公开(公告)号：US20220416022A1

公开(公告)日：2022-12-29

申请号：US17357767

申请日：2021-06-24

Applicant: Intel Corporation

Inventor： Nicholas THOMSON ,  Kalyan KOLLURU ,  Ayan KAR ,  Rui MA ,  Benjamin ORR ,  Nathan JACK ,  Biswajeet GUHA ,  Brian GREENE ,  Lin HU ,  Chung-Hsun LIN ,  Sabih OMAR

IPC: H01L29/06 ,  H01L29/423 ,  H01L27/12

Abstract: Substrate-less nanowire-based lateral diode integrated circuit structures, and methods of fabricating substrate-less nanowire-based lateral diode integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a stack of nanowires. A plurality of P-type epitaxial structures is over the stack of nanowires. A plurality of N-type epitaxial structures is over the stack of nanowires. One or more gate structures is over the stack of nanowires. A semiconductor material is between and in contact with vertically adjacent ones of the stack of nanowires.

公开(公告)号：US20220102385A1

公开(公告)日：2022-03-31

申请号：US17033418

申请日：2020-09-25

Applicant: Intel Corporation

Inventor： Biswajeet GUHA ,  Brian GREENE ,  Avyaya JAYANTHINARASIMHAM ,  Ayan KAR ,  Benjamin ORR ,  Chung-Hsun LIN ,  Curtis TSAI ,  Kalyan KOLLURU ,  Kevin FISCHER ,  Lin HU ,  Nathan JACK ,  Nicholas THOMSON ,  Rishabh MEHANDRU ,  Rui MA ,  Sabih OMAR

IPC: H01L27/12

Abstract: Substrate-free integrated circuit structures, and methods of fabricating substrate-free integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a fin, a plurality of gate structures over the fin, and a plurality of alternating P-type epitaxial structures and N-type epitaxial structures between adjacent ones of the plurality of gate structures.

公开(公告)号：US20210183850A1

公开(公告)日：2021-06-17

申请号：US16713656

申请日：2019-12-13

Applicant: Intel Corporation

Inventor： Nidhi NIDHI ,  Rahul RAMASWAMY ,  Walid M. HAFEZ ,  Hsu-Yu CHANG ,  Ting CHANG ,  Babak FALLAHAZAD ,  Tanuj TRIVEDI ,  Jeong Dong KIM ,  Ayan KAR ,  Benjamin ORR

IPC: H01L27/02 ,  H01L29/06 ,  H01L29/66

Abstract: Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a semiconductor substrate and a source. The source has a first conductivity type and a first insulator separates the source from the semiconductor substrate. The semiconductor device further comprises a drain. The drain has a second conductivity type that is opposite from the first conductivity type, and a second insulator separates the drain from the semiconductor substrate. In an embodiment, the semiconductor further comprises a semiconductor body between the source and the drain, where the semiconductor body is spaced away from the semiconductor substrate.