公开(公告)号：US10192956B2

公开(公告)日：2019-01-29

申请号：US15204853

申请日：2016-07-07

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Safak Sayan ,  Min-Soo Kim ,  Doni Parnell ,  Roel Gronheid

IPC: H01L29/10 ,  H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3065 ,  H01L29/66

Abstract: A method for producing fin structures, using Directed Self Assembly (DSA) lithographic patterning, in an area of a semiconductor substrate includes providing a semiconductor substrate covered with a shallow trench isolation (STI) layer stack on a side thereof; defining a fin area on that side of the substrate by performing a lithographic patterning step other than DSA, wherein the fin structures will be produced in the fin area; and producing the fin structures in the semiconductor substrate within the fin area according to a predetermined fin pattern using DSA lithographic patterning. The disclosure also relates to associated semiconductor structures.