Abstract:
A circuit includes an electronic switch with an isolated gate, a measuring device for determining a charge at the isolated gate, and an energy supply for providing charge to the isolated gate based on the charge determined by the measuring device.
Abstract:
A semiconductor arrangement may include a multiplicity of semiconductor elements with controlling paths and controlled paths, the controlled paths having controllable conductivities and being connected parallel to each other. The semiconductor arrangement may also include a current evaluation circuit configured to measure current strengths of currents present in the controlled paths and to provide a signal representing the sum of the measured current strengths, and a control circuit connected to the controlling paths and configured to control the conductivities of the controlled paths in accordance with an input signal and the signal representing the sum of the current strengths. The at least one controlled path is controlled to have minimum conductivity if the signal representing the sum of the current strengths is below a threshold value.
Abstract:
A package which comprises an electrically conductive chip carrier, a first chip comprising a first connection terminal, a second connection terminal located on the chip carrier and a control terminal, a second chip comprising a first connection terminal, a second connection terminal located on the chip carrier and a control terminal, wherein the first chip and the second chip are connected to form a half bridge having inlet terminals and an outlet terminal, and a clip having three connection sections connecting the second connection terminal of the first chip with the first connection terminal of the second chip and with the outlet terminal of the half bridge.
Abstract:
In accordance with an embodiment, an electronic circuit includes a first transistor device, at least one second transistor device, and a drive circuit. The first transistor device is integrated in a first semiconductor body, and includes a first load pad at a first surface of the first semiconductor body and a control pad and a second load pad at a second surface of the first semiconductor body. The at least one second transistor device is integrated in a second semiconductor body, and includes a first load pad at a first surface of the second semiconductor body and a control pad and a second load pad at a second surface of the second semiconductor body. The first load pad of the first transistor device and the first load pad of the at least one second transistor device are mounted to an electrically conducting carrier.