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公开(公告)号：US20230118576A1
公开(公告)日：2023-04-20
申请号：US16978911
申请日：2019-12-20
发明人： Hiroyuki Kobayashi , Atsushi Sekiguchi , Tatehito Usui , Soichiro Eto , Shigeru Nakamoto , Kazunori Shinoda , Nobuya Miyoshi
摘要： This invention provides a wafer processing method comprising a process of irradiating a wafer to be processed placed on the upper surface of a sample table arranged in a processing chamber with light or electromagnetic waves to heat and remove a compound layer of a film layer that is preliminarily formed on the upper surface of the film layer of the upper surface of the wafer, wherein in the process, by receiving the light or electromagnetic waves reflected by the upper surface of the wafer, a signal indicating a temporal change in intensity using the wavelength of the light or electromagnetic waves as a parameter is corrected using information of the intensity of the light or electromagnetic waves detected by receiving the light or electromagnetic waves at a position on the circumferential side of the upper surface of the sample table.
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公开(公告)号：US20220367298A1
公开(公告)日：2022-11-17
申请号：US17878176
申请日：2022-08-01
发明人： Kousuke Fukuchi , Ryoji Asakura , Soichiro Eto , Tsubasa Okamoto , Tatehito Usui , Shigeru Nakamoto
IPC分类号： H01L21/66 , H01L21/67 , H01L21/3213 , H01J37/32
摘要： A plasma processing method to detect and process a thickness of the processing target film with high accuracy when a fine shape of the semiconductor wafer surface varies, including detecting a state of a processing target film of a processing target material that is processed inside a vacuum processing chamber; detecing light emission of the plasma; obtaining a differential waveform data of the light emission of the plasma; storing a plurality of pieces of differential waveform pattern data in advance; calculating an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained and the plurality of pieces of differential waveform pattern data stored; and determining an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated.
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公开(公告)号：US11308182B2
公开(公告)日：2022-04-19
申请号：US16996486
申请日：2020-08-18
摘要： The present invention is a data processing apparatus including a data input/output device for receiving data, a storage for storing the data received by the data input/output device, a data processing program storage for storing a data processing program that includes the steps of calculating, using a double exponential smoothing method, a first predicted value that is a predicted value of smoothed data and a second predicted value that is a predicted value of the gradient of the smoothed data, and calculating, using a double exponential smoothing method in which the second predicted value is set as input data, a third predicted value that is a predicted value of smoothed data and a fourth predicted value that is a predicted value of the gradient of the smoothed data, and a data calculation processing apparatus for performing the data processing under the data processing program.
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公开(公告)号：US12051574B2
公开(公告)日：2024-07-30
申请号：US16978911
申请日：2019-12-20
发明人： Hiroyuki Kobayashi , Atsushi Sekiguchi , Tatehito Usui , Soichiro Eto , Shigeru Nakamoto , Kazunori Shinoda , Nobuya Miyoshi
CPC分类号： H01J37/32963 , H01J37/3244 , H01J37/32651 , H01L22/26 , H01J2237/24507 , H01J2237/334
摘要： This invention provides a wafer processing method comprising a process of irradiating a wafer to be processed placed on the upper surface of a sample table arranged in a processing chamber with light or electromagnetic waves to heat and remove a compound layer of a film layer that is preliminarily formed on the upper surface of the film layer of the upper surface of the wafer, wherein in the process, by receiving the light or electromagnetic waves reflected by the upper surface of the wafer, a signal indicating a temporal change in intensity using the wavelength of the light or electromagnetic waves as a parameter is corrected using information of the intensity of the light or electromagnetic waves detected by receiving the light or electromagnetic waves at a position on the circumferential side of the upper surface of the sample table.
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公开(公告)号：US20210407776A1
公开(公告)日：2021-12-30
申请号：US16911584
申请日：2020-06-25
摘要： A vacuum processing apparatus includes a processing unit comprising a processing chamber disposed in a vacuum container, a detector detecting a thickness of the target film on a wafer or an end point during the processing of the wafer using a light from the wafer, the detector being functioned to detect the thickness or the end point by comparing a data pattern of obtained in advance indicating light intensities of a plurality of wavelengths related to the film thickness using the wavelength as a parameter and a real data pattern indicating the light intensities of the plurality of wavelengths obtained at a particular time during the processing, and the data pattern being obtained by dividing differential coefficient value of time-series data of the light intensities of the plurality of wavelengths by time-series data indicating values of the light intensities of the plurality of wavelengths.
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公开(公告)号：US20210249317A1
公开(公告)日：2021-08-12
申请号：US16981612
申请日：2019-12-23
发明人： Yohei Kawaguchi , Tatehito Usui , Shigeru Nakamoto
IPC分类号： H01L21/66 , H01L21/311
摘要： To provide a wavelength selection method or a plasma processing method to achieve accurate detection of residual thickness or etching amount, there is provided a plasma processing method, in which a processing object wafer is disposed within a processing chamber in the inside of a vacuum container, and plasma is generated by supplying a processing gas into the processing chamber and used to process a processing-object film layer beforehand formed on a surface of the wafer, and at least two wavelengths are selected from among wavelengths with large mutual information in emission of a plurality of wavelengths of plasma generated during processing of the processing-object film layer, and a temporal change in the emission of at least the two wavelengths is detected, and an endpoint of the processing of the film layer is determined based on a result of the detection.
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公开(公告)号：US12131964B2
公开(公告)日：2024-10-29
申请号：US17878176
申请日：2022-08-01
发明人： Kousuke Fukuchi , Ryoji Asakura , Soichiro Eto , Tsubasa Okamoto , Tatehito Usui , Shigeru Nakamoto
IPC分类号： H01L21/66 , H01J37/32 , H01L21/3213 , H01L21/67
CPC分类号： H01L22/26 , H01J37/32834 , H01J37/32963 , H01L21/32137 , H01L21/32139 , H01L21/67069 , H01L21/67253 , H01J2237/334
摘要： A plasma processing method to detect and process a thickness of the processing target film with high accuracy when a fine shape of the semiconductor wafer surface varies, including detecting a state of a processing target film of a processing target material that is processed inside a vacuum processing chamber; detecting light emission of the plasma; obtaining a differential waveform data of the light emission of the plasma; storing a plurality of pieces of differential waveform pattern data in advance; calculating an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained and the plurality of pieces of differential waveform pattern data stored; and determining an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated.
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公开(公告)号：US12062530B2
公开(公告)日：2024-08-13
申请号：US16911584
申请日：2020-06-25
CPC分类号： H01J37/32972 , G01B11/06 , G01B11/0625 , G01B11/0683 , H01J37/18
摘要： A vacuum processing apparatus includes a processing unit comprising a processing chamber disposed in a vacuum container, a detector detecting a thickness of the target film on a wafer or an end point during the processing of the wafer using a light from the wafer, the detector being functioned to detect the thickness or the end point by comparing a data pattern of obtained in advance indicating light intensities of a plurality of wavelengths related to the film thickness using the wavelength as a parameter and a real data pattern indicating the light intensities of the plurality of wavelengths obtained at a particular time during the processing, and the data pattern being obtained by dividing differential coefficient value of time-series data of the light intensities of the plurality of wavelengths by time-series data indicating values of the light intensities of the plurality of wavelengths.
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公开(公告)号：US11569135B2
公开(公告)日：2023-01-31
申请号：US16981612
申请日：2019-12-23
发明人： Yohei Kawaguchi , Tatehito Usui , Shigeru Nakamoto
IPC分类号： H01L21/66 , H01L21/311
摘要： To provide a wavelength selection method or a plasma processing method to achieve accurate detection of residual thickness or etching amount, there is provided a plasma processing method, in which a processing object wafer is disposed within a processing chamber in the inside of a vacuum container, and plasma is generated by supplying a processing gas into the processing chamber and used to process a processing-object film layer beforehand formed on a surface of the wafer, and at least two wavelengths are selected from among wavelengths with large mutual information in emission of a plurality of wavelengths of plasma generated during processing of the processing-object film layer, and a temporal change in the emission of at least the two wavelengths is detected, and an endpoint of the processing of the film layer is determined based on a result of the detection.
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公开(公告)号：US20240213004A1
公开(公告)日：2024-06-27
申请号：US17911779
申请日：2021-03-15
发明人： Soichiro ETO , Tsubasa OKAMOTO , Shigeru Nakamoto , Tatehito Usui
IPC分类号： H01J37/32 , H01L21/3065
CPC分类号： H01J37/32972 , H01L21/3065 , H01J2237/334
摘要： A plasma processing apparatus and method in which light with a plurality of wavelengths from a surface of a wafer at a plurality of predetermined times during processing for the wafer as the processing target is received, and when a processing amount is detected by using a result acquired by comparing data indicating intensities of the received light with the plurality of wavelengths with comparative data acquired in advance and indicating intensities of the light with the plurality of wavelengths, a similarity in wafers is quantified based on the data indicating the intensities of the light with the plurality of wavelengths of light, and the processing amount is detected by comparing at least one piece of data selected according to the quantified similarity with the data indicating the intensities of the light with the plurality of wavelengths acquired during the processing for the plurality of wafers.
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