公开(公告)号：US20210334232A1

公开(公告)日：2021-10-28

申请号：US17230526

申请日：2021-04-14

Applicant: Infineon Technologies AG

Inventor： Tobias Islinger ,  Magnus-Maria Hell ,  Maximilian Mangst ,  Eric Pihet ,  Jens Repp

IPC: G06F13/42 ,  G06F13/38 ,  G06F13/30 ,  G06F13/40 ,  G06F1/3234

Abstract: In accordance with an embodiment, an integrated driver circuit includes: a first connection and a second connection configured to be connected to a control chip; at least one bus connection configured to be connected to a bus line; and a control circuit. The control circuit is configured to operate in a first mode or a second mode; to output a reception signal at the second connection in the second mode, where the reception signal represents a bus signal received at the bus connection; to assume a state of low power consumption in the first mode; to change from the first mode to the second mode when a first command is detected at the first connection or at the second connection; and to change from the second mode to the first mode when the bus signal does not indicate any data for a predefined period of time.

公开(公告)号：US10396836B2

公开(公告)日：2019-08-27

申请号：US15941534

申请日：2018-03-30

Applicant: Infineon Technologies AG

Inventor： Magnus-Maria Hell

IPC: H04L25/03 ,  H04B1/04 ,  H03K5/1252 ,  H04L12/40

Abstract: An electronic circuit includes a transmitter with a first output configured to be connected to a first signal line of a signal bus, a second output configured to be connected to a second signal line of a signal bus, and an input configured to receive an input signal; and a ringing suppression circuit with a third output configured to be connected to the first signal line, and a fourth output configured to be connected to the second signal line. The transmitter is configured to operate in one of a first operating state or a second operating state dependent on the input signal. The ringing suppression circuit is configured to detect a change from the first operating state to the second operating state of the transmitter, and to operate in a ringing suppression mode for a predefined time period in response to detecting the change.

公开(公告)号：US09953968B2

公开(公告)日：2018-04-24

申请号：US14628823

申请日：2015-02-23

Applicant: Infineon Technologies AG

Inventor： Yiqun Cao ,  Ulrich Glaser ,  Magnus-Maria Hell ,  Julien Lebon ,  Michael Mayerhofer ,  Andreas Meiser ,  Matthias Stecher ,  Joost Willemen

IPC: H02H9/04 ,  H01L27/02

CPC classification number: H01L27/0255 ,  H01L27/0292 ,  H02H9/046

Abstract: An integrated circuit having an ESD protection structure is described. One embodiment includes a circuit section interconnected with a first terminal and with a second terminal and being operable at voltage differences between the first terminal and second terminal of greater than +10 V and less than −10 V. The integrated circuit additionally includes an ESD protection structure operable to protect the circuit section against electrostatic discharge between the first terminal and the second terminal. The ESD protection structure is operable with voltage differences between the first and second terminals of greater than +10 V and less than −10 V without triggering. The ESD protection structure is electrically and optically coupled to a photon source such that photons emitted by the photon source upon ESD pulse loading are absorbable in the ESD protection structure and an avalanche breakdown is initiatable by electron-hole pairs generated by the absorbed photons.

公开(公告)号：US09263619B2

公开(公告)日：2016-02-16

申请号：US14020391

申请日：2013-09-06

Applicant: Infineon Technologies AG

Inventor： Joost Willemen ,  Michael Mayerhofer ,  Ulrich Glaser ,  Yiqun Cao ,  Andreas Meiser ,  Magnus-Maria Hell ,  Matthias Stecher ,  Julien Lebon

IPC: H01L27/15 ,  H01L31/173 ,  H01L27/02

CPC classification number: H01L31/173 ,  H01L27/0255 ,  H01L27/0629 ,  H01L27/15 ,  H01L29/808 ,  H02H3/20

Abstract: A semiconductor component includes an auxiliary semiconductor device configured to emit radiation. The semiconductor component further includes a semiconductor device. An electrical coupling and an optical coupling between the auxiliary semiconductor device and the semiconductor device are configured to trigger emission of radiation by the auxiliary semiconductor device and to trigger avalanche breakdown in the semiconductor device by absorption of the radiation in the semiconductor device. The semiconductor device includes a pn junction between a first layer of a first conductivity type buried below a surface of a semiconductor body and a doped semiconductor region of a second conductivity type disposed between the surface and the first layer.

Abstract translation: 半导体部件包括被配置为发射辐射的辅助半导体器件。 半导体部件还包括半导体器件。 辅助半导体器件和半导体器件之间的电耦合和光耦合被配置为触发辅助半导体器件的辐射发射，并通过吸收半导体器件中的辐射来触发半导体器件中的雪崩击穿。 半导体器件包括埋在半导体主体的表面下方的第一导电类型的第一层和布置在表面和第一层之间的第二导电类型的掺杂半导体区域之间的pn结。