公开(公告)号：US10690852B2

公开(公告)日：2020-06-23

申请号：US16228486

申请日：2018-12-20

Applicant: IMEC vzw

Inventor： Joris Van Campenhout ,  Ashwyn Srinivasan ,  Bernardette Kunert ,  Maria Ioanna Pantouvaki

IPC: G02B6/13 ,  G02F1/025 ,  G02B6/12 ,  G02F1/017

Abstract: A III-V semiconductor waveguide nanoridge structure having a narrow supporting base with a freestanding wider body portion on top, is disclosed. In one aspect, the III-V waveguide includes a PIN diode. The waveguide comprises a III-V semiconductor waveguide core formed in the freestanding wider body portion; at least one heterojunction incorporated in the III-V semiconductor waveguide core; a bottom doped region of a first polarity positioned at a bottom of the narrow supporting base, forming a lower contact; and an upper doped region of a second polarity, forming an upper contact. The upper contact is positioned in at least one side wall of the freestanding wider body portion.