公开(公告)号：US20150228492A1

公开(公告)日：2015-08-13

申请号：US14423627

申请日：2013-04-18

Applicant: Japan Science and Technology Agency

Inventor： Akira Toriumi ,  Choong-hyun Lee

IPC: H01L21/28 ,  H01L29/51 ,  H01L21/02 ,  H01L29/16

CPC classification number: H01L21/28255 ,  H01L21/02112 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02236 ,  H01L21/02255 ,  H01L29/16 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

Abstract: A semiconductor structure includes: a germanium layer 30; and an insulating film that has a film 32 that includes a germanium oxide and is formed on the germanium layer and a high dielectric oxide film 34 that is formed on the film including the germanium oxide and has a dielectric constant higher than that of a silicon oxide, wherein: an EOT of the insulating film is 2 nm or less; and on a presumption that an Au acting as a metal film is formed on the insulating film, a leak current density is 10−5×EOT+4 A/cm2 or less in a case where a voltage of the metal film with respect to the germanium layer is applied from a flat band voltage to an accumulation region side by 1 V.

Abstract translation: 半导体结构包括：锗层30; 以及绝缘膜，其具有包含氧化锗并形成在锗层上的膜32和形成在包含氧化锗并且介电常数高于氧化硅的介电常数的高介电氧化物膜34上的高电介质氧化膜34 其中：所述绝缘膜的EOT为2nm以下; 并且假设在绝缘膜上形成作为金属膜的金属，在金属膜相对于金属膜的电压的情况下，漏电流密度为10-5×EOT + 4A / cm 2以下 锗层从平坦带电压施加到积聚区域侧1V。

公开(公告)号：US20150171185A1

公开(公告)日：2015-06-18

申请号：US14630198

申请日：2015-02-24

Applicant: Japan Science and Technology Agency

Inventor： Akira Toriumi ,  Toshiyuki Tabata

IPC: H01L29/51 ,  H01L29/16 ,  H01L21/3105 ,  H01L29/78

CPC classification number: H01L29/517 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/28255 ,  H01L21/3105 ,  H01L29/16 ,  H01L29/512 ,  H01L29/513 ,  H01L29/518 ,  H01L29/78

Abstract: A semiconductor structure includes: a germanium layer 30; and an aluminum oxynitride film 32 that is formed on the germanium layer, wherein: an EOT of the aluminum oxynitride film is 2 nm or less; Cit/Cacc is 0.4 or less; on a presumption that Au acting as a metal film is formed on the aluminum oxynitride film, the Cit is a capacitance value between the germanium layer and the metal film at a frequency of 1 MHz in a case where a voltage of the metal film with respect to the germanium layer is applied to an inversion region side by 0.5 V; and the Cacc is a capacitance value between the germanium layer and the metal film in an accumulation region.

Abstract translation: 半导体结构包括：锗层30; 以及形成在锗层上的氧氮化铝膜32，其中：氮氧化铝膜的EOT为2nm以下; Cit / Cacc为0.4以下; 假设在氧氮化铝膜上形成作为金属膜的金属，则Cit为金属膜的电压相对于1MHz时的锗层与金属膜之间的电容值 到锗层被反向区域侧施加0.5V; 并且Cacc是在积聚区域中的锗层和金属膜之间的电容值。