公开(公告)号：US20230021432A1

公开(公告)日：2023-01-26

申请号：US17872473

申请日：2022-07-25

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Hao PENG ,  Xiaojing LIAO ,  Zhaozheng HOU

IPC: H01L23/538 ,  H01L23/00 ,  H01L23/367 ,  H01L23/552 ,  H01L21/683 ,  H01L21/48

Abstract: This application discloses a chip package assembly, an electronic device, and a preparation method of a chip package assembly. The chip package assembly includes a package substrate, a chip, and a heat dissipation part. The package substrate includes an upper conductive layer, a lower conductive layer, and a conductive part connected between the upper conductive layer and the lower conductive layer. The chip includes a front electrode and a back electrode that are disposed opposite each other, the chip is embedded in the package substrate, the conductive part surrounds the chip, the front electrode is connected to the lower conductive layer, and the back electrode is connected to the upper conductive layer. The heat dissipation part is connected to a surface of the upper conductive layer that is away from the chip. The upper conductive layer, the lower conductive layer, and the conductive part each conduct heat.

公开(公告)号：US20220254877A1

公开(公告)日：2022-08-11

申请号：US17591016

申请日：2022-02-02

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Wentao YANG ,  Loucheng DAI ,  Chaofan SONG ,  Huiling ZUO ,  Jiang DU ,  Zhaozheng HOU ,  Boning HUANG

IPC: H01L29/06 ,  H01L29/739

Abstract: A semiconductor device, and a related module, circuit, and preparation method are disclosed. The device includes an N-type drift layer, a P-type base layer, N-type emitter layers, gates, a field stop layer, a P-type collector layer, and the like. The field stop layer includes a first doped region and a second doped region that are successively stacked on a surface of the N-type drift layer. A particle radius of an impurity in the first doped region is less than a particle radius of an impurity in the second doped region. Doping densities of both the first doped region and the second doped region are higher than a doping density of the N-type drift layer. According to the semiconductor device, a collector-emitter leakage current of an IGBT can be effectively reduced.

公开(公告)号：US20210082842A1

公开(公告)日：2021-03-18

申请号：US17106520

申请日：2020-11-30

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Qijing HE ,  Xiaojing LIAO ,  Zhaozheng HOU

IPC: H01L23/66 ,  H04B1/04 ,  H01L23/552 ,  H01L25/16 ,  H01L21/56 ,  H01L23/00

Abstract: A wireless transmission module, chips, a passive component, and a coil are integrated into an integral structure, so that an integration level of the wireless transmission module is improved. In addition, the integral structure can effectively implement independence of the module, and the independent module can be flexibly arranged inside structural design of an electronic device, and does not need to be disposed on a mainboard of the electronic device. Only an input terminal of the wireless transmission module needs to be retained on the mainboard of the electronic device. In addition, the integral structure can further effectively increase a capability of a product for working continuously and normally in an extremely harsh scenario, and improve product reliability. In addition, in the structure of the wireless transmission module, the chips and the coil are integrated, and signal transmission paths between the chips and the coil are relatively short.