparatus includes an analysis unit that obtains wavelengths of the light correlated with a plasma processing result, selects, from the obtained wavelengths, a wavelength having a first factor that represents a deviation in an intensity distribution of the light and is larger than a first predetermined value, and predicts the plasma processing result using the selected wavelength, or an analysis unit that obtains values computed using each of light intensities of a plurality of wavelengths and correlated with the plasma processing result, selects, from the obtained values, a value having a second factor that represents a deviation in a distribution of the obtained values and is larger than a second predetermined value, and predicts the plasma processing result using the selected value.

公开(公告)号：US12131964B2

公开(公告)日：2024-10-29

申请号：US17878176

申请日：2022-08-01

Applicant: Hitachi High-Tech Corporation

Inventor： Kousuke Fukuchi ,  Ryoji Asakura ,  Soichiro Eto ,  Tsubasa Okamoto ,  Tatehito Usui ,  Shigeru Nakamoto

IPC: H01L21/66 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/67

CPC classification number: H01L22/26 ,  H01J37/32834 ,  H01J37/32963 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/67069 ,  H01L21/67253 ,  H01J2237/334

Abstract: A plasma processing method to detect and process a thickness of the processing target film with high accuracy when a fine shape of the semiconductor wafer surface varies, including detecting a state of a processing target film of a processing target material that is processed inside a vacuum processing chamber; detecting light emission of the plasma; obtaining a differential waveform data of the light emission of the plasma; storing a plurality of pieces of differential waveform pattern data in advance; calculating an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained and the plurality of pieces of differential waveform pattern data stored; and determining an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated.

公开(公告)号：US12062530B2

公开(公告)日：2024-08-13

申请号：US16911584

申请日：2020-06-25

Applicant: Hitachi High-Tech Corporation

Inventor： Yusuke Yoshida ,  Shigeru Nakamoto ,  Kosuke Fukuchi ,  Ryoji Asakura

IPC: H01J37/32 ,  G01B11/06 ,  H01J37/18

CPC classification number: H01J37/32972 ,  G01B11/06 ,  G01B11/0625 ,  G01B11/0683 ,  H01J37/18

Abstract: A vacuum processing apparatus includes a processing unit comprising a processing chamber disposed in a vacuum container, a detector detecting a thickness of the target film on a wafer or an end point during the processing of the wafer using a light from the wafer, the detector being functioned to detect the thickness or the end point by comparing a data pattern of obtained in advance indicating light intensities of a plurality of wavelengths related to the film thickness using the wavelength as a parameter and a real data pattern indicating the light intensities of the plurality of wavelengths obtained at a particular time during the processing, and the data pattern being obtained by dividing differential coefficient value of time-series data of the light intensities of the plurality of wavelengths by time-series data indicating values of the light intensities of the plurality of wavelengths.

公开(公告)号：US12051575B2

公开(公告)日：2024-07-30

申请号：US17482595

申请日：2021-09-23

Applicant: Hitachi High-Tech Corporation

Inventor： Tsubasa Okamoto ,  Ryoji Asakura ,  Soichiro Eto

IPC: H01L21/66 ,  G01B11/06 ,  H01J37/32

CPC classification number: H01J37/32963 ,  G01B11/0675 ,  H01L22/26 ,  H01J2237/24585 ,  H01J2237/332

Abstract: Provided is a processing state detection unit includes: a light emission detection unit configured to detect light emission of the plasma; a calculation unit configured to obtain a differential waveform data of the light emission of the plasma; a database unit that stores a plurality of pieces of differential waveform pattern data in advance; a film thickness calculation unit configured to calculate an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained by the calculation unit and the plurality of pieces of differential waveform pattern data stored in the database unit; and an end point determination unit configured to determine an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated by the film thickness calculation unit.

公开(公告)号：US20210074528A1

公开(公告)日：2021-03-11

申请号：US16950179

申请日：2020-11-17

Applicant: Hitachi High-Tech Corporation

Inventor： Ryoji Asakura ,  Shota Umeda ,  Daisuke Shiraishi ,  Akira Kagoshima ,  Satomi Inoue

IPC: H01J37/32 ,  H01L21/67 ,  G01J3/443

Abstract: The plasma processing apparatus includes a plasma processing unit that performs plasma processing of a sample and a control unit that controls the plasma processing. The control unit selects one of a plurality of the prediction models for predicting a result of the plasma processing based on a state of the plasma processing unit, and predicts the result of the plasma processing by using a selected prediction model.

公开(公告)号：US20220328286A1

公开(公告)日：2022-10-13

申请号：US17851191

申请日：2022-06-28

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Ryoji Asakura ,  Kenji Tamaki ,  Akira Kagoshima ,  Daisuke Shiraishi

IPC: H01J37/32

Abstract: There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.