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公开(公告)号：US12131964B2
公开(公告)日：2024-10-29
申请号：US17878176
申请日：2022-08-01
Applicant: Hitachi High-Tech Corporation
Inventor： Kousuke Fukuchi , Ryoji Asakura , Soichiro Eto , Tsubasa Okamoto , Tatehito Usui , Shigeru Nakamoto
IPC: H01L21/66 , H01J37/32 , H01L21/3213 , H01L21/67
CPC classification number: H01L22/26 , H01J37/32834 , H01J37/32963 , H01L21/32137 , H01L21/32139 , H01L21/67069 , H01L21/67253 , H01J2237/334
Abstract: A plasma processing method to detect and process a thickness of the processing target film with high accuracy when a fine shape of the semiconductor wafer surface varies, including detecting a state of a processing target film of a processing target material that is processed inside a vacuum processing chamber; detecting light emission of the plasma; obtaining a differential waveform data of the light emission of the plasma; storing a plurality of pieces of differential waveform pattern data in advance; calculating an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained and the plurality of pieces of differential waveform pattern data stored; and determining an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated.
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公开(公告)号：US12051575B2
公开(公告)日：2024-07-30
申请号：US17482595
申请日：2021-09-23
Applicant: Hitachi High-Tech Corporation
Inventor： Tsubasa Okamoto , Ryoji Asakura , Soichiro Eto
CPC classification number: H01J37/32963 , G01B11/0675 , H01L22/26 , H01J2237/24585 , H01J2237/332
Abstract: Provided is a processing state detection unit includes: a light emission detection unit configured to detect light emission of the plasma; a calculation unit configured to obtain a differential waveform data of the light emission of the plasma; a database unit that stores a plurality of pieces of differential waveform pattern data in advance; a film thickness calculation unit configured to calculate an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained by the calculation unit and the plurality of pieces of differential waveform pattern data stored in the database unit; and an end point determination unit configured to determine an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated by the film thickness calculation unit.
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公开(公告)号：US20230118576A1
公开(公告)日：2023-04-20
申请号：US16978911
申请日：2019-12-20
Applicant: Hitachi High-Tech Corporation
Inventor： Hiroyuki Kobayashi , Atsushi Sekiguchi , Tatehito Usui , Soichiro Eto , Shigeru Nakamoto , Kazunori Shinoda , Nobuya Miyoshi
Abstract: This invention provides a wafer processing method comprising a process of irradiating a wafer to be processed placed on the upper surface of a sample table arranged in a processing chamber with light or electromagnetic waves to heat and remove a compound layer of a film layer that is preliminarily formed on the upper surface of the film layer of the upper surface of the wafer, wherein in the process, by receiving the light or electromagnetic waves reflected by the upper surface of the wafer, a signal indicating a temporal change in intensity using the wavelength of the light or electromagnetic waves as a parameter is corrected using information of the intensity of the light or electromagnetic waves detected by receiving the light or electromagnetic waves at a position on the circumferential side of the upper surface of the sample table.
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公开(公告)号：US20220367298A1
公开(公告)日：2022-11-17
申请号：US17878176
申请日：2022-08-01
Applicant: Hitachi High-Tech Corporation
Inventor： Kousuke Fukuchi , Ryoji Asakura , Soichiro Eto , Tsubasa Okamoto , Tatehito Usui , Shigeru Nakamoto
IPC: H01L21/66 , H01L21/67 , H01L21/3213 , H01J37/32
Abstract: A plasma processing method to detect and process a thickness of the processing target film with high accuracy when a fine shape of the semiconductor wafer surface varies, including detecting a state of a processing target film of a processing target material that is processed inside a vacuum processing chamber; detecing light emission of the plasma; obtaining a differential waveform data of the light emission of the plasma; storing a plurality of pieces of differential waveform pattern data in advance; calculating an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained and the plurality of pieces of differential waveform pattern data stored; and determining an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated.
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公开(公告)号：US20220406667A1
公开(公告)日：2022-12-22
申请号：US17279810
申请日：2020-03-11
Applicant: Hitachi High-Tech Corporation
Inventor： Soichiro Eto
IPC: H01L21/66 , H01J37/22 , H01J37/244 , G01B11/06
Abstract: A plasma processing apparatus and method with an improved processing yield, the plasma processing apparatus including detector configured to detect an intensity of a first light of a plurality of wavelengths in a first wavelength range and an intensity of a second light of a plurality of wavelengths in a second wavelength range, the first light being obtained by receiving a light which is emitted into the processing chamber from a light source disposed outside the processing chamber and which is reflected by an upper surface of the wafer, and the second light being a light transmitted from the light source without passing through the processing chamber; and a determination unit configured to determine a remaining film thickness of the film layer by comparing the intensity of the first light corrected using a change rate of the intensity of the second light.
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Patent Agency Ranking
公开(公告)号：US12051574B2
公开(公告)日：2024-07-30
申请号：US16978911
申请日：2019-12-20
Applicant: Hitachi High-Tech Corporation
Inventor： Hiroyuki Kobayashi , Atsushi Sekiguchi , Tatehito Usui , Soichiro Eto , Shigeru Nakamoto , Kazunori Shinoda , Nobuya Miyoshi
CPC classification number: H01J37/32963 , H01J37/3244 , H01J37/32651 , H01L22/26 , H01J2237/24507 , H01J2237/334
Abstract: This invention provides a wafer processing method comprising a process of irradiating a wafer to be processed placed on the upper surface of a sample table arranged in a processing chamber with light or electromagnetic waves to heat and remove a compound layer of a film layer that is preliminarily formed on the upper surface of the film layer of the upper surface of the wafer, wherein in the process, by receiving the light or electromagnetic waves reflected by the upper surface of the wafer, a signal indicating a temporal change in intensity using the wavelength of the light or electromagnetic waves as a parameter is corrected using information of the intensity of the light or electromagnetic waves detected by receiving the light or electromagnetic waves at a position on the circumferential side of the upper surface of the sample table.
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公开(公告)号：US20220102122A1
公开(公告)日：2022-03-31
申请号：US17482595
申请日：2021-09-23
Applicant: Hitachi High-Tech Corporation
Inventor： Tsubasa Okamoto , Ryoji Asakura , Soichiro Eto
Abstract: Provided is a processing state detection unit includes: a light emission detection unit configured to detect light emission of the plasma; a calculation unit configured to obtain a differential waveform data of the light emission of the plasma; a database unit that stores a plurality of pieces of differential waveform pattern data in advance; a film thickness calculation unit configured to calculate an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained by the calculation unit and the plurality of pieces of differential waveform pattern data stored in the database unit; and an end point determination unit configured to determine an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated by the film thickness calculation unit.
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公开(公告)号：US12074076B2
公开(公告)日：2024-08-27
申请号：US17279810
申请日：2020-03-11
Applicant: Hitachi High-Tech Corporation
Inventor： Soichiro Eto
IPC: H01L21/66 , G01B11/06 , H01J37/22 , H01J37/244 , H01J37/32 , H01L21/3065 , H01L21/67
CPC classification number: H01L22/26 , G01B11/06 , G01B11/0625 , G01B11/0633 , G01B11/0666 , G01B11/0683 , H01J37/22 , H01J37/244 , H01J37/32082 , H01J37/32917 , H01J37/32926 , H01J37/32963 , H01J37/32972 , H01L21/3065 , H01L21/67253 , H01L22/12 , H01J2237/2445 , H01J2237/24578 , H01J2237/3343
Abstract: A plasma processing apparatus and method with an improved processing yield, the plasma processing apparatus including detector configured to detect an intensity of a first light of a plurality of wavelengths in a first wavelength range and an intensity of a second light of a plurality of wavelengths in a second wavelength range, the first light being obtained by receiving a light which is emitted into the processing chamber from a light source disposed outside the processing chamber and which is reflected by an upper surface of the wafer, and the second light being a light transmitted from the light source without passing through the processing chamber; and a determination unit configured to determine a remaining film thickness of the film layer by comparing the intensity of the first light corrected using a change rate of the intensity of the second light.
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公开(公告)号：US20230215710A1
公开(公告)日：2023-07-06
申请号：US17440110
申请日：2020-09-17
Applicant: Hitachi High-Tech Corporation
Inventor： Mitsuru Nagasawa , Soichiro Eto , Tatehito Usui , Shigeru Nakamoto
IPC: H01J37/32 , H01L21/3213 , H01L21/66 , G01B11/06
CPC classification number: H01J37/32972 , G01B11/06 , H01J37/32743 , H01L21/32136 , H01L22/26 , H01J2237/334 , H01J2237/24578
Abstract: A process of detecting a thickness of a film layer to be processed or a depth of etching by using a result of detection of a signal indicating intensity of interference light having a plurality of wavelengths formed at a plurality of time instants from when plasma is formed to when the etching is completed. A start time instant is detected by using an amount of change in the intensity of the interference light. Then, a remaining film thickness or the etching amount at an arbitrary time instant is detected from a result of comparing actual data indicating the intensity of the interference light at the arbitrary time instant during the processing after the start time instant with a plurality of pieces of data for detection of the intensity of the interference light obtained in advance and associated with values of a the film thicknesses or the depths of etching.
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公开(公告)号：US11437289B2
公开(公告)日：2022-09-06
申请号：US17038024
申请日：2020-09-30
Applicant: Hitachi High-Tech Corporation
Inventor： Kousuke Fukuchi , Ryoji Asakura , Soichiro Eto , Tsubasa Okamoto , Tatehito Usui , Shigeru Nakamoto
IPC: H01L21/66 , H01L21/67 , H01L21/3213 , H01J37/32
Abstract: A plasma processing apparatus including a processing state detection unit having: a light emission detection unit to detect light emission of the plasma; a calculation unit to obtain a differential waveform data of the light emission of the plasma; a database unit that stores a plurality of pieces of differential waveform pattern data in advance; a film thickness calculation unit to calculate an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained by the calculation unit and the plurality of pieces of differential waveform pattern data stored in the database unit; and an end point determination unit to determine an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated by the film thickness calculation unit.
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