公开(公告)号：US6159830A

公开(公告)日：2000-12-12

申请号：US363645

申请日：1999-07-30

Applicant: Norbert Galster ,  Pavel Hazdra ,  Jan Vobecky

Inventor： Norbert Galster ,  Pavel Hazdra ,  Jan Vobecky

IPC: H01L29/744 ,  H01L21/265 ,  H01L21/266 ,  H01L21/322 ,  H01L21/426 ,  H01L21/425

CPC classification number: H01L21/26506 ,  H01L21/266

Abstract: In a process for adjusting the carrier lifetime in a semiconductor component (1) by means of particle irradiation (P), at least two defect regions (10, 11, 12, 13) are produced in the semiconductor component (1). In this process, a particle beam (P), consisting of particles (a, b, c, d) with at least approximately the same initial energy, is acted on by at least one means (2), before reaching the semiconductor component (1), in such a way that the particles (a, b, c, d) subsequently have different energy values, at least two energy value groups being distinguishable. It is thereby possible, with a single particle irradiation operation, to produce an arbitrary number of defect regions whose arrangement and weighting is arbitrarily selectable.

Abstract translation: 在通过粒子照射（P）调整半导体部件（1）中的载流子寿命的工序中，在半导体部件（1）中产生至少两个缺陷区域（10,11,12,13）。 在该过程中，由具有至少大致相同的初始能量的粒子（a，b，c，d）组成的粒子束（P）在到达半导体部件（2）之前由至少一个装置（2）起作用 1），使得颗粒（a，b，c，d）随后具有不同的能量值，至少两个能量值组是可区分的。 因此，通过单粒子照射操作可以产生任意数量的排列和加权可任意选择的缺陷区域。