公开(公告)号：US08822265B2

公开(公告)日：2014-09-02

申请号：US13673504

申请日：2012-11-09

Applicant: Intermolecular Inc.

Inventor： Prashant B Phatak ,  Ronald J. Kuse ,  Jinhong Tong

IPC: H01L21/00

CPC classification number: H01L45/1616 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

Abstract: Methods for producing RRAM resistive switching elements having reduced forming voltage include preventing formation of interfacial layers, and creating electronic defects in a dielectric film. Suppressing interfacial layers in an electrode reduces forming voltage. Electronic defects in a dielectric film foster formation of conductive pathways.

Abstract translation: 制造具有降低的成形电压的RRAM电阻式开关元件的方法包括阻止形成界面层，并在电介质膜中产生电子缺陷。 抑制电极中的界面层降低成形电压。 电介质膜中的电子缺陷促进导电通路的形成。

公开(公告)号：US20130099191A1

公开(公告)日：2013-04-25

申请号：US13656908

申请日：2012-10-22

Applicant: INTERMOLECULAR, INC.

Inventor： Ronald J. Kuse ,  Tony P. Chiang ,  Imran Hashim

IPC: H01L45/00

CPC classification number: H01L45/146 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/1616 ,  H01L45/1641

Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.

Abstract translation: 描述了具有改进的开关特性的电阻式开关存储元件，包括具有第一电极和第二电极的存储元件，第一电极和第二电极之间的开关层，包括氧化铪并具有第一厚度，以及耦合层， 所述开关层和所述第二电极，所述耦合层包括包含金属钛并且具有小于所述第一厚度的25％的第二厚度的材料。