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218 条记录 (耗时 0.042 秒)

    ROLL-TO-ROLL EVAPORATION SYSTEM AND METHOD TO MANUFACTURE GROUP IBIIIAVIA PHOTOVOLTAICS
    13.
    发明申请
    ROLL-TO-ROLL EVAPORATION SYSTEM AND METHOD TO MANUFACTURE GROUP IBIIIAVIA PHOTOVOLTAICS 审中-公开
    滚动滚筒蒸发系统及其制造方法IBIIIAVIA PHOTOVOLTAICS

    公开(公告)号：US20120247388A1

    公开(公告)日：2012-10-04

    申请号：US13342648

    申请日：2012-01-03

    申请人： Jorge Vasquez ,  James Freitag ,  Mustafa Pinarbasi

    发明人： Jorge Vasquez ,  James Freitag ,  Mustafa Pinarbasi

    IPC分类号： C23C16/54

    CPC分类号： H01L21/6776 ,  C23C14/562 ,  C23C14/564 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/02631 ,  H01L31/0322 ,  H01L31/206 ,  Y02E10/541 ,  Y02P70/521

    摘要： The present inventions provide method and apparatus that employ constituents vaporized from one or more constituent supply source or sources to form one or more films of a precursor layer formed on a surface of a continuous flexible workpiece. Of particular significance is the implementation of vapor deposition systems that operate upon a horizontally disposed portion of a continuous flexible workpiece and a vertically disposed portion of a continuous flexible workpiece, preferably in conjunction with a short free-span zone of the portion of a continuous flexible workpiece.

    摘要翻译： 本发明提供了使用从一个或多个构成供应源或源蒸发的组分形成在连续柔性工件的表面上形成的前体层的一个或多个膜的方法和装置。 特别重要的是实施气相沉积系统，其操作在连续柔性工件的水平放置部分和连续柔性工件的垂直设置部分上，优选结合连续柔性工件部分的短自由跨距区域 工件。

    ROLL-TO-ROLL REACTOR FOR PROCESSING FLEXIBLE CONTINUOUS WORKPIECE
    14.
    发明申请
    ROLL-TO-ROLL REACTOR FOR PROCESSING FLEXIBLE CONTINUOUS WORKPIECE 审中-公开
    用于加工柔性连续工件的辊对辊反应器

    公开(公告)号：US20120234314A1

    公开(公告)日：2012-09-20

    申请号：US13100201

    申请日：2011-05-03

    申请人： Howard Zolla ,  Jorge Vasquez ,  James Freitag ,  Mustafa Pinarbasi ,  Robert J. Bailey

    发明人： Howard Zolla ,  Jorge Vasquez ,  James Freitag ,  Mustafa Pinarbasi ,  Robert J. Bailey

    IPC分类号： F24C3/00

    CPC分类号： H01L31/0322 ,  H01L31/0749 ,  H01L31/206 ,  Y02E10/541 ,  Y02P70/521

    摘要： The present invention provides a reactor for preparing thin films of compound semiconductors for photovoltaic devices. The reactor includes a chamber that has a bottom surface that, in some locations, has protrusions that contact the bottom surface of the substrate having the compound semiconductor to provide uniform heating and cooling of the substrate. Interior walls of the chamber can also be lined with high thermal conductivity portions and low thermal conductivity portions interposed between high thermal conductivity portions.

    摘要翻译： 本发明提供一种用于制备用于光伏器件的化合物半导体的薄膜的反应器。 反应器包括具有底表面的室，其在一些位置具有与具有化合物半导体的衬底的底表面接触的突起，以提供衬底的均匀加热和冷却。 腔室的内壁还可以衬有高导热部分和介于高导热部分之间的低导热部分。

    METHOD OF MAKING CONTACT TO A SOLAR CELL EMPLOYING A GROUP IBIIIAVIA COMPOUND ABSORBER LAYER
    16.
    发明申请
    METHOD OF MAKING CONTACT TO A SOLAR CELL EMPLOYING A GROUP IBIIIAVIA COMPOUND ABSORBER LAYER 审中-公开
    制造与采用IBIIIAVIA化合物吸收层的太阳能电池接触的方法

    公开(公告)号：US20090283140A1

    公开(公告)日：2009-11-19

    申请号：US12123424

    申请日：2008-05-19

    申请人： James Freitag ,  Mustafa Pinarbasi ,  Bulent M. Basol

    发明人： James Freitag ,  Mustafa Pinarbasi ,  Bulent M. Basol

    IPC分类号： H01L31/00 ,  H01L31/02

    CPC分类号： H01L31/0392 ,  H01L31/022425 ,  H01L31/0322 ,  H01L31/03925 ,  H01L31/03928 ,  Y02E10/541 ,  Y02P70/521

    摘要： A solar cell manufacturing method which forms a Group IBIIAVIA absorber layer over a front side of a metallic substrate. The back side of the metallic substrate is coated with a conductive protection layer, such as a metal nitride material, that that does not form a high resistivity selenide or sulfide films when exposed to Se and S species at temperatures in the range of 400-600 C. Additionally, the protection material layer is stable in highly acidic and basic electroplating solutions that are employed to deposit layers or precursor layers comprising Cu and at least one of In, Ga, Se and S.

    摘要翻译： 一种太阳能电池制造方法，其在金属基板的正面上形成IBIIAVIA族吸收体层。 金属基板的背面涂覆有导电保护层，例如金属氮化物材料，当在400-600℃的温度下暴露于Se和S物质时，其不形成高电阻率的硒化物或硫化物膜 C.此外，保护材料层在用于沉积包含Cu和In，Ga，Se和S中的至少一种的层或前体层的高酸性和碱性电镀溶液中是稳定的。

    Magnetoresistive (MR) elements having improved hard bias seed layers
    17.
    发明申请
    Magnetoresistive (MR) elements having improved hard bias seed layers 审中-公开
    具有改进的硬偏置种子层的磁阻（MR）元件

    公开(公告)号：US20070091514A1

    公开(公告)日：2007-04-26

    申请号：US11256437

    申请日：2005-10-21

    申请人： James Freitag ,  Mustafa Pinarbasi

    发明人： James Freitag ,  Mustafa Pinarbasi

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/3932 ,  B82Y25/00 ,  G01R33/093

    摘要： MR devices and associated methods of fabrication are disclosed. An MR device includes an MR element and a bias structure on either side of the MR element for biasing a free layer of the MR element. The bias structure includes a first seed layer formed from Cr, a second seed layer formed from a non-magnetic Cr alloy, and a hard bias magnetic layer. The second seed layer formed from the non-magnetic Cr alloy in formed between the Cr seed layer and the hard bias magnetic layer. An example of a non-magnetic Cr alloy is Chromium-Molybdenum (CrMo).

    摘要翻译： 公开了MR器件和相关的制造方法。 MR装置包括用于偏置MR元件的自由层的MR元件的两侧的MR元件和偏置结构。 偏置结构包括由Cr形成的第一籽晶层，由非磁性Cr合金形成的第二晶种层和硬偏磁层。 由Cr种子层和硬偏磁层之间形成的由非磁性Cr合金形成的第二晶种层。 非磁性Cr合金的例子是铬钼（CrMo）。

    Magnetoresistive sensor having a shape enhanced pinned layer
    18.
    发明申请
    Magnetoresistive sensor having a shape enhanced pinned layer 失效
    具有形状增强的钉扎层的磁阻传感器

    公开(公告)号：US20070035887A1

    公开(公告)日：2007-02-15

    申请号：US11204452

    申请日：2005-08-15

    申请人： James Freitag ,  Kuok Ho ,  Mustafa Pinarbasi ,  Ching Tsang

    发明人： James Freitag ,  Kuok Ho ,  Mustafa Pinarbasi ,  Ching Tsang

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/398

    摘要： A magnetoresistive sensor having a pinned layer that extends beyond the stripe height defined by the free layer of the sensor. The extended pinned layer has a strong shape induced anisotropy that maintains pinning of the pinned layer moment. The extended portion of the pinned layer has sides beyond the stripe height that are perfectly aligned with the sides of the sensor within the stripe height. This perfect alignment is made possible by a manufacturing method that uses a mask structure for more than one manufacturing phase, eliminating the need for multiple mask alignments.

    摘要翻译： 磁阻传感器具有延伸超过由传感器的自由层限定的条纹高度的钉扎层。 延伸的钉扎层具有强烈的形状诱导的各向异性，保持钉扎层力矩的钉扎。 被钉扎层的延伸部分具有超过条带高度的侧面，其在条纹高度内完全与传感器的侧面对准。 通过使用掩模结构用于多于一个制造阶段的制造方法，可以实现这种完美的对准，从而消除了对多个掩模对准的需要。

    Magnetic sensor having a Ru/Si based seedlayer providing improved free layer biasing
    19.
    发明申请
    Magnetic sensor having a Ru/Si based seedlayer providing improved free layer biasing 失效

    公开(公告)号：US20060152863A1

    公开(公告)日：2006-07-13

    申请号：US11033435

    申请日：2005-01-10

    申请人： James Freitag ,  Mustafa Pinarbasi

    发明人： James Freitag ,  Mustafa Pinarbasi

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11B5/3932 ,  G11B2005/0016

    摘要： A magnetoresistive sensor having a novel seed layer that allows a bias layer formed there over to have exceptional hard magnetic properties when deposited over a crystalline structure such as an AFM layer in a partial mill sensor design. The seed layer structure includes alternating layers of Ru and Si and a layer of CrMo formed thereover. The seed layer interrupts the epitaxial growth of an underlying crystalline structure, allowing a hard magnetic material formed over the seed layer to have a desired grain structure that is different from that of the underlying crystalline layer. The seed layer is also resistant to corrosion, providing improved sense current conduction to the sensor.

    Magnetoresistive sensor having a high coercivity hard magnetic bias layer deposited over a metallic layer
    20.
    发明申请
    Magnetoresistive sensor having a high coercivity hard magnetic bias layer deposited over a metallic layer 有权
    具有沉积在金属层上的高矫顽力硬磁偏置层的磁阻传感器

    公开(公告)号：US20060067014A1

    公开(公告)日：2006-03-30

    申请号：US10954803

    申请日：2004-09-29

    申请人： James Freitag ,  Mustafa Pinarbasi

    发明人： James Freitag ,  Mustafa Pinarbasi

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3932

    摘要： A magnetoresistive sensor having hard bias layers constructed of CoPtCrB, which high coercivity when deposited over crystalline materials such as an AFM layer or other sensor material. The bias layer material exhibits high coercivity and high moment even when deposited over a crystalline structure such as that of an underlying sensor material by not assuming the crystalline structure of the underlying crystalline layer. The bias layer material is especially beneficial for use in a partial mill sensor design wherein a portion of the sensor layers extends beyond the active area of the sensor and the bias layer must be deposited on the extended portion of sensor material.

    摘要翻译： 具有由CoPtCrB构成的硬偏置层的磁致电阻传感器，其在诸如AFM层或其它传感器材料的结晶材料上沉积时具有高的矫顽力。 即使当沉积在诸如下面的传感器材料的结晶结构上时，偏置层材料通过不假定下面的晶体层的晶体结构，表现出高的矫顽力和高的力矩。 偏置层材料特别有利于在部分磨机传感器设计中使用，其中传感器层的一部分延伸超出传感器的有效区域，并且偏置层必须沉积在传感器材料的延伸部分上。