公开(公告)号：US11552596B2

公开(公告)日：2023-01-10

申请号：US17328181

申请日：2021-05-24

Applicant: IMEC VZW ,  VRIJE UNIVERSITEIT BRUSSEL

Inventor： Sehoon Park ,  Jan Craninckx ,  Pierre Wambacq ,  Davide Guermandi

IPC: H03B19/14 ,  H03K5/00

Abstract: An odd harmonic generation device is provided. The odd harmonic generation device includes an even harmonic generation unit and a mixer. In this context, the even harmonic generation unit is configured to generate two even harmonic signals on the basis of a fundamental signal. In addition to this, the mixer is configured to mix the fundamental signal with the two even harmonic signals to generate a desired odd harmonic signal.

公开(公告)号：US20220385254A1

公开(公告)日：2022-12-01

申请号：US17826692

申请日：2022-05-27

Applicant: IMEC VZW ,  VRIJE UNIVERSITEIT BRUSSEL

Inventor： Sehoon Park ,  Daewoong Park ,  Pierre Wambacq ,  Jan Craninckx

IPC: H03G3/30 ,  H03F3/45

Abstract: A differential amplifier is provided. The differential amplifier includes a first single-ended amplifying means including at least a first terminal and a second terminal, a second single-ended amplifying means including at least a first terminal and a second terminal, a first transmission line, and a second transmission line. In this context, the first terminal of the first single-ended amplifying means is connected to the second terminal of the second single-ended amplifying means via the first transmission line. In addition to this, the first terminal of the second single-ended amplifying means is connected to the second terminal of the first single-ended amplifying means via the second transmission line.

公开(公告)号：US20220123695A1

公开(公告)日：2022-04-21

申请号：US17464631

申请日：2021-09-01

Applicant: IMEC VZW ,  VRIJE UNIVERSITEIT BRUSSEL

Inventor： Xinyan Tang ,  Pierre Wambacq

IPC: H03F1/42 ,  H03F3/24 ,  H04B1/40

Abstract: A wideband radio-frequency transceiver front-end is provided. The transceiver front-end includes an antenna port and a transmission path coupled to the antenna port comprising a power amplifier and a first matching network. The transceiver front-end further includes a reception path coupled to the antenna port comprising a low noise amplifier and a second matching network. Furthermore, the transceiver front-end includes an impedance inverter coupled in-between the antenna port and the second matching network. Moreover, the transceiver front-end includes a controller comprising switching arrangement for a gate and a drain of the power amplifier. In this context, the controller is configured to initiate a first reception mode by connecting the gate of the power amplifier to ground and by connecting the drain of the power amplifier to a supply voltage.

公开(公告)号：US11223329B2

公开(公告)日：2022-01-11

申请号：US16788696

申请日：2020-02-12

Applicant: IMEC USA NANOELECTRONICS DESIGN CENTER, Inc. ,  IMEC VZW

Inventor： Aritra Banerjee ,  Pierre Wambacq

IPC: H03F1/22 ,  H03F1/30 ,  H03F3/213 ,  H03F1/02 ,  H03F1/32 ,  H03F3/45 ,  H03G3/30

Abstract: A power amplifier circuitry (100) comprises: a transistor stack (110) comprising at least two stacked transistor units (112A, 112B, 112C) for amplifying input signals; wherein each stacked transistor unit (112A, 112B, 112C) comprises a plurality of controllable segments (120-1 to 120-N, 130-1 to 130-N, 140-1 to 140-N), each comprising a segment transistor (122, 132, 142), wherein source terminals (123, 133, 143) within each transistor unit are connected, drain terminals (125, 135, 145) within each transistor unit are connected and gate terminals (124, 134, 144) within each transistor unit are connected, wherein each segment transistor (122, 132, 142) further comprises a back gate terminal (126, 136, 146) for setting a body bias, wherein at least two of the segment transistors (122, 132, 142) within each transistor unit have independently connected back gate terminals (126, 136, 146); and a control unit (190) configured to control the body bias for selecting an amplifier class of each of the controllable segments (120-1 to 120-N, 130-1 to 130-N, 140-1 to 140-N) of each of the stacked transistor units (112A, 112B, 112C).

公开(公告)号：US20180337658A1

公开(公告)日：2018-11-22

申请号：US15981165

申请日：2018-05-16

Applicant: IMEC VZW

Inventor： Kristof Vaesen ,  Pierre Wambacq

IPC: H03H11/16 ,  H03F3/68 ,  H03F3/45 ,  H03F1/02 ,  H03F3/19

Abstract: A device for phase shifting is disclosed, comprising an input amplifier, a biasing circuit, a first output amplifier and a second output amplifier being variable-gain amplifiers, and a quadrature hybrid coupler. The input amplifier is connected to an input port of the coupler, the first output amplifier is connected to a through port of the coupler, the second output amplifier is connected to a coupled port of the coupler, and the biasing circuit is connected to an isolated port of the coupler. The device also includes, the quadrature hybrid coupler configured to receive, at the input port, an input signal from the input amplifier, output, at the through port, a through signal, receive, at the isolated port, a bias signal from the biasing circuit, and output, at the coupled port, a coupled signal having a phase differing from a phase of the through signal.