公开(公告)号：US11276458B2

公开(公告)日：2022-03-15

申请号：US17080242

申请日：2020-10-26

Applicant: Huawei Technologies Co., Ltd.

Inventor： Bingwu Ji ,  Tanfu Zhao ,  Yunming Zhou ,  Min Fan ,  Zhiyan Li ,  Yunpeng Wang

IPC: G11C8/00 ,  G11C11/4091 ,  G11C7/10 ,  G11C11/4074 ,  G11C11/408 ,  G11C11/4094

Abstract: A memory and a signal processing method are provided. The memory includes a latch circuit, a decoding circuit, a storage array, a read circuit, and a write circuit. The storage array includes M rows and N columns of bitcells. The latch circuit is configured to receive a first address and a second address. The decoding circuit is configured to: determine a first bitcell based on the first address, and determine a second bitcell based on the second address. The write circuit is configured to: receive data, and write the data into the first bitcell through a first port of the first bitcell. The read circuit is configured to read, through the first port of the first bitcell, data stored in the first bitcell; and is further configured to read, through a second port of the second bitcell, data stored in the second bitcell. Implementing this application can implement 1R1RW.

公开(公告)号：US20180062387A1

公开(公告)日：2018-03-01

申请号：US15687252

申请日：2017-08-25

Applicant: Huawei Technologies Co., Ltd.

Inventor： Mei Li ,  Bingwu Ji ,  Yu Xia

IPC: H02H9/04 ,  H01L27/02

CPC classification number: H02H9/046 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0292

Abstract: This application discloses an electrostatic discharge protection apparatus and an integrated circuit with multiple power domains. The electrostatic discharge protection apparatus includes a diode and an NMOS transistor. A positive electrode of the diode is coupled to a first interface, a negative electrode of the diode is coupled to a first electrode of the NMOS transistor, both a second electrode of the NMOS transistor and a gate electrode of the NMOS transistor are coupled to a second interface, and a substrate of the NMOS transistor is used for grounding. At least one electrostatic discharge protection apparatus may be disposed in the integrated circuit with multiple power domains.