公开(公告)号：US20240265962A1

公开(公告)日：2024-08-08

申请号：US18021177

申请日：2022-08-12

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Hao TONG ,  Binhao WANG ,  Xiangshui MIAO

IPC: G11C11/4096 ,  G11C11/406 ,  G11C11/4093

CPC classification number: G11C11/4096 ,  G11C11/40603 ,  G11C11/4093 ,  G11C2211/4068

Abstract: A method for operating a dynamic memory is provided, and the method includes the following steps. A refresh operation is performed on the dynamic memory according to predetermined interval time T, an operation command is received in real time at the same time, a read operation is performed on a selected memory cell according to position information of the selected memory cell in the operation command when the operation command is received, and state data read in the read operation is temporarily stored in a read buffer. The interval time T is less than time t required for a voltage value of a capacitor in the memory cell to drop to a critical capacitor voltage value for the read operation to correctly read the state data of the memory cell during a write operation. According to operation command type information in the operation command, corresponding operations are performed on the selected memory cell.

公开(公告)号：US20220271089A1

公开(公告)日：2022-08-25

申请号：US17043672

申请日：2019-09-23

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Hao TONG ,  Wang CAI ,  Xiangshui MIAO

IPC: H01L27/24 ,  H01L45/00

Abstract: The disclosure belongs to the technical field of microelectronic devices and memories, and discloses a three-dimensional stacked phase change memory and a preparation method thereof. The preparation method includes: preparing a multilayer structure in which horizontal electrode layers and insulating layers are alternately stacked, then performing etching to form trenches and separated three-dimensional strip electrodes, next filling the trenches with an insulating medium, and then forming small holes at the boundary region between the three-dimensional strip electrodes and the insulating medium, thereafter sequentially depositing a phase change material on the walls of the small holes, and filling the small holes with an electrode material to prepare vertical electrodes, so as to obtain a three-dimensional stacked phase change memory stacked in multiple layers. By improving the overall process of the preparation method, the disclosure realizes the establishment of a three-dimensional phase change memory array by using a vertical electrode structure.

公开(公告)号：US20210280784A1

公开(公告)日：2021-09-09

申请号：US16626520

申请日：2018-11-29

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Xiangshui MIAO ,  Hao TONG ,  Yushan SHEN ,  Wang CAI

IPC: H01L45/00 ,  H01L27/24

Abstract: A three-dimensional stacked phase change memory and a preparation method thereof are provided. The method comprises: preparing first horizontal electrodes spaced apart from each other on a substrate; preparing first strip-shaped phase change layers, each having a central gap, between the first horizontal electrodes; preparing first selectors in the central gaps of the first strip-shaped phase change layers; preparing a first insulating layer; preparing second strip-shaped phase change layers at same vertical positions on the first insulating layer; preparing second selectors; then preparing horizontally-oriented insulating holes between the horizontal electrodes; and preparing vertical electrodes between the adjacent insulating holes, thereby forming a multilayer stacked phase change memory with a vertical structure.

公开(公告)号：US20210242280A1

公开(公告)日：2021-08-05

申请号：US17042954

申请日：2019-07-12

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Hao TONG ,  Da HE ,  Xiangshui MIAO

IPC: H01L27/24 ,  H01L45/00

Abstract: A pretreatment method of a selector device is provided, which includes: (1) performing a first voltage scan of a selector through selecting a voltage scan range and setting a first limit current Icc1 to obtain a resistance state R1 of a sub-threshold region thereof; (2) setting an nth limit current Icc(n) and performing an nth voltage scan of the selector according to a resistance state Rn-1 of a sub-threshold region of the selector after an n-1th voltage scan to obtain a resistance state Rn of a sub-threshold region thereof, where, Icc(n-1)

公开(公告)号：US20200379276A1

公开(公告)日：2020-12-03

申请号：US16764403

申请日：2018-06-07

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Xiangshui MIAO ,  Yitao LU ,  Hao TONG ,  Yi WANG

IPC: G02F1/01 ,  G02B1/00 ,  G02F1/00

Abstract: Disclosed in the present invention are a chalcogenide phase change material based all-optical switch and a manufacturing method therefor, relating to the field of optical communications. The all-optical switch comprises: stacked in sequence, a cover layer film, a chalcogenide phase change material film, an isolation layer film, a silicon photonic crystal, and a substrate. The silicon photonic crystal comprises a nano-porous structure such that the silicon photonic crystal has a Fano resonance effect. When the all-optical switch is used, the state of the chalcogenide phase change material film is controlled by means of laser, and the resonance state of the silicon photonic crystal is modulated to implement modulation of signal light transmissivity; the modulation range is within a communication band from 1500 nm to 1600 nm, thereby implementing an optical switch. The all-optical switch of the present invention has the characteristics of high contrast ratio, high rate and low loss.