公开(公告)号：US20160322461A1

公开(公告)日：2016-11-03

申请号：US15204853

申请日：2016-07-07

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Safak Sayan ,  Min-Soo Kim ,  Doni Parnell ,  Roel Gronheid

IPC: H01L29/10 ,  H01L29/78 ,  H01L21/308 ,  H01L29/66 ,  H01L21/3065 ,  H01L29/06 ,  H01L21/762

CPC classification number: H01L29/1037 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/7851

Abstract: A method for producing fin structures, using Directed Self Assembly (DSA) lithographic patterning, in an area of a semiconductor substrate includes providing a semiconductor substrate covered with a shallow trench isolation (STI) layer stack on a side thereof; defining a fin area on that side of the substrate by performing a lithographic patterning step other than DSA, wherein the fin structures will be produced in the fin area; and producing the fin structures in the semiconductor substrate within the fin area according to a predetermined fin pattern using DSA lithographic patterning. The disclosure also relates to associated semiconductor structures.

公开(公告)号：US09391141B2

公开(公告)日：2016-07-12

申请号：US14628608

申请日：2015-02-23

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Safak Sayan ,  Min-Soo Kim ,  Doni Parnell ,  Roel Gronheid

IPC: H01L21/308 ,  H01L29/10 ,  H01L29/06 ,  H01L21/762 ,  H01L21/027 ,  H01L21/311

CPC classification number: H01L29/1037 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/7851

Abstract: A method for producing fin structures, using Directed Self Assembly (DSA) lithographic patterning, in an area of a semiconductor substrate includes providing a semiconductor substrate covered with a shallow trench isolation (STI) layer stack on a side thereof; defining a fin area on that side of the substrate by performing a lithographic patterning step other than DSA, wherein the fin structures will be produced in the fin area; and producing the fin structures in the semiconductor substrate within the fin area according to a predetermined fin pattern using DSA lithographic patterning. The disclosure also relates to associated semiconductor structures.

Abstract translation: 在半导体衬底的区域中使用定向自组装（DSA）光刻图案来制造鳍结构的方法包括提供在其一侧上覆盖有浅沟槽隔离（STI）层堆叠的半导体衬底; 通过进行DSA以外的平版印刷图案化步骤，在所述基板的所述一侧上限定翅片区域，其中所述翅片结构将在所述翅片区域中产生; 以及使用DSA平版印刷图案，根据预定的散热片图案在散热片区域内的半导体衬底中制造翅片结构。 本公开还涉及相关联的半导体结构。

公开(公告)号：US20150243509A1

公开(公告)日：2015-08-27

申请号：US14628608

申请日：2015-02-23

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Safak Sayan ,  Min-Soo Kim ,  Doni Parnell ,  Roel Gronheid

IPC: H01L21/308 ,  H01L21/762 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L29/1037 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/7851

Abstract: A method for producing fin structures, using Directed Self Assembly (DSA) lithographic patterning, in an area of a semiconductor substrate includes providing a semiconductor substrate covered with a shallow trench isolation (STI) layer stack on a side thereof; defining a fin area on that side of the substrate by performing a lithographic patterning step other than DSA, wherein the fin structures will be produced in the fin area; and producing the fin structures in the semiconductor substrate within the fin area according to a predetermined fin pattern using DSA lithographic patterning. The disclosure also relates to associated semiconductor structures.

Abstract translation: 在半导体衬底的区域中使用定向自组装（DSA）光刻图案来制造鳍结构的方法包括提供在其一侧上覆盖有浅沟槽隔离（STI）层堆叠的半导体衬底; 通过进行DSA以外的平版印刷图案化步骤，在所述基板的所述一侧上限定翅片区域，其中所述翅片结构将在所述翅片区域中产生; 以及使用DSA平版印刷图案，根据预定的散热片图案在散热片区域内的半导体衬底中制造翅片结构。 本公开还涉及相关联的半导体结构。

公开(公告)号：US10192956B2

公开(公告)日：2019-01-29

申请号：US15204853

申请日：2016-07-07

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Safak Sayan ,  Min-Soo Kim ,  Doni Parnell ,  Roel Gronheid

IPC: H01L29/10 ,  H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3065 ,  H01L29/66

Abstract: A method for producing fin structures, using Directed Self Assembly (DSA) lithographic patterning, in an area of a semiconductor substrate includes providing a semiconductor substrate covered with a shallow trench isolation (STI) layer stack on a side thereof; defining a fin area on that side of the substrate by performing a lithographic patterning step other than DSA, wherein the fin structures will be produced in the fin area; and producing the fin structures in the semiconductor substrate within the fin area according to a predetermined fin pattern using DSA lithographic patterning. The disclosure also relates to associated semiconductor structures.