公开(公告)号：US20230178512A1

公开(公告)日：2023-06-08

申请号：US18104456

申请日：2023-02-01

Applicant: Infineon Technologies AG

Inventor： Alfred Sigl ,  Alexander Frey

IPC: H01L23/00 ,  H01L21/18 ,  H01L25/065

CPC classification number: H01L24/94 ,  H01L21/187 ,  H01L25/0652

Abstract: A method of manufacturing a bonded substrate stack includes: providing a first substrate having a first hybrid interface layer, the first hybrid interface layer including a first insulator and a first metal; and providing a second substrate having a second hybrid interface layer, the second hybrid interface layer including a second insulator and a second metal. The hybrid interface layers are surface-activated to generate dangling bonds on the hybrid interface layers. The surface-activated hybrid interface layers are brought into contact, such that the dangling bonds of the first hybrid interface layer and the dangling bonds of the second hybrid interface layer bond together to form first insulator to second insulator bonds and first metal to second metal bonds.

公开(公告)号：US11594515B2

公开(公告)日：2023-02-28

申请号：US17518000

申请日：2021-11-03

Applicant: Infineon Technologies AG

Inventor： Alfred Sigl ,  Alexander Frey

IPC: H01L23/00 ,  H01L21/18 ,  H01L25/065

Abstract: A method of manufacturing a bonded substrate stack includes: providing a first substrate having a first hybrid interface layer, the first hybrid interface layer including a first insulator and a first metal; and providing a second substrate having a second hybrid interface layer, the second hybrid interface layer including a second insulator and a second metal. The hybrid interface layers are surface-activated by particle bombardment which is configured to remove atoms of the first hybrid interface layer and atoms of the second hybrid interface layer to generate dangling bonds on the hybrid interface layers. The surface-activated hybrid interface layers are brought into contact, such that the dangling bonds of the first hybrid interface layer and the dangling bonds of the second hybrid interface layer bond together to form first insulator to second insulator bonds and first metal to second metal bonds.

公开(公告)号：US11414320B2

公开(公告)日：2022-08-16

申请号：US17065156

申请日：2020-10-07

Applicant: Infineon Technologies AG

Inventor： Alfred Sigl ,  Wolfgang Friza ,  Stefan Geissler

IPC: B81C1/00 ,  H01L21/311 ,  H01L21/677 ,  H01L23/00 ,  H04R19/00 ,  H01L21/768

Abstract: A method for producing a thin-film layer includes providing a layer stack on a carrier substrate, wherein the layer stack includes a carrier layer and a sacrificial layer, and wherein the sacrificial layer includes areas in which the carrier layer is exposed. The method includes providing the thin-film layer on the layer stack, such that the thin-film layer bears on the sacrificial layer and, in the areas of the sacrificial layer in which the carrier layer is exposed, against the carrier layer. The method includes at least partly removing the sacrificial layer from the thin-film layer in order to eliminate a contact between the thin-film layer and the sacrificial layer in some areas. The method also includes detaching the thin-film layer from the carrier layer.

公开(公告)号：US20220139870A1

公开(公告)日：2022-05-05

申请号：US17518000

申请日：2021-11-03

Applicant: Infineon Technologies AG

Inventor： Alfred Sigl ,  Alexander Frey

IPC: H01L23/00 ,  H01L25/065 ,  H01L21/18

Abstract: A method of manufacturing a bonded substrate stack includes: providing a first substrate having a first hybrid interface layer, the first hybrid interface layer including a first insulator and a first metal; and providing a second substrate having a second hybrid interface layer, the second hybrid interface layer including a second insulator and a second metal. The hybrid interface layers are surface-activated by particle bombardment which is configured to remove atoms of the first hybrid interface layer and atoms of the second hybrid interface layer to generate dangling bonds on the hybrid interface layers. The surface-activated hybrid interface layers are brought into contact, such that the dangling bonds of the first hybrid interface layer and the dangling bonds of the second hybrid interface layer bond together to form first insulator to second insulator bonds and first metal to second metal bonds.

公开(公告)号：US20190241431A1

公开(公告)日：2019-08-08

申请号：US16269225

申请日：2019-02-06

Applicant: Infineon Technologies AG

Inventor： Alfred Sigl ,  Wolfgang Friza ,  Stefan Geissler

IPC: B81C1/00 ,  H01L21/311 ,  H01L21/677 ,  H01L23/00

CPC classification number: B81C1/00349 ,  B81C1/00523 ,  H01L21/311 ,  H01L21/67763 ,  H01L24/94 ,  H01L2924/1461

Abstract: A method for producing a thin-film layer includes providing a layer stack on a carrier substrate, wherein the layer stack includes a carrier layer and a sacrificial layer, and wherein the sacrificial layer includes areas in which the carrier layer is exposed. The method includes providing the thin-film layer on the layer stack, such that the thin-film layer bears on the sacrificial layer and, in the areas of the sacrificial layer in which the carrier layer is exposed, against the carrier layer. The method includes at least partly removing the sacrificial layer from the thin-film layer in order to eliminate a contact between the thin-film layer and the sacrificial layer in some areas. The method also includes detaching the thin-film layer from the carrier layer.