Thin film transistor and the manufacturing method thereof
    11.
    发明申请
    Thin film transistor and the manufacturing method thereof 有权
    薄膜晶体管及其制造方法

    公开(公告)号:US20060255338A1

    公开(公告)日:2006-11-16

    申请号:US11433177

    申请日:2006-05-12

    IPC分类号: H01L29/76 H01L29/10

    摘要: A thin film transistor and a method for manufacturing the same capable of reducing a change in a threshold voltage of the thin film transistor formed on a flexible substrate. The thin film transistor includes: a substrate, the substrate being flexible; a buffer layer having a low dielectric constant from about 1.2 to about 4.0 and formed on the substrate; a semiconductor layer formed on the buffer layer; a gate electrode; first insulation layer formed between the gate electrode and the semiconductor layer; a second insulation layer formed on the semiconductor layer and the gate electrode; and a source/drain electrode electrically connected to the semiconductor layer through a contact hole formed in the second insulation layer. Therefore, the thin film transistor can reduce a change in its threshold voltage, thereby reducing changes in brightness, gray scale, contrast, etc., of light-emitting devices using the thin film transistor.

    摘要翻译: 一种薄膜晶体管及其制造方法,能够减小形成在柔性基板上的薄膜晶体管的阈值电压的变化。 所述薄膜晶体管包括:基板,所述基板是柔性的; 缓冲层,其介电常数为约1.2至约4.0,并形成在基底上; 形成在缓冲层上的半导体层; 栅电极; 形成在所述栅电极和所述半导体层之间的第一绝缘层; 形成在所述半导体层和所述栅电极上的第二绝缘层; 以及源极/漏极,其通过形成在第二绝缘层中的接触孔与半导体层电连接。 因此,薄膜晶体管可以减小其阈值电压的变化,从而减少使用薄膜晶体管的发光器件的亮度,灰度,对比度等的变化。

    Flat panel display
    12.
    发明申请

    公开(公告)号:US20060091815A1

    公开(公告)日:2006-05-04

    申请号:US11304893

    申请日:2005-12-16

    申请人: Sang-Il Park Jae Koo

    发明人: Sang-Il Park Jae Koo

    IPC分类号: G09G3/10

    摘要: The present invention discloses an organic light emitting diode capable of obtaining proper luminance and long life cycle by controlling an amount of current flowing through an organic electroluminescent device per unit pixel, comprises a luminescent device; and first and second transistors for driving the luminescent device, wherein the first and second transistors have different resistance values. The first transistor is a driving transistor for driving the luminescent device, the second transistor is a switching transistor for switching on and off of the driving transistor, and the driving transistor has a higher resistance value than the switching transistor.